Search results for "Solid"
showing 10 items of 3575 documents
Characterisation of scheelite LaW0.16Nb0.84O4.08 ion conductor by combined synchrotron techniques: Structure, W oxidation state and interdiffusion
2021
Abstract Scheelite-type materials such as LaNbO4 are increasingly attracting attention as a possible alternative to the most common fluorite and perovskite structure as ion conductors. However, they are much less used and investigated. The introduction of tungsten in lanthanum orthoniobate leads to conduction properties that are compatible with oxygen ion conductivity. In this paper, we studied the effect of the introduction of tungsten in the LaNbO4 structure. High resolution X-ray diffraction showed that in LaNb1-xWxO4+x/2 with x = 0.16 the monoclinic distortion is largely suppressed and the tetragonal phase is predominant at room temperature. By XANES/EXAFS we proved that tungsten is in …
Analysis-oriented stress–strain model of CRFP-confined circular concrete columns with applied preload
2018
The compressive behavior of FRP-confined concrete is a current issue in the field of structural retrofitting. The available models well predict the stress–strain behavior under monotonic and cyclic loads. However, in the practical applications, columns that need an increasing of bearing capacity are often strengthened under serviceability load conditions, with a stress and strain state that could change the response of the reinforced systems with respect to the case of the unloaded state. In this paper, the compressive behavior of circular FRP-confined concrete columns with preload is analyzed with the introduction of a modified analysis-oriented model. Differently from the classical formul…
Characterization of the Solid State Properties of Anodic Oxides on Ta-Nb Alloys as a Function of the Anodizing Conditions
2011
Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited TaxNb(1-x) alloys with 0 ≤ x ≤ 1. A photoelectrochemical investigation was performed in order to estimate the band gap values of the oxides as a function of their composition as well as to estimate their flat band potential. Differential capacitance curves were recorded for all the investigated oxides in a wide range of electrode potential and for several frequencies of the alternative signal. The dependence of C on the applied potential and a.c. frequency was interpreted on the basis of amorphous semiconductor Schottky barrier, and allowed to estimate the dielectric constant of the inv…
Pore structural characteristics, size exclusion properties and column performance of two mesoporous amorphous silicas and their pseudomorphically tra…
2007
Highly ordered mesoporous silicas such as, mobile composition of matter, MCM-41, MCM-48, and the SBA-types of materials have helped to a large extent to understand the formation mechanisms of the pore structure of adsorbents and to improve the methods of pore structural characterization. It still remains an open question whether the high order, the regularity of the pore system, and the narrow pore size distribution of the materials will lead to a substantial benefit when these materials are employed in liquid phase separation processes. MCM-41 type 10 microm beads are synthesized following the route of pseudomorphic transformation of highly porous amorphous silicas. Highly porous silicas a…
Perovskite thin films grown by direct liquid injection MOCVD
2007
Abstract The continuous scaling down of devices dimensions, in silicon technology, imposes to replace silicon dioxide. Among the potential candidates for new capacitors, some perovskite structure materials (such as titanate or zirconate) show interesting characteristics. The first way to develop perovskite films is to use a mixture of two β-diketonates by varying the solution's cationic ratio. However, our previous results on SrZrO3 showed that a wide parametric study had to be carried on. Another way is to design novel heterometallic precursors that contain both cations on the same molecule. The ligands could be chosen so that peculiar evaporation and decomposition temperatures could be ob…
Intrinsic defect formation in amorphousSiO2by electronic excitation: Bond dissociation versus Frenkel mechanisms
2008
Two competing mechanisms of intrinsic defect formation in amorphous ${\text{SiO}}_{2}$ $(a{\text{-SiO}}_{2})$, i.e., the vacancy-interstitial (Frenkel) mechanism and Si-O bond dissociation to form silicon and oxygen dangling bonds, were compared under $\ensuremath{\gamma}$-ray electronic excitation. The Frenkel mechanism was found to be dominant. The concentrations of both kinds of defects strongly correlate with the degree of the structural disorder of $a{\text{-SiO}}_{2}$, providing experimental evidence that both types of intrinsic defect pairs are formed mainly from the strained Si-O-Si bonds. The bond dissociation mechanism is more susceptible to the structural disorder than the vacanc…
Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters
2006
In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…
Cathodoluminescence of crystalline and amorphous SiO2 and GeO2
2001
Abstract Cathodoluminescence (CL) and its temperature-dose behaviour are presented for different crystalline and amorphous modifications of SiO 2 and GeO 2 as well as for Ge-doped SiO 2 layers. The crystalline samples include four-fold coordinated Si and Ge in hexagonal quartz and quartz-like crystals, respectively, as well six-fold coordinated atoms in tetragonal rutile-like crystals. The detected luminescence bands, in general, are attributed to three optical active luminescence centres: the two-fold coordinated silicon (=Si:) and germanium (=Ge:) centre, respectively, the non-bridging oxygen hole centre (NBOHC) and the self trapped exciton (STE). The first ones, the oxygen deficient cent…
Delocalized Nature of theEδ′Center in Amorphous Silicon Dioxide
2005
We report an experimental study by electron paramagnetic resonance (EPR) of E(')(delta) point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E(')(delta) center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.
Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing
2002
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…