Search results for "SAPPHIRE"

showing 4 items of 114 documents

Laser developments and high resolution resonance ionization spectroscopy of actinide elements

2014

laseritresonance ionizationhyperfine structurelaserlaitteetteoreettinen fysiikkaIGISOLsapphire [Ti]laser
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Corundum Anorthosites-Kyshtymites from the South Urals, Russia: A Combined Mineralogical, Geochemical, and U-Pb Zircon Geochronological Study

2019

Kyshtymites are the unique corundum-blue sapphire-bearing variety of anorthosites of debatable geological origin found in the Ilmenogorsky-Vishnevogorsky complex (IVC) in the South Urals, Russia. Their mineral association includes corundum-sapphire, plagioclase (An61&ndash

lcsh:QE351-399.2010504 meteorology & atmospheric sciencesGeochemistryMetamorphismengineering.material010502 geochemistry & geophysics01 natural sciencesIlmenogorsky-Vishnevogorsky complexAnorthositeUltramafic rockPlagioclasein situ LA-ICP-MS U-Pb zircon datingMetasomatismblue sapphire0105 earth and related environmental sciencessapphire geochemistrylcsh:MineralogyGeologyGeotechnical Engineering and Engineering GeologykyshtymitesanorthositesCarbonatiteengineeringProtolithGeologyZirconMinerals
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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

2020

The suitability of Ti as a band gap modifier for &alpha

solar-blind detectionlaajakaistaiset puolijohteetalloyingBand gaplcsh:Mechanical engineering and machineryAnalytical chemistryCorundum02 engineering and technologyengineering.material7. Clean energy01 natural sciencesArticlegallium oxideCrystallinityAtomic layer depositionpuolijohteet0103 physical scienceslcsh:TJ1-1570Electrical and Electronic EngineeringThin filmQCgallium010302 applied physicsCondensed Matter - Materials Sciencewide band gap semiconductorsMechanical EngineeringWide-bandgap semiconductorPhysics - Applied Physicsatomikerroskasvatus021001 nanoscience & nanotechnologybandgapAmorphous solidthin filmstitaaniControl and Systems Engineeringatomic layer depositiongalliumoksidiengineeringSapphireohutkalvotddc:6200210 nano-technology
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Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

2003

A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

symbols.namesakechemistrylawConfocalAnalytical chemistrysymbolsSapphirechemistry.chemical_elementSTRIPSGalliumRaman spectroscopyNitrogenlaw.inventionphysica status solidi (c)
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