Search results for "Silicon"
showing 10 items of 1391 documents
A procedure to calculate the I–V characteristics of thin-film photovoltaic modules using an explicit rational form
2015
Abstract Accurate models of the electrical behaviour of photovoltaic modules are effective tools for system design. One or two diode equivalent circuits have been widely used even though some mathematical difficulties were found dealing with implicit equations. In this paper, a new model based on a simple rational function, which does not contain any implicit exponential form, is presented. The model was conceived in order to be used with thin-film photovoltaic modules, whose current–voltage curves are characterised by very smooth shapes. The parameters of the model are evaluated by means of the derivatives of the issued characteristics in the short circuit and open circuit points at standa…
A procedure to evaluate the seven parameters of the two-diode model for photovoltaic modules
2019
Abstract The paper presents an analytical procedure to calculate the seven parameters of the two-diode model of photovoltaic (PV) panels for any value of the solar irradiance and cell temperature. Six parameters (the photocurrent, the diode reverse saturation currents, the quality factor of the first diode and the series and shunt resistances), are evaluated by solving the equations related to the properties of the main points of the current-voltage (I-V) characteristics. The further information, necessary to calculate the entire set of seven truly independent parameters, is based on two conditions that have to be simultaneously satisfied: 1) the exclusion of negative values of the model pa…
Plasmonic and diffractive nanostructures for light trapping—an experimental comparison
2015
Metal nanoparticles and diffractive nanostructures are widely studied for enhancing light trapping efficiency in thin-film solar cells. Both have achieved high performance enhancements, but there are very few direct comparisons between the two. Also, it is difficult to accurately determine the parasitic absorption of metal nanoparticles. Here, we assess the light trapping efficiencies of both approaches in an identical absorber configuration. We use a 240 nm thick amorphous silicon slab as the absorber layer and either a quasi-random supercell diffractive nanostructure or a layer of self-assembled metal nanoparticles for light trapping. Both the plasmonic and diffractive structures strongly…
Photonic-crystal silicon-nanocluster light-emitting device
2006
We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integ…
Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells
2012
We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.
Comparison between textured SnO2:F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon solar cells by forward bias impedance…
2013
Abstract In this paper we compare the performance of the textured SnO2:F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon (a-Si:H) solar cells. We use standard current–voltage (I–V) electrical characterization methods coupled with forward bias small signal impedance analysis. We show the efficacy of this technique to determine the effective carrier lifetime in photovoltaic cells. We show that such effective lifetimes are indeed directly connected to the respective dark diode saturation currents. We also find that the effective lifetime is constant with the temperature in the 0–70 °C range and it is significantly better for the solar cell with Mo diode contact. Th…
An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules
2020
Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…
Crystallization kinetics of amorphous SiC films: Influence of substrate
2005
Abstract The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nano-crystalline β-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 °C. A modified Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into β-SiC as an interface controlled, three-dimensional growth processes fr…
Processing of amorphous Si by pulsed laser irradiation at different wavelengths
2012
Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2 nd and 3 rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm 2 for the 2 nd harmonics and 155 mJ/cm 2 for the 3 rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
2011
We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as ∼700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. © 2011 Amer…