Search results for "Semiconductor"
showing 10 items of 974 documents
1.65-μm Er:Yb:YAG diode-pumped laser delivering 80-mJ pulse energy
2005
We demonstrate efficient lasing of bulk diode-pumped Er 31 :Yb 31 :YAG at 1.645 mm. The material is transversely pumped using three quasi-cw 960-nm laser diode arrays in a simple arrangement. In the free-running mode of operation, an output pulse energy of 79 mJ is obtained at 4.7 J of incident optical pump energy. The lasing threshold lies in the range 1.0 to 1.9 J in long-pulse operation, depending on pumping conditions, and optical slope efficiencies of 2.2% to 3.4% were measured with respect to the incident pump energy. Furthermore, initial Q-switching experiments with a Co:MALO saturable absorber yielded pulses of 1.7-mJ energy and 340-ns FWHM duration. As the reported laser setup also…
Heat transfer in semi-transparent materials during laser interaction
2004
Abstract A model of energy exchange, based on the finite element method is specially developed to determine the thermal field for semi-transparent polymers irradiated by laser. Our model, which uses the finite element method, allows to define the laser and specific structure characteristics in terms of density of power, speed and shape of the spotlight, material coefficient absorption, etc. The model has been experimentally validated by measuring the thermal response induced by the laser source. The experimental part of the study has been performed using a semiconductor laser diode source and an infrared thermography camera.
Germanium microparticles as optically induced oscillators in optical tweezers
2019
Oscillatory dynamics is a key tool in optical tweezers applications. It is usually implemented by mechanical interventions that cannot be optically controlled. In this work we show that Germanium semiconductor beads behave as optically induced oscillators when subjected to a highly focused laser beam. Such unusual motion is due to the competition between the usual optical forces [1-3] and the radiometric force related to thermal effects, which pushes the beads from the focal region [4]. We characterize the behavior of the Germanium beads in detail and propose a model accounting for the related forces, in good agreement with the experimental data. The well defined direction of oscillations c…
Hybrid organic-inorganic light-emitting diodes.
2011
The demonstration of colour tunability and high efficiency has brought organic light-emitting diodes (OLEDs) into the displays and lighting market. However, high production costs due to expensive deposition techniques and the use of reactive materials still limit their market entry, highlighting the need for novel concepts. This has driven the research towards the integration of both organic and inorganic materials into devices that benefit from their respective peculiar properties. The most representative example of this tendency is the application of metal oxides in organic optoelectronics. Metal oxides combine properties such as high transparency, good electrical conductivities, tuneable…
Atomic force microscopy visualization of injuries in Enterococcus faecalis surface caused by Er,Cr:YSGG and diode lasers
2014
Aim: To visualize by Atomic Force Microscopy the alterations induced on Enterococcus. faecalis surface after treatment with 2 types of laser: Erbium chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser and Diode laser. Material and Methods: Bacterial suspensions from overnight cultures of E. faecalis were irradiated during 30 seconds with the laser-lights at 1 W and 2 W of power, leaving one untreated sample as control. Surface alterations on treated E. faecalis were visualized by Atomic Force Microscopy (AFM) and its surface roughness determined. Results: AFM imaging showed that at high potency of laser both cell morphology and surface roughness resulted altered, and that several ce…
Self-Assembled Monolayer-Functionalized Half-Metallic Manganite for Molecular Spintronics
2012
(La,Sr)MnO(3) manganite (LSMO) has emerged as the standard ferromagnetic electrode in organic spintronic devices due to its highly spin-polarized character and air stability. Whereas organic semiconductors and polymers have been mainly envisaged to propagate spin information, self-assembled monolayers (SAMs) have been overlooked and should be considered as promising materials for molecular engineering of spintronic devices. Surprisingly, up to now the first key step of SAM grafting protocols over LSMO surface thin films is still missing. We report the grafting of dodecyl (C12P) and octadecyl (C18P) phosphonic acids over the LSMO half-metallic oxide. Alkylphosphonic acids form ordered self-a…
Formation and Rupture of Schottky Nanocontacts on ZnO Nanocolumns
2007
In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission …
Magnetism of Co-doped ZnO thin films
2007
We have investigated magnetic and transport properties of 5% Co-doped and undoped ZnO thin films deposited on $r$ plane ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ substrates by pulsed laser deposition. The Co doped films showed paramagnetic and ferromagnetic behavior as well as a high magnetoresistance and a small anomalous Hall effect. In a range of $0\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}5\phantom{\rule{0.3em}{0ex}}\mathrm{T}$ at low temperatures we observed a double sign change of the magnetoresistance. For undoped ZnO films, prepared by the same conditions, only a negative MR was observed, but surprisingly also a very small anomalous Hall effect. We explain our results…
Solvothermal synthesis derived Co-Ga codoped ZnO diluted magnetic degenerated semiconductor nanocrystals
2018
Authors kindly acknowledge to the Estonian Research Council ( PUT1096 , IUT2-25 , PUT735 ), the Estonian Centre of Excellence in Research project “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics (TK141), and the financial support of HZB. We are grateful to the staff of BESSY II for the assistance and co-operation during the synchrotron-based measurements.
Modeling and parameter identification of crystalline silicon photovoltaic devices
2011
This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.