Search results for "Selenide"

showing 10 items of 100 documents

Bis[3-methyl-5-(pyridin-2-yl)-1H-pyrazol-4-yl] selenide methanol hemisolvate

2014

The asymmetric unit of the title compound, C18H16N6Se·0.5CH3OH, contains two independent molecules of bis[3-methyl-5-(pyridin-2-yl)-1H-pyrazol-4-yl] selenide with similar C—Se—C bond angles [99.30 (14) and 98.26 (13)°], and a methanol molecule of solvation. In one molecule, the dihedral angles between pyrazole and neighbouring pyridine rings are 18.3 (2) and 15.8 (2)°, and the corresponding angles in the other molecule are 13.5 (2) and 8.3 (2)°. In the crystal, the selenide and solvent molecules are linked by classical O—H...N and N—H...N hydrogen bonds, as well as by weak C—H...O and C—H...π interactions, forming a three-dimensional supramolecular architecture.

Crystallography010405 organic chemistryHydrogen bondSolvationGeneral ChemistryPyrazoleDihedral angle010402 general chemistryCondensed Matter PhysicsBioinformaticsOrganic Papers01 natural sciences3. Good health0104 chemical scienceschemistry.chemical_compoundCrystallographyMolecular geometrychemistryQD901-999SelenidePyridineMoleculeGeneral Materials ScienceActa Crystallographica Section E Structure Reports Online
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Discovery of new boron-rich chalcogenides: Orthorhombic B6X (X=S, Se)

2020

The authors thank T. Chauveau (LSPM) for help with Rietveld analysis, A. Jamali (LRCS) for assistance with SEM measurements, and Drs. Y. Tange (SPring-8) and N. Guignot (SOLEIL) for help in synchrotron experiments that were carried out during beamtimes allocated to proposals 2017A1047 & 2018A1121 at SPring-8 and proposal 20170092 at SOLEIL. Ab initio calculations have been performed using Rurik and Arkuda supercomputers. This work was financially supported by the European Union’s Horizon 2020 Research and Innovation Programme under Flintstone2020 project (grant agreement No. 689279). Z.W. thanks the National Science Foundation of China (grant No. 11604159). A.R.O. thanks the Russian Ministr…

DiffractionMaterials sciencePhononlcsh:MedicineFOS: Physical sciences02 engineering and technology[CHIM.INOR]Chemical Sciences/Inorganic chemistry01 natural scienceschemistry.chemical_compoundsymbols.namesakeCondensed Matter::Materials ScienceAb initio quantum chemistry methodsSelenideCondensed Matter::Superconductivity0103 physical sciences[CHIM.CRIS]Chemical Sciences/Cristallographylcsh:Science010302 applied physicsCondensed Matter - Materials ScienceMultidisciplinaryRietveld refinementlcsh:RMaterials Science (cond-mat.mtrl-sci):NATURAL SCIENCES::Physics [Research Subject Categories][CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyAmorphizationCrystal structure predictionBoron CarbideCrystallographychemistrysymbolslcsh:QOrthorhombic crystal systemNeutron Absorber0210 nano-technologyRaman spectroscopyScientific Reports
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Experimental and Theoretical Studies on alfa-In2Se3 at High Pressure

2018

[EN] alpha(R)-In2Se3 has been experimentally and theoretically studied under compression at room temperature by means of X-ray diffraction and Raman scattering measurements as well as by ab initio total-energy and lattice-dynamics calculations. Our study has confirmed the alpha (R3m) -> beta' (C2/m) ? beta (R (3) over barm) sequence of pressure-induced phase transitions and has allowed us to understand the mechanism of the monoclinic C2/m to rhombohedral R (3) over barm phase transition. The monoclinic C2/m phase enhances its symmetry gradually until a complete transformation to the rhombohedral R (3) over barm structure is attained above 10-12 GPa. The second-order character of this transi…

DiffractionPhase transitionHigh-pressureAb initio02 engineering and technology01 natural sciencesInorganic ChemistryCondensed Matter::Materials Sciencesymbols.namesake0103 physical sciencesPhysical and Theoretical Chemistry010306 general physicsRamanPhase transitionIndium selenideChemistry021001 nanoscience & nanotechnologySymmetry (physics)X-ray diffractionCrystallographyFISICA APLICADAX-ray crystallographyAb initiosymbols0210 nano-technologyRaman spectroscopyRaman scatteringMonoclinic crystal system
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Structural and vibrational behavior of cubic Cu1.80(3)Se cuprous selenide, berzelianite, under compression

2020

[EN] We have performed an experimental study of the crystal structure and lattice dynamics of cubic Cu1.80(3)Se at ambient temperature and high pressures. Two reversible phase transitions were found at 2.9 and 8.7 GPa. The indexation of the angle-dispersive synchrotron x-ray diffraction patterns suggests a large orthorhombic cell and a monoclinic cell for the high-pressure phases. Raman measurements provide additional information on the local structure. The compressibility of the three ambient temperature phases has been determined and compared to that of other sulphides and selenides.

