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RESEARCH PRODUCT
Photoluminescence study of excitons in homoepitaxial GaN
Oliver AmbacherC. R. MiskysAndrés CantareroAna CrosMartin StutzmannGema Martínez-criadosubject
Materials sciencePhotoluminescenceIII-V semiconductorsCondensed Matter::OtherExcitonBinding energyGallium compoundsSemiconductor epitaxial layersUNESCO::FÍSICAGeneral Physics and AstronomyElectronGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor epitaxial layers ; Photoluminescence ; Excitons ; Effective massWide band gap semiconductorsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectArrhenius plotCondensed Matter::Materials ScienceEffective mass (solid-state physics):FÍSICA [UNESCO]Effective massExcitonsAtomic physicsIonization energyPhotoluminescenceBiexcitondescription
High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the electron and hole masses have been obtained within the effective mass approximation. Gema.Martinez@uv.es ; Andres.Cantarero@uv.es
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-12-01 |