Search results for "Rom"

showing 10 items of 37506 documents

Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceCondensed matter physicsNon-blocking I/OYttrium iron garnet02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural scienceschemistry.chemical_compoundReflection (mathematics)chemistry0103 physical sciencesAntiferromagnetism0210 nano-technologySpin (physics)Applied Physics Letters
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2019

We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic CoFeB layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially flat for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of up to two in field.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsField (physics)business.industryTerahertz radiationPhysics::Optics02 engineering and technologyDielectricPhoton energy021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials ScienceWavelengthFerromagnetism0103 physical sciencesOptoelectronics0210 nano-technologybusinessExcitationApplied Physics Letters
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Quartz resonators for penning traps toward mass spectrometry on the heaviest ions

2020

We report on cyclotron frequency measurements on trapped 206,207Pb+ ions by means of the non-destructive Fourier-transform ion-cyclotron-resonance technique at room temperature. In a proof-of-principle experiment using a quartz crystal instead of a coil as a resonator, we have alternately carried out cyclotron frequency measurements for 206Pb+ and 207Pb+ with the sideband coupling method to obtain 21 cyclotron-frequency ratios with a statistical uncertainty of 6 × 10−7. The mean frequency ratio R¯ deviates by about 2σ from the value deduced from the masses reported in the latest Atomic Mass Evaluation. We anticipate that this shift is due to the ion–ion interaction between the simultaneousl…

010302 applied physicsMaterials scienceSidebandCyclotronMass spectrometry01 natural sciences7. Clean energyAtomic mass010305 fluids & plasmaslaw.inventionIonCrystalResonatorPhysics::Plasma Physicslaw0103 physical sciencesAtomic physicsddc:620InstrumentationQuartz
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Fluence effect on ion-implanted As diffusion in relaxed SiGe

2005

A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

010302 applied physicsMaterials scienceSiliconAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesFluenceIonSecondary ion mass spectrometrychemistry0103 physical sciencesRadiation damageDiffusion (business)0210 nano-technologyArsenicEurophysics Letters
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HCl gas gettering of low-cost silicon

2013

HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…

010302 applied physicsMaterials scienceSiliconEtching rateInorganic chemistrychemistry.chemical_element02 engineering and technologySurfaces and InterfacesActivation energy021001 nanoscience & nanotechnologyCondensed Matter Physics7. Clean energy01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryTransition metalGetterEtching (microfabrication)0103 physical sciencesMaterials ChemistryWaferElectrical and Electronic Engineering0210 nano-technologyInductively coupled plasma mass spectrometryphysica status solidi (a)
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XUV diagnostic to monitor H-like emission from B, C, N, and O for the W7-X stellarator

2019

The “C/O Monitor” system for the Wendelstein 7-X (W7-X) stellarator is a dedicated spectrometer with high throughput and high time resolution (order of 1 ms) for fast monitoring of content of low-Z impurities in the plasma. The observed spectral lines are fixed to Lyman-α lines of H-like atoms of carbon (3.4 nm), oxygen (1.9 nm), nitrogen (2.5 nm), and boron (4.9 nm). The quality of the wall condition will be monitored by the measurements of oxygen being released from the walls during the experiments. The strong presence of carbon is an indication for enhanced plasma-wall interaction or overload of plasma facing components. The presence of nitrogen (together with oxygen) may indicate a poss…

010302 applied physicsMaterials scienceSpectrometerAnalytical chemistrychemistry.chemical_element01 natural sciencesNitrogenOxygenSpectral line010305 fluids & plasmaslaw.inventionchemistryImpuritylaw0103 physical sciencesPlasma diagnosticsBoronInstrumentationStellarator
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Choice of the detectors for light impurities plasma studies at W7-X using ‘CO Monitor’ system

2019

Abstarct The ‘CO Monitor’ is a new spectrometer system dedicated for the continuous measurements of line intensities of carbon, oxygen, boron and nitrogen at the fusion plasma experiment Wendelstein 7-X (W7-X). Its main purpose is to deliver constant information about indicated elements with high time resolution (better than 1 ms), but low spatial resolution since the line shapes are not going to be investigated. The system consists of four independent channels, each equipped with dispersive element dedicated for measurement of selected line of interest. In order to perform the highest efficiency of the ‘CO Monitor’ system, it is essential to choose the proper detector type for this task. T…

010302 applied physicsMaterials scienceSpectrometerbusiness.industryMechanical EngineeringDetectorPhase (waves)PlasmaElectronXUVDetectorsWendelstein 7-XStellarator01 natural sciencesLine (electrical engineering)010305 fluids & plasmasOpticsNuclear Energy and Engineering0103 physical sciencesGeneral Materials SciencebusinessSensitivity (electronics)Image resolutionCivil and Structural EngineeringFusion Engineering and Design
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Guiding and splitting Lamb waves in coupled-resonator elastic waveguides

2018

Abstract We investigate experimentally Lamb wave propagation in coupled-resonator elastic waveguides (CREWs) formed by a chain of cavities in a two-dimensional phononic crystal slab with cross holes. Wide complete bandgaps, extending from 53 to 88 kHz, are first measured in a finite phononic crystal slab sample. A straight waveguide and a wave splitting circuit with 90° bends are then designed, fabricated and measured. Elastic Lamb waves are excited by a piezoelectric patch attached to one side of the phononic slab and detected using a scanning vibrometer. Strongly confined guiding and splitting at waveguide junctions are clearly observed for several guided waves. Numerical simulations are …

010302 applied physicsMaterials sciencebusiness.industryPhysics::Optics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPiezoelectricitylaw.inventionCrystalResonatorLamb wavesOpticslaw0103 physical sciencesDispersion (optics)Ceramics and CompositesSlab0210 nano-technologybusinessLaser Doppler vibrometerWaveguideCivil and Structural EngineeringComposite Structures
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Power efficiency improvements with the radio frequency H− ion source

2016

CW 13.56 MHz radio frequency-driven H(-) ion source is under development at the University of Jyväskylä for replacing an existing filament-driven ion source at the MCC30/15 cyclotron. Previously, production of 1 mA H(-) beam, which is the target intensity of the ion source, has been reported at 3 kW of RF power. The original ion source front plate with an adjustable electromagnet based filter field has been replaced with a new front plate with permanent magnet filter field. The new structure is more open and enables a higher flux of ro-vibrationally excited molecules towards the plasma electrode and provides a better control of the potential near the extraction due to a stronger separation …

010302 applied physicsMaterials scienceta114ta213Electromagnetbusiness.industryRF power amplifierCyclotronPlasma01 natural sciencesIon sourcelaw.inventionion sourceslawMagnet0103 physical sciencesOptoelectronicsRadio frequencypower efficiency010306 general physicsbusinessInstrumentationElectrical efficiencyReview of Scientific Instruments
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Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry

2000

A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…

010302 applied physicsMicroprobeMaterials scienceIon beamAnnealing (metallurgy)Analytical chemistryGeneral Physics and AstronomyHeterojunction02 engineering and technologyCondensed Matter::Mesoscopic Systems and Quantum Hall Effect021001 nanoscience & nanotechnologyRutherford backscattering spectrometry01 natural sciencesSpectral lineCondensed Matter::Materials Science0103 physical sciencesSurface roughness0210 nano-technologySpectroscopyJournal of Applied Physics
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