Search results for "Solid-state"
showing 10 items of 530 documents
Solid state bonding in extrusion and FSW: process mechanics and analogies
2006
Abstract The solid state bonding occurring in extrusion and in friction stir welding (FSW) processes is investigated through FEM models previously developed and validated. In particular, for the AA6082-T6 aluminum alloys, the most relevant field variables have been monitored and compared, such as strain, strain rate, effective stress and pressure. The aim of the research is the development of an effective FSW bonding criterion.
Asymmetric Dual-Grating Micro-Slit Configuration for Broadband Solid State Coherent Detection of THz Pulses
2016
We demonstrated solid-state broadband coherent Terahertz characterization based on the Terahertz Field Induced Second Harmonic effect in Silica. The THz detector consists of an asymmetric micro-slit array which can be operated at 200V applied bias.
Influence of Nitrogen Doping on Device Operation for TiO 2 -Based Solid-State Dye-Sensitized Solar Cells: Photo-Physics from Materials to Devices
2016
International audience; Solid-state dye-sensitized solar cells (ssDSSC) constitute a major approach to photovoltaic energy conversion with efficiencies over 8% reported thanks to the rational design of efficient porous metal oxide electrodes, organic chromophores, and hole transporters. Among the various strategies used to push the performance ahead, doping of the nanocrystalline titanium dioxide (TiO 2) electrode is regularly proposed to extend the photo-activity of the materials into the visible range. However, although various beneficial effects for device performance have been observed in the literature, they remain strongly dependent on the method used for the production of the metal o…
Investigation of lanthanum substitution effects in yttrium aluminium garnet: importance of solid state NMR and EPR methods
2020
Copyright © 2020, Springer Science Business Media, LLC, part of Springer Nature
Syntheses, crystal structures, and solid state NMR investigations of K4M2P6S25 and K3M2P5S18 (M=Ti, Sn)
2002
Abstract Reaction of K 2 S 5 with P 4 S 10 and Ti at 450 °C results in the formation of K 4 Ti 2 P 6 S 25 , a new titanium thiophosphate, whose crystal structure was solved by single-crystal X-ray diffraction. The title compound crystallizes in the orthorhombic space group Fdd2, with the lattice constants a =33.819(7), b =35.508(7), and c =6.251(1) A ( Z =8). The structure contains a layered arrangement of crosslinked quasi-one-dimensional Ti 2 P 6 S 4− 25 chains. The K + ions are situated between the layers. The Ti atoms within the chains are octahedrally coordinated by P 2 S 4− 7 and P 2 S 4− 9 ligands. Reaction of K 2 S with P 4 S 10 , S and Ti at 600 °C results in the formation of K 3 T…
1.65-μm Er:Yb:YAG diode-pumped laser delivering 80-mJ pulse energy
2005
We demonstrate efficient lasing of bulk diode-pumped Er 31 :Yb 31 :YAG at 1.645 mm. The material is transversely pumped using three quasi-cw 960-nm laser diode arrays in a simple arrangement. In the free-running mode of operation, an output pulse energy of 79 mJ is obtained at 4.7 J of incident optical pump energy. The lasing threshold lies in the range 1.0 to 1.9 J in long-pulse operation, depending on pumping conditions, and optical slope efficiencies of 2.2% to 3.4% were measured with respect to the incident pump energy. Furthermore, initial Q-switching experiments with a Co:MALO saturable absorber yielded pulses of 1.7-mJ energy and 340-ns FWHM duration. As the reported laser setup also…
Atomic force microscopy visualization of injuries in Enterococcus faecalis surface caused by Er,Cr:YSGG and diode lasers
2014
Aim: To visualize by Atomic Force Microscopy the alterations induced on Enterococcus. faecalis surface after treatment with 2 types of laser: Erbium chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser and Diode laser. Material and Methods: Bacterial suspensions from overnight cultures of E. faecalis were irradiated during 30 seconds with the laser-lights at 1 W and 2 W of power, leaving one untreated sample as control. Surface alterations on treated E. faecalis were visualized by Atomic Force Microscopy (AFM) and its surface roughness determined. Results: AFM imaging showed that at high potency of laser both cell morphology and surface roughness resulted altered, and that several ce…
Uniform Carbon and Carbon/Cobalt Nanostructures by Solid-State Thermolysis of Polyphenylene Dendrimer/Cobalt Complexes
2005
Benson, J. Am. Chem. Soc. 1962, 84, 3374. b) D. L. Jeanmaire, R. P. van Duyne, J. Am. Chem. Soc. 1976, 98, 4029. c) J. P. Gong, Y. Osada, Appl. Phys. Lett. 1992, 61, 2787. d) S. Liu, Y. Liu, D. Zhu, Thin Solid Films 1996, 280, 271. e) S. Liu, Y. Liu, P. Wu, D. Zhu, H. Tian, K. Chen, Thin Solid Films 1996, 289, 300. f) S. Liu, Y. Liu, P. Wu, D. Zhu, Chem. Mater. 1996, 8, 2779. [6] a) R. S. Potember, T. O. Poehler, D. O. Cowan, F. L. Carter, P. I. Brant, in Molecular Electronic Devices (Ed: F. L. Carter), Marcel Dekker, New York 1982. b) I. Ikemoto, J. M. Thomas, H. Kuroda, Bull. Chem. Soc. Jpn. 1973, 46, 2237. [7] a) A. M. Rao, D. Jacques, R. C. Haddon, W. Zhu, C. Bower, S. Jin, Appl. Phys. …
Regional blood flow in deep structures of the brain measured in acute cat experiments by means of a new beta-sensitive semiconductor needle detector.
1967
Regional cerebral blood flow was measured by means of isotope clearance with a new type of solid state beta-sensitive needle detector (diameter 0.9 mm) introduced into the brain tissue in acute cat experiments. The flow values obtained within the cortex were compared with values recorded above the same cortical region with the same needle detector, or with a small GM-tube. The insertion of the needle detector into the brain tissue gave rise to injury (checked histologically) which deformed the clearance curves in a manner suggesting that the normal circulation had been destroyed within the tissue from which the measurements were made.
Photoluminescence study of excitons in homoepitaxial GaN
2001
High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the ele…