Search results for "SIO2"
showing 10 items of 43 documents
Effect of Hydration Procedure of Fumed Silica Precursor on the Formation of Luminescent Carbon Centers in SiO 2 :C Nanocomposites
2019
The effect of hydration procedure of fumed silica precursor on photoluminescent properties of carbonized silica (SiO2:C) nanocomposite after chemo/thermal treatments is studied. Main structural effect is the formation of chemical bonding of phenyl groups to silica surface via multiple CSiO bonding bridges. Synthesized samples demonstrate very broad photoluminescence (PL) bands in near ultraviolet and visible ranges with maximum intensity dependent on temperature of thermal annealing. Two main trends in luminescence properties are: 1) hydration-induced blue shift of PL in comparison with PL of unhydrated series; 2) red shift of PL bands with increasing synthesis temperature regardless hydr…
The role of impurities in the irradiation induced densification of amorphous SiO(2).
2011
In a recent work (Buscarino et al 2009 Phys. Rev. B 80 094202), by studying the properties of the (29)Si hyperfine structure of the E'(γ) point defect, we have proposed a model able to describe quantitatively the densification process taking place upon electron irradiation in amorphous SiO(2) (a-SiO(2)). In particular, we have shown that it proceeds heterogeneously, through the nucleation of confined densified regions statistically dispersed into the whole volume of the material. In the present experimental investigation, by using a similar approach on a wider set of materials, we explore how this process is influenced by impurities, such as OH and Cl, typically involved in relevant concent…
Insight into the defect-molecule interaction through the molecular-like photoluminescence of SiO2 nanoparticles
2016
Luminescence properties due to surface defects in SiO2 are the main keystone with particles that have nanoscale dimensions, thus motivating their investigation for many emission related applications in the last few decades. A critical issue is the role played by the atmosphere that, by quenching mechanisms, weakens both the efficiency and stability of the defects. A deep knowledge of these factors is mandatory in order to properly limit any detrimental effects and, ultimately, to offer new advantageous possibilities for their exploitation. Up to now, quenching effects have been interpreted as general defect conversion processes due to the difficulty in disentangling the emission kinetics by…
Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing
2002
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…
Structural organization of silanol and silicon hydride groups in the amorphous silicon dioxide network
2011
We present a study on the effects of an isothermal annealing treatment on a-SiO 2 having a significant content of silanol hydride groups (Si-H). We examined the properties of the IR absorption bands of silanol (Si-OH) and silicon hydride groups as a function of the duration of the thermal treatment. We showed that the Si-OH and Si-H groups contents decrease in a linearly correlated way. The annealing dynamics suggest that the two species are close to each other in the amorphous network. We showed that the profile of the silanol groups absorption band is the same as that observed in other commercial a-SiO 2 materials, irrespectively of the concomitant presence of nearby Si-H groups, and, mor…
Structural Modification Processes in Bulk and Nano-sized Amorphous SiO2 Systems.
2011
Ultraviolet-induced paramagnetic centers and absorption changes in singlemode Ge-doped optical fibers
2009
We investigated the laser-energy-density dependence of absorption changes and paramagnetic centers induced by a cw Ar+ laser operating at 5.1 eV, in both unloaded and H-2-loaded single mode Ge-doped optical fibers. The induced absorption is measured in the blue and near ultraviolet spectral range by using the 3.1 eV photoluminescence, ascribed to Ge lone pair center (GLPC), as an in situ probe source. We find that the Ge (1) center (GeO4-) is induced upon UV exposure by electron trapping on GeO4 precursors, where the free electrons are most likely produced by ionization of GLPC. Ge (1) is responsible of optical transmission loss of the fiber in the investigated range. Hydrogen loading stron…
Diffusive equilibrium properties of O2 in amorphous SiO2 nanoparticles probed via dependence of concentration on size and pressure
2014
An experimental study on the diffusive equilibrium value of interstitial O2 in silica nanoparticles was carried out on samples with average particles diameter 40, 14, and 7 nm. The investigation was performed by measuring the concentration of interstitial O2 by Raman and photoluminescence techniques. The dependence of diffusive equilibrium concentration on pressure and temperature was investigated in the pressure range from 0.2 to 76 bar and in the temperature range from 98 to 244 °C. The equilibrium concentration of interstitial O2 follows Henry’s law at pressures below 13 bar whereas a departure from this model is observed at higher pressures. In particular, O2 concentration saturates abo…
Luminescence Efficiency of Si/SiO 2 Nanoparticles Produced by Laser Ablation
2019
Photoluminescence properties of Si(core)/SiO 2 (shell) nanoparticles produced by pulsed laser ablation in aqueous solution are investigated with the purpose to highlight the microscopic processes that govern the emission brightness and stability. Time resolved spectra evidence that these systems emit a µs decaying band centered around 1.95 eV, that is associated with the radiative recombination of quantum-confined excitons generated in the Si nanocrystalline core. Both the quantum efficiency and the stability of this emission are strongly dependent on the pH level of the solution, that is changed after the laser ablation is performed. They enhance in acid environment because of the H + pass…
Influence of fluorine on the fiber resistance studied through the nonbridging oxygen hole center related luminescence
2013
The distribution of Non-Bridging Oxygen Hole Centers (NBOHCs) in fluorine doped optical fibers was investigated by confocal microluminescence spectroscopy, monitoring their characteristic 1.9 eV luminescence band. The results show that these defects are generated by the fiber drawing and their concentration further increases after c irradiation. The NBOHC concentration profile along the fiber provides evidence for an exponential decay with the fluorine content. This finding agrees with the role of fluorine in the fiber resistance and is discussed, from the microscopic point of view, by looking at the conversion mechanisms from strained bonds acting as precursors.