Search results for "Sapphire"
showing 10 items of 114 documents
Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
2013
We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 mu m-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum(FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of (DXA)-X-0 emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results p…
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…
Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods
1992
The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.
Continuous-wave backward frequency doubling in periodically poled lithium niobate
2010
We report on backward second-harmonic-generation in bulk periodically poled congruent lithium niobate with a 3.2 microns period. A tunable continuous-wave Ti:sapphire laser allowed us exciting two resonant quasi-phase-matching orders in the backward configuration. The resonances were also resolved by temperature tuning and interpolated with standard theory to extract relevant information on the sample.
Flashlamp-pumped Ti:Sapphire laser: Influence of the rod figure of merit and Ti3+ concentration
1994
A flashlamp-pumped Ti:Sapphire laser is tested with rods of various Figures of Merit (FOM from 100 to 800) and Ti3+ concentrations (0.1 and 0.15% by weight) and we measured the laser energy dependence as a function of these parameters. Output energies above 2 J are obtained without dye converter, leading to a 1.8% overall efficiency and a 2.2% slope efficiency. The effects of pump pulse duration by variation of the discharge capacitance are also monitored.
Continuously tunable diamond Raman laser for resonance laser ionization.
2019
We demonstrate a highly efficient, tunable, ∼5 GHz line- width diamond Raman laser operating at 479 nm. The diamond laser was pumped by a wavelength-tunable intra- cavity frequency-doubled titanium sapphire (Ti:Sapphire) laser operating at around 450 nm, at a repetition rate of 10 kHz with a pulse duration of 50 ns. The Raman reso- nator produced a continuously tunable output with high stability, high conversion efficiency (28%), and beam quality (M$^{2}$ <1.2). We also demonstrate that the linewidth and tunability of the pump laser is directly transferred to the Stokes output. Our results show that diamond Raman lasers offer great potential for spectroscopic applications, such as resonance…
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
2012
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
Surfactant effect of Sb on the growth of Ag films on a sapphire substrate
1996
It is shown that a very thin layer of Sb may be used as a surfactant to modify the growth of silver films on an insulating substrate. The conduction (percolation) current flowing through a dispersed Ag film appears at a significantly smaller thickness due to the change in the growth mode of silver islands. Some practical applications are indicated.
Development of two-color resonance ionization scheme for Th using an automated wide-range tunable Ti:sapphire laser system
2018
Two-color resonance ionization schemes of Th were investigated by an automated wide-range tunable, grating-assisted Ti:Sa laser system with intracavity SHG option. A two-color ionization scheme via autoionizing state (1st step: 372.049 nm and 2nd step: 401.031 nm) was developed and its relative efficiency was lower by factor of three compared to a known three color scheme. peerReviewed