Search results for "Semiconductor"
showing 10 items of 974 documents
Optical-field induced volume- and surface-relief formation phenomenon in thin films of vitreous chalcogenide semiconductors
2013
In this report the study of direct recording of the surface relief gratings on amorphous chalcogenide thin (2.5-5μm) films is presented by three different recording setups. Recording was performed on As2S3 by 532nm wavelength laser light. Additionally the evolution of surface relief in dependence from the recording time and polarization has been investigated in detail. The mechanism of the direct recording of surface relief on amorphous chalcogenide films based on the photo-induced plasticity has been discussed.
Inkjet Printable ZnO/PEDOT:PSS Heterojunction for Thin Flexible Semi-Transparent Optoelectronic Sensors
2020
International audience; Flexible sensors play an increasing role in printed electronics and are of interest for optoelectronic applications in flexible robotics and industrial automation. Thus, we have investigated the hybrid inorganic-organic junction between ZnO and PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate). A thin ITO (indium tin oxide) layer on PET (polyethylene terephthalate) foils was used as substrate electrode. ZnO was deposited from a nanoparticle (NP) suspension by electrophoretic deposition. For comparison, we have used three different methods for the deposition of PEDOT:PSS, namely (i) drop casting, (ii) dip-coating, (iii) inkjet printing. For the result…
The lower rather than higher density charge carrier determines the NH 3 -sensing nature and sensitivity of ambipolar organic semiconductors
2018
International audience; Despite the extensive studies and great application potentials, the sensing nature of ambipolar organic semiconductor gas sensors still remains unclarified, unlike their inorganic counterparts. Herein, different numbers of thiophenoxy groups are introduced into the phthalocyanine periphery of bis(phthalocyaninato) rare earth semiconductors to continuously tune their HOMO and LUMO energies, resulting in the ambipolar M[Pc(SPh)(8)](2) [M = Eu (1), Ho (2)] and p-type M(Pc)[Pc(SPh)(8)] [M = Eu (3), Ho (4)]. An OFET in combination with direct I-V measurements over the devices from the self-assembled nanostructures of 1-4 revealed the original electron and hole densities (…
Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties
2016
Abstract MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth.
Crossed 2D versus Slipped 1D π-Stacking in Polymorphs of Crystalline Organic Thin Films
2019
Polymorphs of organic semiconductors are of great interest as they shed light to structure-property relationships. The full X-ray thin film structure analysis of two polymorphs (B, G) of an important n-type semiconducting dicyano-distyrylbenzene based small molecule (CN-TFPA) is reported. Drastically different structures of the monotropic phases are revealed, that is an uncommon 2D crossed π-stacked arrangement for the B-phase versus a 1D slipped π-stack for G. Both phases exhibit a layered structure in the (100) plane with high structural integrity, driven by the hydrophobic contacts of the terminal CF3 groups; as (100) coincides with the film surface, this allows for exfoliation by scotch…
Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons
2020
Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fast neutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB) failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did not induce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing at ChipIr …
Failure Estimates for SiC Power MOSFETs in Space Electronics
2018
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed
2D photonic defect layers in 3D inverted opals on Si platforms
2006
Dielectric spheres synthesised for the fabrication of self-organized photonic crystals such as opals offer large opportunities for the design of novel nanophotonic devices. In this paper, we show a hexagonal superlattice monolayer of dielectric spheres inscribed on a 3D colloidal photonic crystal by e-beam lithography. The crystal is produced by a variation of the vertical drawing deposition method assisted by an acoustic field. The structures were chosen after simulations showed that a hexagonal super-lattice monolayer in air exhibits an even photonic band gap below the light cone if the refractive index of the spheres is higher than 1.93.
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
2015
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…
Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO2
2017
Organic semiconductor light absorbers are receiving attention for their potential application in photoelectrochemical (PEC) cells for renewable fuels generation. Key to their advancement is precise control of the interfaces between charge-selective contacts, absorber layers, and electrocatalysts, while maintaining compatibility with an aqueous electrolyte environment. Here we demonstrate a new process for low-temperature atomic layer deposition (ALD) of TiO2 onto a P3HT:PCBM polymer blend surface for stable high-performance organic PEC photocathodes. This ALD TiO2 layer provides three key functions: (1) formation of an electron-selective contact to the polymer to enable photovoltage and pho…