Search results for "Silicon"
showing 10 items of 1391 documents
Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis
2010
Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phas…
centers induced by γ irradiation in sol–gel synthesized oxygen deficient amorphous silicon dioxide
2007
The effects of room temperature γ-ray irradiation up to a dose of ∼1300 kGy are investigated by Electron paramagnetic resonance (EPR) measurements in amorphous silicon dioxide (a-SiO2) produced by a sol-gel synthesis method that introduces O{triple bond, long}Si{single bond}Si{triple bond, long}O oxygen deficiency. We have found that exposure to radiation generates the Eγ′ center with the same spectral features found in high purity commercial a-SiO2. The maximum concentration of defects induced in this sol-gel material indicates that its resistance to radiation is comparable to that of synthetic fused a-SiO2. The concentration of Eγ′ center increases with irradiation, featuring a sublinear …
The Miniball spectrometer
2013
The Miniball germanium detector array has been operational at the REX (Radioactive ion beam EXperiment) post accelerator at the Isotope Separator On-Line facility ISOLDE at CERN since 2001. During the last decade, a series of successful Coulomb excitation and transfer reaction studies have been performed with this array, utilizing the unique and high-quality radioactive ion beams which are available at ISOLDE. In this article, an overview is given of the technical details of the full Miniball setup, including a description of the γ-ray and particle detectors, beam monitoring devices and methods to deal with beam contamination. The specific timing properties of the REX-ISOLDE facility are hi…
The SPEDE Spectrometer: Combined In-Beam γ-ray and Conversion Electron Spectroscopy with Radioactive Ion Beams
2015
The SPEDE spectrometer [1] aims to combine a silicon detector, for the detection of electrons, with the MINIBALL γ-ray detection array for in-beam studies employing radioactive ion beams at the HIE-ISOLDE facility at CERN. The setup will be primarily used for octupole collectivity [2] and shape coexistence studies [3, 4] in Coulomb excitation experiments. In the shape coexistence cases the transitions between states of the same spin and parity have enhanced E0 strength [5]. Additionally the 0→0 transitions, typically present in nuclei exhibiting shape coexistence [6], can only occur via E0 transitions, i.e. via internal conversion electron emission.
Structural properties of the range-II- and range-III order in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy
2010
In the present work we report an experimental investigation by electron paramagnetic resonance spectroscopy on the hyperfine structure of the E. point defect, probing the local arrangement of the network (range-II order), and by Raman spectroscopy on the D 1 and D 2 lines, probing mean features of the network (range-III order). Our studies, performed on a-SiO 2 samples thermally treated at 1000 °C in air for different time durations, show that changes of the hyperfine structure and of the D 1 and D 2 lines occur in a correlated way. These results give strong evidence that the range-II and range-III order properties are intimately related to each other and that these properties are determine…
Temperature dependence of the absorption properties of silanol groups in amorphous : Are silanol groups organized in clusters?
2011
Abstract We present a study on the vacuum-ultraviolet (VUV) and infrared (IR) absorption of silanol groups in amorphous silicon dioxide ( a - SiO 2 ) in the range of temperature from 4 to 300 K. The observed temperature induced modifications of IR and VUV absorption spectra are interpreted as due to a process of conversion of free into H-bonded silanol groups. The changes of the amplitude of the VUV absorption spectra are shown to be linearly correlated to the changes of the IR absorption of free Si–OH groups. This point together with the evidence that the shape of the Si–OH VUV absorption does not depend on temperature demonstrates that the different silanol group sub-species have differen…
UV LED Photo Electron Ionisation for MS and IMS
2009
AbstractA new MEMS ionisation source for spectrometry is presented on the basis of photo electron emission in silicon MEMS. Lanthanum hexaboride ceramic sample and thin nanolayer proved their suitability for photo electron emission in the desired photon energy range of 3.1eV to 3.9eV which correspond to industrially available UV LED. This ionisation source alternative to a Photoionisationdetector (PID) is inspected of its gas ionisation behaviour using gases with an ionisation potential over and under an energy of 10,6eV. To enable the ionisation of the gases the emitted electrons were accelerated to a well-defined energy. The results of these investigations are comparable to the UV dischar…
The correlation of the 7.6 eV optical absorption band in pure fused silicon dioxide with twofold-coordinated silicon
1992
Abstract The optical absorption band at 7.6 eV, which appears in oxygen deficient pure silica, does not correlate with any ESR signal in non-irradiated samples. Longlasting illumination at 80 K in the range of its absorption leads to an increase of the absorption band at 5 eV. Subsequent heating to 290 K restores the initial absorption. These data can be explained as photodissociation and thermal recreation of a complex defect containing a twofold-coordinated silicon defect. This complex defect is responsible for the 7.6 eV absorption band.
Finely tunable laser based on a bulk silicon wafer for gas sensing applications
2016
In this work a very simple continuously tunable laser based on an erbium ring cavity and a silicon wafer is presented. This laser can be tuned with very fine steps, which is a compulsory characteristic for gas sensing applications. Moreover the laser is free of mode hopping within a spectral range sufficiently wide to match one of the ro-vibrational lines of a target molecule. Here the proposed laser reached, at ∼1530 nm, a continuous tuning range of around 950 pm (>100 GHz) before mode hopping occurred, when a silicon wafer of 355 μm thickness was used. Additionally, the laser can be finely tuned with small tuning steps of <12 pm, achieving a resolution of 84.6 pm °C-1 and by using a therm…
Low energy routing platforms for optical interconnects using active plasmonics integrated with Silicon Photonics
2013
Power consumption and bandwidth of electronics appear as the main set of technology barriers in next-generation Data Center and High-Performance Computing (HPC) environments. The limited capacity and pitch lane of electrically wired interconnects require the development of new disruptive technologies to cope with the massive amount of data moving across all hierarchical communication levels, namely rack-to-rack, backplane, chip-to-chip and even on-chip interconnections. Plasmonics comes indeed as a disruptive technology that enables seamless interoperability between light beams and electronic control signals through the underlying metallic layer, providing thereby an inherent energy-efficie…