Search results for "Semiconductor"
showing 10 items of 974 documents
Well GeHP detector calibration for environmental measurements using reference materials
2016
International audience; A well-type detector installed in the Modane underground Laboratory (LSM) can combine both low background and high detection efficiency and it is well suited for the analysis of small amounts of environmental samples. Reference materials such as IAEA-447 (moss-soil), IAEA-RG-Th1 and IAEA-RG-U1 were used for the detector calibration, owing to a chemical composition close to those of the environmental samples. Nevertheless , the matrix effects and the true coincidence summing effects must be corrected from the full energy peak efficiency (FEPE). The FEPE was performed for a wide range of energy by a semi-empirical method using Monte Carlo simulation (MCNP6), intended f…
New approach to energy loss measurements
2002
Abstract A new approach to energy loss measurements is proposed. In the same experiment electronic stopping force (power) in gold, nickel, carbon, polycarbonate and Havar for 40 Ar, 28 Si, 16 O, 4 He and 1 H ions in the energy range 0.12–11 MeV/u has been measured. In this paper we give the full results for gold, nickel, and carbon and for 40 Ar, 16 O, 4 He and 1 H ions. Good agreement of the measured stopping force values for light ions with literature data is interpreted as the positive test of the experimental technique. The same technique used with heavy ions yields agreement with the published data only for energies above 1 MeV/u. At lower energies we observe progressively increasing d…
Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance
2019
International audience; The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated with a process modification to increase the radiation tolerance. Two large scale prototypes, Monopix with a column drain synchronous readout, and MALTA with a novel asynchronous architecture, have been fully tested and characterized both in the laboratory and in test beams. This showed that certain aspects have to be improved such as charge collection after irradiation and the output data rate. Some improvements resulting from extensive TCAD simulations were verified on a small test chip, Mini-MALTA. A detailed cluster analysis, using data from laboratory…
Reliability of Monte Carlo event generators for gamma-ray dark matter searches
2013
We study the differences in the gamma-ray spectra simulated by four Monte Carlo event generator packages developed in particle physics. Two different versions of PYTHIA and two of HERWIG are analyzed, namely PYTHIA 6.418 and HERWIG 6.5.10 in Fortran and PYTHIA 8.165 and HERWIG 2.6.1 in C++. For all the studied channels, the intrinsic differences between them are shown to be significative and may play an important role in misunderstanding dark matter signals.
The Mu3e Data Acquisition
2020
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $\mu^+\to e^+e^-e^+$ with a sensitivity of one in 10$^{16}$ muon decays. The first phase of the experiment is currently under construction at the Paul Scherrer Institute (PSI, Switzerland), where beams with up to 10$^8$ muons per second are available. The detector will consist of an ultra-thin pixel tracker made from High-Voltage Monolithic Active Pixel Sensors (HV-MAPS), complemented by scintillating tiles and fibres for precise timing measurements. The experiment produces about 100 Gbit/s of zero-suppressed data which are transported to a filter farm using a network of FPGAs and fast optical links. On the filte…
Technical design of the phase I Mu3e experiment
2021
Nuclear instruments & methods in physics research / A 1014, 165679 (2021). doi:10.1016/j.nima.2021.165679
Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
2019
Abstract The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × 50 μ m ) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total si…
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
2020
Abstract The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively. The energies and dose levels were selected to test radiation levels relevant for space applications. The degradation was evaluated through dark current and external quantum efficiency changes during (within 1 h after each step) and after (some days after) full irradiation sequences. Furthermore, the black silicon photodetectors were compared to planar silicon induced junction and planar silicon pn-junction photodetectors to assess the co…
AGATA-Advanced GAmma Tracking Array
2012
WOS: 000300864200005
Changes in the thermoelectric response of vitreous carbon due to the irradiation by γ-rays
2014
In order to study variations in the thermoelectric properties, some commercial glassy carbon samples were subjected to a sequence of steps consisting of a combination of irradiation with γ-rays produced by radioisotopes 60Co, and hydrogen adsorption when the samples were put in an over pressured atmosphere of this gas. With this procedure it was possible to observe that the irradiation decreases the electrical conductivity of glassy carbon samples and the hydrogenation changes the sign of Seebeck coefficient. The material initially is an n-type semiconductor, but with hydrogenation changes to p-type semiconductor. X-ray diffraction analysis showed that the hydrogenated vitreous carbon is mo…