Search results for "Silicon"
showing 10 items of 1391 documents
Neutron yields from thick 12C and 9Be targets irradiated by 50 and 65 MeV deuterons
2001
Abstract Absolute intensities, angular distributions and energy spectra of neutrons emitted from thick 12 C and 9 Be targets irradiated with 50 and 65 MeV deuterons, respectively, have been measured. The neutron spectra were measured by time-of-flight (TOF) technique. The detectors provided continuous coverage from 0° to 60° where a significant angular dependence of emitted neutrons was found. The yield of 0.109(10) neutrons/deuteron from the 9 Be target is a factor of two higher than that from the 12 C target, 0.056(6) neutrons/deuteron. The hardness parameters of the neutron spectra are calculated for the radiation damage studies of the silicon devices.
Energy distribution of ternaryαparticles in spontaneous fission ofCf252
2008
The energy distribution of the ternary $\ensuremath{\alpha}$ particles in spontaneous fission of $^{252}\mathrm{Cf}$ was measured. For the first time an energy threshold as low as 1 MeV was reached. The experiment used an array of unshielded silicon detectors measuring energy and time-of-flight (TOF) of ternary particles in coincidence with fission fragments. The TOF resolution of the system was sufficient for clear separation of $^{6}\mathrm{He}$ and tritons from $^{4}\mathrm{He}$. The statistics were adequate to extract the $^{6}\mathrm{He}$/$^{4}\mathrm{He}$ yield ratio. For both $^{4}\mathrm{He}$ and $^{6}\mathrm{He}$, an excess in the yield (as compared to a Gaussian shape) was observe…
Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species
2009
Experimental linear energy transfer values of heavy ions in silicon are presented with comparison to estimations from different semi empirical codes widely used among the community. This paper completes the experimental LET data for the RADEF cocktail ions in silicon.
A novel Si strip array to investigate reaction and decay mechanisms
2008
Abstract The performance of a novel set-up of double-sided silicon micro-strip detectors (DSSD) developed for the GSI-R3B project (reaction studies with relativistic radioactive beams) is presented. The set-up was used in an experiment aimed at measuring the two-proton decay of 19 Mg. This experiment required to record simultaneously protons and the residual nuclei with good position and energy resolution. Our experimental results show that both protons and heavy ions ranging from Z = 2 up to Z = 12 can be identified with good signal-to-noise ratio and high energy and spatial resolution. This allowed to reconstruct 2- and 3-particle vertices with high precision, opening the possibility to…
Cryogenic operation of silicon detectors
2000
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as
Particle identification with time-of-flight and pulse-shape discrimination in neutron-transmutation-doped silicon detectors
2009
Abstract A method for the identification of energetic charged particles has been investigated based on the employment of pulse-shape discrimination (PSD) in a silicon detector in addition to conventional time-of-flight (ToF) techniques. The method makes use of the fact that, at fixed energy, the particle's velocity, or ToF, is a measure of the particle's mass A while the time structure of the current pulse in a silicon energy detector, used as the ToF stop, permits identification of nuclear charges Z. In the measurements presented here, ToF and PSD methods were applied simultaneously. We used micro-channel plate (MCP) detectors as fast time pick-offs and surface-barrier (SB) n-type Si detec…
Experience with the ALEPH silicon vertex detector
1992
Abstract The ALEPH experiment [1] at LEP is equipped with a vertex detector [2] using two layers of double-sided silicon strip detectors. These detectors allow a real two-dimensional measurement of charged particle tracks. The present (1991) detector has the inner layer at a radius of 6.5 cm and the outer layer at 11.5 cm. The theta angle coverage is ±33° for the inner layer and ±50° for the outer layer. The inner layer is made out of 9 faces with four silicon detectors each, the outer layer has 15 such faces. We use silicon detectors of 5 × 5 cm 2 and 300 μm thickness. The readout pitch is 100 μm at both sides and using capacitive charge division a resolution in the order of 10 μm can be a…
Implantation-decay station for low-energy proton measurements
2013
Abstract We have built an implantation-decay station for β - delayed proton and α decay studies at the focal plane of the Momentum Achromat Recoil Spectrometer (MARS) at the Cyclotron Institute of Texas A&M University. Energetic secondary beams with a small momentum spread are stopped in a controlled manner into a very thin silicon strip detector. In addition, high-purity germanium detectors are installed for γ ray detection. Here we give a description of the setup and the observed performance down to E p ≈ 200 keV using implanted 23 Al and 31 Cl sources.
High-spin structure of ^{95}Pd
2012
The level scheme of the neutron-deficient nucleus ${}^{95}$Pd has been studied with the ${}^{58}$Ni + ${}^{40}$Ca fusion-evaporation reaction at 135 MeV with the GASP $\ensuremath{\gamma}$-ray array, the ISIS silicon ball, and the N-ring neutron detector. Excited levels with spins at least up to $\frac{45}{2}\ensuremath{\hbar}$ are reported for both parities. The observed experimental data are compared to large-scale shell-model calculations.
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.