DiffractionPhase transitionMaterials scienceHigh-pressureBerzelianiteAnalytical chemistry02 engineering and technologyCrystal structure010402 general chemistry01 natural scienceslaw.inventionchemistry.chemical_compoundsymbols.namesakelawSelenideMaterials ChemistryCompressibilityMechanical EngineeringCrystal structureMetals and Alloys021001 nanoscience & nanotechnologySynchrotron0104 chemical scienceschemistryMechanics of MaterialsPhase transitionsFISICA APLICADAsymbolsOrthorhombic crystal system0210 nano-technologyRaman spectroscopyMonoclinic crystal systemCopper selenide
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Precursor effects of the Rhombohedral-to-Cubic Phase Transition in Indium Selenide

2002

We report on the observation of precursor effects of the rhombohedral-to-cubic phase transition in Indium Selenide (InSe) with several experimental techniques. The pressure at which these precursor defects are first observed depends on the sensitivity of the experimental technique. In transport measurements, which are very sensitive to low defect concentrations, precursor effects are observed 5 to 6 GPa below the phase transition pressure whereas in X-ray diffraction measurements precursor effects are only observed 2 GPa below the phase transition pressure. We report optical absorption measurements, in which the precursor effects are shown by the growth and propagation of dark linear defect…

Diffractionchemistry.chemical_classificationPhase transitionCondensed matter physicsBase (chemistry)digestive oral and skin physiologychemistry.chemical_elementTrigonal crystal systemCondensed Matter PhysicsStress fieldchemistry.chemical_compoundCrystallographychemistrySelenideAbsorption (chemistry)IndiumHigh Pressure Research
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Bond stretching and redox behavior in coinage metal complexes of the dichalcogenide dianions [(SPh2P)2CEEC(PPh2S)2]2- (E=S, Se): diradical character …

2011

The metathetical reactions of a) [Li(tmeda)](2)[(S)C(PPh(2)S)(2)] (Li(2)·3c) with CuCl(2) and b) [Li(tmeda)](2)[(SPh(2)P)(2)CSSC(PPh(2)S)(2)] (Li(2)·4c) with two equivalents of CuCl both afford the binuclear Cu(I) complex {Cu(2)[(SPh(2)P)(2)CSSC(PPh(2)S)(2)]} (5c). The elongated (C)S-S(C) bond (ca. 2.54 and 2.72 A) of the dianionic ligand observed in the solid-state structure of 5c indicate the presence of diradical character as supported by theoretical analyses. The treatment of [Li(tmeda)](2)[(SPh(2)P)(2)CSeSeC(PPh(2)S)(2)] (Li(2)·4b) and Li(2)·4c with AgOSO(2)CF(3) produce the analogous Ag(I) derivatives, {Ag(2)[(SPh(2)P)(2)CEEC(PPh(2)S)(2)]} (6b, E=Se; 6c, E=S), respectively. The disele…

DiradicalChemistryStereochemistryLigandOrganic ChemistryCoinage metalsGeneral ChemistryNuclear magnetic resonance spectroscopyMetathesisCatalysisMetalDiselenideCrystallographyvisual_artvisual_art.visual_art_mediumta116IsomerizationChemistry (Weinheim an der Bergstrasse, Germany)
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Tin-related double acceptors in gallium selenide single crystals

1998

Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…

Electron mobilityHole MobilityAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementMineralogyDeep LevelsCondensed Matter::Materials Sciencechemistry.chemical_compound:FÍSICA [UNESCO]Condensed Matter::SuperconductivitySelenideNuclear ExperimentConduction BandsGallium Compounds ; III-VI Semiconductors ; Tin ; Impurity States ; Deep Levels ; Electrical Resistivity ; Hall Effect ; Hole Mobility ; Conduction BandsImpurity StatesElectrical ResistivityHall EffectIII-VI SemiconductorsPhonon scatteringCarrier scatteringDopingUNESCO::FÍSICAAcceptorchemistryTinGallium CompoundsTinIndiumJournal of Applied Physics
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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

1993

A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…

Electron mobilityInfrared SpectraAnnealing (metallurgy)Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementAnnealingchemistry.chemical_compound:FÍSICA [UNESCO]Hall effectImpurityElectrical resistivity and conductivityTin AdditionsSelenideDoped MaterialsIndium SelenidesHall EffectCondensed matter physicsTemperature DependenceDopingUNESCO::FÍSICAElectric ConductivityIndium Selenides ; Tin Additions ; Impurities ; Annealing ; Electric Conductivity ; Infrared Spectra ; Hall Effect ; Deep Energy Levels ; Temperature Dependence ; Doped MaterialsDeep Energy LevelschemistryIndiumImpuritiesJournal of Applied Physics
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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3under high p…

2012

This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at hi…

Electron mobilityMaterials scienceCondensed matter physicsbusiness.industryElectronic structureElectronCondensed Matter PhysicsDiamond anvil cellElectronic Optical and Magnetic Materialschemistry.chemical_compoundSemiconductorchemistryTopological insulatorBismuth selenidebusinessAmbient pressurePhysical Review B
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Electron scattering mechanisms inn-type indium selenide

1984

Electron scattering mechanisms in $n$-type indium selenide are investigated by means of the temperature dependence (4-500 K) of Hall mobility and the magnetic field dependence of Hall and magnetoresistance coefficients. The Schmid model for homopolar optical-phonon scattering can explain the temperature dependence of electron mobility above 40 K. The electron-phonon coupling constant is determined, ${g}^{2}=0.054$. The optical phonon involved in the process is identified as the ${A}_{1}^{\ensuremath{'}}$ phonon with energy 14.3 meV. The magnetic field dependence of Hall and magnetoresistance coefficients is discussed in terms of the Jones-Zener expansion.

Electron mobilityMaterials scienceMagnetoresistanceCondensed matter physicsPhononScatteringchemistry.chemical_elementCondensed Matter::Mesoscopic Systems and Quantum Hall EffectMagnetic fieldCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistrySelenideCondensed Matter::Strongly Correlated ElectronsAtomic physicsElectron scatteringIndiumPhysical Review B
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