6533b857fe1ef96bd12b5072

RESEARCH PRODUCT

centers induced by γ irradiation in sol–gel synthesized oxygen deficient amorphous silicon dioxide

Aldo ParlatoNorberto ChiodiniSimonpietro AgnelloAlberto Paleari

subject

RadiationOxygen deficientSettore ING-IND/20 - Misure E Strumentazione NucleariChemistrySettore FIS/01 - Fisica SperimentaleSilicaRadiationCondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionSilica Radiation Electron spin resonance Sol–gel aerogel and solution chemistry DefectsChemical bondlawAmorphous silicon dioxideElectron spin resonanceMaterials ChemistryCeramics and CompositesPhysical chemistryDefectsIrradiationElectron paramagnetic resonanceSol–gel aerogel and solution chemistrySaturation (magnetic)Sol-gelNuclear chemistry

description

The effects of room temperature γ-ray irradiation up to a dose of ∼1300 kGy are investigated by Electron paramagnetic resonance (EPR) measurements in amorphous silicon dioxide (a-SiO2) produced by a sol-gel synthesis method that introduces O{triple bond, long}Si{single bond}Si{triple bond, long}O oxygen deficiency. We have found that exposure to radiation generates the Eγ′ center with the same spectral features found in high purity commercial a-SiO2. The maximum concentration of defects induced in this sol-gel material indicates that its resistance to radiation is comparable to that of synthetic fused a-SiO2. The concentration of Eγ′ center increases with irradiation, featuring a sublinear dose dependence up to the highest investigated dose and showing no saturation effects. This defect generation process suggests that the chemically induced precursor influences the mechanisms of Eγ′ center generation. © 2007 Elsevier B.V. All rights reserved.

yearjournalcountryeditionlanguage
2007-04-01Journal of Non-Crystalline Solids
https://doi.org/10.1016/j.jnoncrysol.2006.10.026