Search results for "Semiconductor detector"
showing 10 items of 108 documents
Results of the 1999 H8 beam tests of ATLAS-SCT prototypes
2001
Abstract During the August–September 1999 test beam in H8 at CERN three half-modules, equipped with different types of fast binary Front End electronics, have been tested. The results indicate that all three SCT electronics candidates satisfy ATLAS efficiency and noise occupancy requirements. In addition, a study on the effect of detector bias voltage on efficiency (ballistic deficit) is reported.
A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics
2000
Abstract Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×10 14 p cm −2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.
Silicon microstrip detectors for the ATLAS SCT
2002
Abstract The ATLAS Semiconductor Tracker at the Large Hadron Collider (LHC) will incorporate ∼20,000 individual silicon microstrip sensors representing ∼60 m 2 of silicon. Production and delivery of the sensors is already underway and scheduled for completion by late 2002. The sensors have been optimised for operation in the harsh radiation environment of the LHC, and subjected to an extensive qualification program in which their pre- and post-irradiation characteristics have been evaluated. The sensor design features are reviewed, together with their electrical characteristics and the Quality Control procedures adopted by ATLAS during production.
Alignment of the NOMAD-STAR detector
2000
Abstract This note describes the alignment of the NOMAD-STAR detector. This is the B 4 C-silicon target installed in the NOMAD spectrometer in 1997. NOMAD-STAR is composed of modules of 12 silicon detectors each giving a total length of 72 cm. Ten of these modules (called ladders) are assembled to form a layer. There are five layers interleaved with passive boron carbide plates. The total surface of silicon is 1.14 m 2 . Energetic muons from the flat-top of the CERN SPS cycle provide the necessary information to perform a very precise software alignment. This alignment is needed to ensure that the impact parameter measurement needed for the identification of taus in a detector like NOMAD-ST…
Kalman filter tracking and vertexing in a silicon detector for neutrino physics
2002
Abstract This article describes the application of Kalman filter techniques for the tracking and vertexing of particles inside the NOMAD-STAR detector, a silicon vertex detector installed in NOMAD, one of the neutrino oscillation experiments at the CERN-SPS. The use of the Kalman filter simplifies computationally the tracking and vertex procedure for NOMAD-STAR. The alignment of NOMAD-STAR is shown as an example of the application of the Kalman filter for tracking purposes. The accuracy of the method is such that one obtains alignment residuals between 9 and 12 μm . Furthermore, a preliminary measure of the impact parameter (with an RMS ∼36 μm ) illustrates the vertexing capabilities of thi…
Behavior of a trapezoid-based data acquisition system up to 100 kHz and beyond
2016
In this work, we investigated the ability of a high-purity germanium detector connected to a trapezoid-filter-based data acquisition system to reliably record signals in spite of high sample activities. By activating multiple Na$_{2}$CO$_{3}$ samples with different Na content, we were able to deduce efficiency, resolution and dead time of the system used as a function of the sample activity. Based on the results, we were able to find a setting which allows measurements of event rates up to 35~kHz per readout channel with an energy resolution of 0.3\% at the 2754 keV $^{24}$Na line.
High Voltage Monolithic Active Pixel Sensors
2018
Ever higher demands on resolution and rate capability drive the development of particle tracking detectors. Especially at low momenta, multiple Coulomb scattering in the material of the detector is also strongly affecting the resolution of momentum measurements. While gas-based detectors such as drift chambers and time projection chambers can be built with very small amounts of material, their rate capability is limited by ageing and space charge effects. Hybrid semiconductor detectors on the other hand combine a depleted (silicon) sensor with a custom amplifier and readout chip. Pixelated devices especially can operate efficiently in very harsh rate and radiation environments such as the i…
Accelerated radioactive beams from REX-ISOLDE
2003
In 2001 the linear accelerator of the Radioactive beam EXperiment (REX-ISOLDE) delivered for the first time accelerated radioactive ion beams, at a beam energy of 2 MeV/u. REX-ISOLDE uses the method of charge-state breeding, in order to enhance the charge state of the ions before injection into the LINAC. Radioactive singly-charged ions from the on-line mass separator ISOLDE are first accumulated in a Penning trap, then charge bred to an A/q < 4.5 in an electron beam ion source (EBIS) and finally accelerated in a LINAC from 5 keV/u to energies between 0.8 and 2.2 MeV/u. Dedicated measurements with REXTRAP, the transfer line and the EBIS have been carried out in conjunction with the first co…
Optical investigations of TlBr detector crystals
2004
Shift of fundamental absorption edge, the position of main luminescence bands, the luminescence decay and transient absorption spectra in three TlBr crystals were studied. The γ-quanta detector made from TlBr crystals with similar transient absorption and luminescence parameters shows similar detector properties. The iodine impurity in TlBr was detected by optical methods. The role of impurities and crystal defects in γ-quanta detectors manufactured is discussed.
Laser tests of silicon detectors
2007
This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented.