Search results for "Semiconductor"

showing 10 items of 974 documents

Liquid-crystalline ordering as a concept in materials science: from semiconductors to stimuli-responsive devices.

2013

While the unique optical properties of liquid crystals (LCs) are already well exploited for flat-panel displays, their intrinsic ability to self-organize into ordered mesophases, which are intermediate states between crystal and liquid, gives rise to a broad variety of additional applications. The high degree of molecular order, the possibility for large scale orientation, and the structural motif of the aromatic subunits recommend liquid-crystalline materials as organic semiconductors, which are solvent-processable and can easily be deposited on a substrate. The anisotropy of liquid crystals can further cause a stimuli-responsive macroscopic shape change of cross-linked polymer networks, w…

chemistry.chemical_classificationSolid-state chemistryMaterials scienceNanotechnologyGeneral ChemistryPolymerCatalysisCrystalOrganic semiconductorchemistryLiquid crystalArtificial muscleSelf-assemblyAnisotropyAngewandte Chemie (International ed. in English)
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Hybrid Molecular Materials Based upon the Photochromic Nitroprusside Complex, [Fe(CN)5NO]2-, and Organic π-Electron Donors. Synthesis, Structure, and…

2000

An organic/inorganic hybrid salt is obtained by combination of the photochromic nitroprusside complex with the organic donor TTF. The organic part shows an unprecedented 2D organization formed by an orthogonal arrangement of TTF hexamers and monomers. However, the donor layers are formed by pairs of moderately interacting dimeric (TTF)22+ units surrounded by neutral TTF molecules in such a way that the charge is localized and the compound is a semiconductor. Short contacts between the organic layers and the nitroprusside anions are present that may affect the photophysical properties of the nitroprusside.

chemistry.chemical_classificationbusiness.industrySalt (chemistry)ElectronPhotochemistryInorganic ChemistryPhotochromismchemistry.chemical_compoundCrystallographyMonomerSemiconductorchemistryPiMoleculePhysical and Theoretical ChemistrybusinessTetrathiafulvaleneInorganic Chemistry
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Optical Absorption of Zinc Selenide Doped with Cobalt (Zn1-xCoxSe) under Hydrostatic Pressure

2000

Optical absorption of the diluted magnetic semiconductor Zn 1-x Co x Se (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14 GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.5 to 1.8 eV, with a negligible pressure shift (i.e. (0.45 ± 0.05) meV/GPa) which we have identified as the Co 2+ (3d 7 ) internal transition 4 A 2 (F) → 4 T 1 (P) and (ii) an onset in the energy range 2 to 2.7 eV which redshifts with pressure (dE/dP = (-8.1 ± 0.6) meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co 2+ (3d 7 ) levels. On the assumption that tho…

chemistry.chemical_compoundAbsorption spectroscopyAbsorption edgeChemistryHydrostatic pressureDopingAnalytical chemistryZinc selenideMagnetic semiconductorCondensed Matter PhysicsAbsorption (electromagnetic radiation)Diamond anvil cellElectronic Optical and Magnetic Materialsphysica status solidi (a)
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Optical absorption of zinc selenide doped with cobalt (Zn1−xCoxSe) under hydrostatic pressure

2000

Abstract The optical absorption of the diluted magnetic semiconductor Zn1−xCOxSe (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.6−1.8eV, with a negligible pressure shift (i.e., 0.45 ± 0.05 meV/GPa) which we have identified as the Co2+(3d7) internal transition 4A2(F)→+4T1(P) and (ii) an onset in the energy range 2−2.7eV which redshifts with pressure (−8.1±0.6meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co2+(3d7) levels.

chemistry.chemical_compoundRange (particle radiation)chemistryAbsorption edgeDopingHydrostatic pressureAnalytical chemistrychemistry.chemical_elementZinc selenideMagnetic semiconductorCondensed Matter PhysicsAbsorption (electromagnetic radiation)CobaltHigh Pressure Research
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Functional CdSe and CdSe/ZnS nanoparticles capped with thiols: photophysical and photochemical properties and applications as sensors

