6533b854fe1ef96bd12addae

RESEARCH PRODUCT

Cryogenic operation of silicon detectors

K. BorerV. GranataF. VitobelloZ. LiT. O. NiinikoskiHans DijkstraA. EspositoO. DormondV. K. EreminP. BartaliniM ZavrtanikM ZavrtanikP. ChochulaG. RuggieroI. StavitskiT. RufP. CollinsP. BerglundC. Da ViaW. BellS. HeisingL. JungermannF. HaulerV.g. PalmieriE. GrigorievE. GrigorievL. SchmittChristopher ParkesS. SaladinoW. De BoerJan BuytaertT. J. V. BowcockS. JanosI.b.m. BarnettB. DezillieCarlos LourencoS. PaulM. MikužVladimir CindroSalvatore BuontempoVal O'sheaE. VerbitskayaKevin M. SmithS.r.h. DevineL. CasagrandeV. ChabaudR. FreiZ. Dimcovski

subject

PhysicsNuclear and High Energy PhysicsSiliconPhysics::Instrumentation and DetectorsPosition resolutionbusiness.industryDetectorchemistry.chemical_elementchemistryReverse biasRadiation damageOptoelectronicsIrradiationbusinessInstrumentationDiode detectorsSilicon microstrip detectors

description

This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as

yearjournalcountryeditionlanguage
2000-06-01Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
https://doi.org/10.1016/s0168-9002(00)00183-2