Search results for "SCA"
showing 10 items of 23299 documents
Interface evolution during magnetic pulse welding under extremely high strain rate collision: mechanisms, thermomechanical kinetics and consequences
2020
Abstract Magnetic pulse welding enables to produce perplexing interfacial morphologies due to the complex material response during the high strain rate collision. Thus, a thermomechanical model is used in this study to investigate the formation mechanism of the wake, vortex, swirling and mesoscale cavities with the increase of the impact intensity at the interface. The formation of these interfacial features are difficult to characterize by insitu methods, thus the origin of phenomena still remain a subject of open discussion. Our studies identify the governing mechanisms and the associated thermomechanical kinetics, which are responsible for the formation mechanism of interfacial features.…
Development of hard x-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states
2016
Abstract A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the…
Deposition of binder-free oxygen-vacancies NiCo2O4 based films with hollow microspheres via solution precursor thermal spray for supercapacitors
2019
Abstract Hollow micro-/nanostructures and oxygen vacancies are highly desirable for supercapacitors due to high active surface area and outstanding electrochemical properties. In order to benefiting from the both effect, binder-free oxygen-vacancies NiCo2O4 based films with hollow microspheres were pioneering directly deposited via one kind thermal spray technology, named solution precursor thermal spray (SPTS) process. To our best knowledge, the rapid one-step SPTS route was firstly employed to synthesize and deposit NiCo2O4 films for supercapacitor applications. The CV data clearly demonstrated that the specific capacitances of more oxygen-deficient NiCo2O4 electrodes with hollow microsph…
Color centers in diamond as novel probes of superconductivity
2018
Magnetic imaging using color centers in diamond through both scanning and wide-field methods offers a combination of unique capabilities for studying superconductivity, for example, enabling accurate vector magnetometry at high temperature or high pressure, with spatial resolution down to the nanometer scale. The paper briefly reviews various experimental modalities in this rapidly developing nascent field and provides an outlook towards possible future directions.
Simplified feedback control system for scanning tunneling microscopy
2021
A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here we discuss another approach, using a computer and data acquisition thr…
Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation
2009
Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
2011
Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…
Run-time scalable NoC for FPGA based virtualized IPs
2017
The integration of virtualized FPGA-based hardware accelerators in a cloud computing is progressing from time to time. As the FPGA has limited resources, the dynamic partial reconfiguration capability of the FPGA is considered to share resources among different virtualized IPs during runtime. On the other hand, the NoC is a promising solution for communication among virtualized FPGA-based IPs. However, not all the virtualized regions of the FPGA will be active all the time. When there is no demand for virtualized IPs, the virtualized regions are loaded with blank bitstreams to save power. However, keeping active the idle components of the NoC connecting with the idle virtualized regions is …
Stealth dicing with ultrafast Bessel beams with engineered transverse profiles
2017
International audience; We investigate high-speed glass cleaving with ultrafast laser beams with engineered transverse intensity profile. We achieve accuracy of ~ 1 µm at 25 mm/s and drastically enhance cleavability compared to standard Bessel beams.
The role of radio frequency scattering in high-energy electron losses from minimum-B ECR ion source
2021
Abstract The measurement of the axially lost electron energy distribution escaping from a minimum-B electron cyclotron resonance ion source in the range of 4–800 keV is reported. The experiments have revealed the existence of a hump at 150–300 keV energy, containing up to 15% of the lost electrons and carrying up to 30% of the measured energy losses. The mean energy of the hump is independent of the microwave power, frequency and neutral gas pressure but increases with the magnetic field strength, most importantly with the value of the minimum-B field. Experiments in pulsed operation mode have indicated the presence of the hump only when microwave power is applied, confirming that the origi…