Search results for "Semiconductor"
showing 10 items of 974 documents
Nanochemistry Aspects of Titania in Dye Sensitized Solar Cells
2009
We analyze the main nanochemistry factors affecting photovoltaic performance in TiO2 employed as wide bandgap semiconductor in dye-sensitized solar cells (DSCs). What is the best morphology of the oxide? Which processes yield the required structures? Finally, putting the discussion in the context of the rapid evolution of photovoltaic technologies, we argue that new titania nanostructures will form the basic component of second-generation solar modules based on dye solar cells.
Photocatalytic membrane reactors: fundamentals, membrane materials and operational issues
2013
Abstract: This chapter reports the properties of semiconductor materials used in heterogeneous photocatalysis together with a comparison of heterogeneous photocatalytic systems and a brief description of the types of membranes that can be used. Some aspects of membrane operations, such as fouling, separation of a photocatalyst and effectiveness of photodegradation on permeate quality are discussed.
Electrical characterization of low power CIGSSe photovoltaic modules
2015
This paper presents the electrical characterization of low power CIGSSe photovoltaic (PV) modules. Such investigation is achieved to perform a comparison of their performances with conventional silicon PV modules. For this purpose, a test bench, suitable for the characterization of both traditional and innovative low power modules, has been set-up and experimental results are accurately described and discussed.
Investigation on Cascode Devices for High Frequency Electrical Drives Applications
2019
In the last years a widespread development in the market of electrical drives employing high-speed electrical machines has occurred in various industrial fields, due to the extremely high power density that can be reached. Nevertheless, to maintain output power quality without using bulky filtering networks, DC-AC converters should be controlled by means of higher PWM switching frequencies. New switching device technologies, such as Field Effect Transistors based on SiC and GaN, are therefore gathering momentum in order to comply with the higher working frequencies. To operate under high frequencies and at the same time at high voltage levels, alternative circuital configurations for switch…
Three-dimensional dynamic light scattering
1999
Abstract We describe the employment of a novel light-scattering scheme for the decorrelation of multiple scattering in strongly turbid samples. The three-dimensional scheme, which has been proposed already theoretically, shows certain advantages compared with the two-colour apparatus, which is commercially available. We describe our set-up in detail; features are the use of modern semiconductor laser diodes and contemporary single-mode fibre receivers. We show experimentally that the optimal signal-to-noise ratio (or intercept) β opt = 0.20, which is obtainable with our set-up, can be quantitatively calculated from the measured uncertainties in the alignment. In particular, we give a detail…
Effects of quantum statistics of phonons on the thermal conductivity of silicon and germanium nanoribbons.
2012
: We present molecular dynamics simulation of phonon thermal conductivity of semiconductor nanoribbons with an account for phonon quantum statistics. In our semiquantum molecular dynamics simulation, dynamics of the system is described with the use of classical Newtonian equations of motion where the effect of phonon quantum statistics is introduced through random Langevin-like forces with a specific power spectral density (color noise). The color noise describes interaction of the molecular system with the thermostat. The thermal transport of silicon and germanium nanoribbons with atomically smooth (perfect) and rough (porous) edges are studied. We show that the existence of rough (porous)…
Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells
2015
Light scattering from ZnO nanorods (NR) is investigated, modeled, and applied to a solar cell. ZnO NR (120-1300 nm long, 280-60 nm large), grown by low-cost chemical bath deposition at 90 degrees C, exhibit diffused-to-total transmitted light as high as 70% and 30% in the 400 and 1000 nm wavelength range, respectively. Data and scattering simulation show that ZnO NR length plays a crucial role in light diffusion effect. A transparent ZnO NR film grown on glass and placed on top of a 1 mu m thick c-Si solar cell is shown to enhance the light-current conversion efficiency for wavelengths longer than 600 nm. (C) 2015 AIP Publishing LLC.
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…