Search results for "Semiconductor"

Independent tuning of electronic levels in pentacene by site-specific substitution.

2008

Temperature elevations in endosseous dental implants and the peri-implant bone during diode-laser-assisted surface decontamination

2002

The aim of the study was to investigate temperature elevations in the implant surface and the peri-implant bone during simulated surface decontamination of endosseous dental implants with an 809 nm semiconductor laser. Stepped cylinder implants were inserted into bone blocks cut from resected pig femurs. An artificial peri-implant bone defect provided access for the irradiation of the implant surface. A 600 micron optic fiber was used at a distance of 0.5 mm from the implant surface. Power output varied between 0.5 and 2.5 W in the cw-mode. Power density was between 176.9 and 884.6 Wcm -2 . The bone block was placed into a 37 degree(s)C water bath in order to simulate in vivo thermal conduc…

Tuning Spin Current Injection at Ferromagnet-Nonmagnet Interfaces by Molecular Design.

2020

There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore the injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both the spin injection efficiency at the interface and the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.

Crystal structure of HgGa2Se4 under compression

2013

We report on high-pressure x-ray diffraction measurements up to 17.2 GPa in mercury digallium selenide (HgGa2Se4). The equation of state and the axial compressibilities for the low-pressure tetragonal phase have been determined and compared to related compounds. HgGa2Se4 exhibits a phase transition on upstroke toward a disordered rock-salt structure beyond 17 GPa, while on downstroke it undergoes a phase transition below 2.1 GPa to a phase that could be assigned to a metastable zinc-blende structure with a total cation-vacancy disorder. Thermal annealing at low- and high-pressure shows that kinetics plays an important role on pressure-driven transitions.

Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions

2014

The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associat…

Pressure Dependence of the Low-Frequency Dielectric Constant in III-VI Semiconductors

1999

In this work we report on the pressure dependence of the low-frequency dielectric constant parallel to the c-axis (e∥) in GaS, GaSe, and InSe as obtained from direct capacitance measurements. A large increase of e∥ with pressure has been observed. The pressure change of the lattice polarizability along the c-axis is calculated in the framework of a rigid-ion model from the change of the angle of the anion–cation bond with respect to the layer plane, which results in a slight increase of the lattice contribution. Consequently, the pressure behaviour of e∥ is proposed to arise from the large increase of the electronic polarizability along the c-axis. This is explained through a decrease of th…

Electronic structure of CuAlO2 and CuScO2 delafossites under pressure

2007

The electronic structure of CuAlO 2 and CuScO 2 delafossites is investigated by means of optical absorption measurements under pressure and ab initio band structure calculations. Measurements are carried out on CuAlO 2 monocrystals and pulsed laser deposited CuAlO 2 and CuScO 2 thin films up to 20 GPa. CuAlO 2 is an indirect semiconductor that is stable in the pressure range explored here. The pressure coefficients of the indirect and direct gaps are found to be 15 meV/GPa and 2 meV/GPa respectively. CuScO 2 is a direct semiconductor and the pressure coefficient of the excitonic peak energy is -5.5 meV/GPa. Two reversible phase transitions are observed in CuScO 2 . At 13 GPa the delafossite…

Crystal Chemistry of CdIn2S4, MgIn2S4, and MnIn2S4 Thiospinels under High Pressure

2012

We report X-ray diffraction measurements in CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature and high pressures. The pressure dependences of the structural parameters have been determined and compared to those from theoretical calculations. It is found that the three thiospinels have similar bulk moduli (B-0) between 75 and 80 GPa (B-0' similar to 3). The degree of inversion of these thiospinels has also been determined. The three thiospinels undergo a phase transition toward a defect LiTiO2-type structure above 9.5, 8.3, and 6.8 GPa in CdIn2S4, MgIn2S4, and MnIn2S4, respectively. Interestingly, the low- and high-pressure phases belong to the same symmetry group (Fd-3m), the tr…

Topological analysis of chemical bonding in the layered FePSe3 upon pressure-induced phase transitions

2020

The authors acknowledge the assistance of the University Computer Center of Saint-Petersburg State University in the accomplishment of high-performance computations. A.K. is grateful to the Latvian Council of Science project no. lzp-2018/2-0353 for financial support. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.

Structural and vibrational study of pseudocubic CdIn2Se4 under compression

2014

We report a comprehensive experimental and theoretical study of the structural and vibrational properties of a-CdIn2Se4 under compression. Angle-dispersive synchrotron X-ray diffraction and Raman spectroscopy evidence that this ordered-vacancy compound with pseudocubic structure undergoes a phase transition (7 GPa) toward a disordered rocksalt structure as observed in many other ordered-vacancy compounds. The equation of state and the pressure dependence of the Raman-active modes of this semiconductor have been determined and compared both to ab initio total energy and lattice dynamics calculations and to related compounds. Interestingly, on decreasing pressure, at similar to 2 GPa, CdIn2Se…