2013

Esta tesis se centra en el efecto simbiótico entre los QDs de CdSe o CdSe/ZnS y sus ligandos orgánicos, y las ventajas de este efecto para mejorar la funcionalidad del QD y/o del ligando, o crear una nueva funcionalidad del sistema. Así : 1. la superficie de las nanopartícula recubierta con ligandos orgánicos puede permitir al QD i) permanecer estable en disolventes orgánicos o acuosos, debido a la repulsión estérica o iónica entre las nanopartículas, ii) mantener o aumentar sus propiedades emisivas (pasivación de los defectos de superficie, aumento de distancia entre nanopartícula y moléculas desactivadoras), y/o iii) para proporcionar funcionalidad a la nanopartícula. 2. la forma esférica…

colloidal semiconductorsUNESCO::QUÍMICAquantum dotsnanoparticles:QUÍMICA [UNESCO]
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Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

2016

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…

compound semiconductorsMaterials scienceAnnealing (metallurgy)Analytical chemistry02 engineering and technology010402 general chemistryEpitaxy01 natural sciencesArsenidelaw.inventionAtomic layer depositionchemistry.chemical_compoundGallium arsenideImpuritylawMaterials ChemistryThin filmCrystallizationta216ta116ta114General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesAmorphous solidamorphous filmschemistry0210 nano-technologystoichiometric filmsJournal of Materials Chemistry C
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Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

2009

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector…

compound semiconductorsSiliconcompound semiconductorchemistry.chemical_elementNanotechnologyGermaniumReviewlcsh:Chemical technologyBiochemistryAnalytical Chemistrychemistry.chemical_compoundX-ray and gamma ray spectroscopylcsh:TP1-1185Electrical and Electronic EngineeringInstrumentationcompound semiconductors; CdTe and CdZnTe detectors; X-ray and gamma ray spectroscopyPhysicsSpectrometerbusiness.industryDetectorSettore FIS/01 - Fisica SperimentaleWide-bandgap semiconductorCdTe and CdZnTe detectorCdTe and CdZnTe detectorsSemiconductor radiation detectorsAtomic and Molecular Physics and OpticsCadmium telluride photovoltaicsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Cadmium zinc telluridechemistryOptoelectronicsbusiness
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Density functional/molecular dynamics simulations of phase-change materials

2013

computer memory materialsrakennecrystallizationamorphoustiheysfunktionaaliteoriakiteytyminenphase-change materialsfaasimuutosmateriaalisemiconductormolecular dynamicsvitrificationchalcogenideatomic structureatomirakennepuolijohteetkalkogenidimolekyylidynamiikkacomputer simulationscrystallinesimulointimuistitdensity functional theory
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Efectos de los campos eléctrico y magnético sobre los estados electrónicos excitados en nanoestructuras cuánticas semiconductoras

2013

Las nanoestructuras cuánticas semiconductoras ofrecen un gran potencial en cuanto al diseño de nuevos materiales con propiedades ópticas novedosas. El confinamiento cuántico y la aplicación de campos eléctrico y magnético externos muestran una riqueza de efectos cuánticos cuya aplicación es en muchos casos desconocida. Es notable al respecto la gran cantidad de comprtamientos no lineales que muestran, por ejemplo, la energía excitónica, los tiempos de recombinación, el efecto túnel y la consiguiente extinción de la señal espectral de fotoluminiscencia en los semiconductores. Lo notable de los modelos, y que queda confirmado por los experimentos es la competición entre tres efectos presentes…

confinamientoUNESCO::FÍSICA::Física del estado sólido ::Semiconductores:FÍSICA::Física del estado sólido ::Semiconductores [UNESCO]Starksemicondcutorexcitónnanoestructura
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ChemInform Abstract: Tuning the Band Gap of PbCrO4Through High-Pressure: Evidence of Wide-to-Narrow Semiconductor Transitions.

2014

Commercial polycrystalline and cleaved platelets from natural PbCrO4 are studied in a diamond anvil cell at ≤ 21 GPa.

congenital hereditary and neonatal diseases and abnormalitiesbusiness.industryBand gapChemistryA diamondmacromolecular substancesGeneral MedicineSemiconductorstomatognathic systemhemic and lymphatic diseasesHigh pressureparasitic diseasesOptoelectronicsCrystallitebusinessChemInform
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