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RESEARCH PRODUCT
Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications
Pietro UbertiniAnna Maria ManciniLeonardo AbbeneStefano Del SordoEzio CaroliAndrea Zappettinisubject
compound semiconductorsSiliconcompound semiconductorchemistry.chemical_elementNanotechnologyGermaniumReviewlcsh:Chemical technologyBiochemistryAnalytical Chemistrychemistry.chemical_compoundX-ray and gamma ray spectroscopylcsh:TP1-1185Electrical and Electronic EngineeringInstrumentationcompound semiconductors; CdTe and CdZnTe detectors; X-ray and gamma ray spectroscopyPhysicsSpectrometerbusiness.industryDetectorSettore FIS/01 - Fisica SperimentaleWide-bandgap semiconductorCdTe and CdZnTe detectorCdTe and CdZnTe detectorsSemiconductor radiation detectorsAtomic and Molecular Physics and OpticsCadmium telluride photovoltaicsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Cadmium zinc telluridechemistryOptoelectronicsbusinessdescription
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.
year | journal | country | edition | language |
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2009-05-12 |