Search results for "Surfaces"

showing 10 items of 2837 documents

Individual arc-discharge synthesized multiwalled carbon nanotubes probed with multiple measurement techniques

2020

Arc-discharge synthesized multiwalled carbon nanotubes (AD-MWNT), or related MWNTs, exhibit a good quality compared to the more common type of MWNT synthesized by catalytic chemical vapor deposition methods. Yet experimental measurements on these are rather few and typically have not correlated data from different measurement techniques. Here, the authors report Raman spectroscopy, scanning probe microscopy, conductivity measurements, and force microscopy on single AD-MWNTs. The results demonstrate the high quality of AD-MWNTs and are compatible with the view of them as the best approximation of MWNTs as an assembly of defect-free concentric individual single-walled carbon nanotubes. The au…

Materials sciencescanning probe microscopyCarbon nanotubeConductivitylaw.inventionnanotubesElectric arcsymbols.namesakeScanning probe microscopyraman spectroscopyatomifysiikkalawelectric dischargesMicroscopyMaterials ChemistryElectrical and Electronic EngineeringatomivoimamikroskopiaInstrumentationatomic force microscopyPhysicsProcess Chemistry and TechnologyConductanceSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsChemical engineeringelectronic devicessymbolsscanning tunneling microscopynanoputketRaman spectroscopyEngineering sciences. TechnologyLayer (electronics)scanning electron microscopy
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Enhancement of D 2 /H 2 Selectivity in Zeolite A through Partial Na–K Exchange: Single-Gas and Coadsorption Studies at 45–77 K

2020

International audience; We report D2/H2 adsorption selectivities under cryogenic temperatures (45-77 K) in Na and K-Na exchanged zeolites A (LTA structural code) measured by co-adsorption technique. These values are systematically compared with Ideal Adsorbed Solution Theory (IAST) predictions based on the single gas adsorption isotherms. For NaA zeolite the evolution of the selectivity as a function of total pressure and gas mixture composition at 77 K shows ideal behavior. In contrast, as temperature decreases, D2/H2 selectivity rises exponentially and its values can no longer be predicted by IAST. We found that in these conditions the evolution of the selectivity can be described by a si…

Materials scienceselectivity02 engineering and technologyhydrogen isotope separation010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materials[CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistryquantum sievingGeneral EnergyAdsorption13. Climate actionPhysical chemistryPhysical and Theoretical Chemistry0210 nano-technologySelectivityZeoliteco-adsorption
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Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

2013

Abstract Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R rms values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on ro…

Materials scienceta114Metals and Alloyschemistry.chemical_elementDiamondNanotechnologySurfaces and Interfacesengineering.materialSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidElastic recoil detectionAtomic layer depositionchemistryMaterials ChemistrySurface roughnessengineeringAtomic ratioThin filmComposite materialta116TitaniumThin Solid Films
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Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

2015

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…

Materials scienceta114Scanning electron microscopeAnalytical chemistryNucleationthin film growthCrystal growthSurfaces and InterfacesCondensed Matter PhysicsRutherford backscattering spectrometrySurfaces Coatings and FilmsElastic recoil detectionCrystallinityAtomic layer depositionSurface roughnessta116zinc oxide filmsJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

2012

The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…

Materials scienceta221Analytical chemistryplasma etchingAtomic layer depositionEtch pit densityEtching (microfabrication)SputteringAIN filmsetchingta318Reactive-ion etchingThin filmta216ta116plasma depositionPlasma etchingta213ta114business.industryPhysicsSurfaces and Interfacesatomikerroskasvatusplasma materials processingCondensed Matter PhysicsSurfaces Coatings and Filmsplasmakasvatusthin filmsOptoelectronicsbusinessBuffered oxide etch
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Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…

2014

Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…

Materials scienceta221Residual stressAluminum oxideStress (mechanics)Atomic layer depositionEllipsometryResidual stressHardnessMaterials Chemistryta318Thin filmComposite materialta216ta116Elastic modulusta213ta114Atomic layer depositionMetals and AlloysSurfaces and InterfacesNanoindentationSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsElastic recoil detectionAdhesionElastic modulus
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Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

2008

This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…

Materials sciencetantalum nitrideAnalytical chemistryTantalumchemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsGrain sizeSurfaces Coatings and Filmschemistry.chemical_compoundTantalum nitridechemistryX-ray photoelectron spectroscopyElectrical resistivity and conductivitySputteringXPSMaterials ChemistryAFMThin filmplastic electronicsSIMSSheet resistanceplastic electronics tantalum nitride XPS AFMSIMSSurface and Interface Analysis
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Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays

2010

A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focuses on the determination of the deposition temperature threshold for ZnO Metal-Organic Chemical Vapour Deposition (MOCVD) as well as the concentration of metal-organic silver (Ag) catalyst. Indeed, the optimization of such process parameters allows to tailor the ZnO film morphology in order to make the colloidal lithography/catalyst assisted MOCVD approach a valuable bottom up method to fabricate bi-dimensional ordered ZnO nanohole arrays. (C) 2010 Elsevier B.V. All rights reserved.

Materials sciencezinc oxide; Nanowires and nanohole arrays; Colloidal lithographyMetals and AlloysNanowirezinc oxideNanotechnologyZnO; Catalyst; Nanowires; Nanohole array; Colloidal lithography; MOCVDSurfaces and InterfacesChemical vapor depositionSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCatalysisNanowireNanohole arrayScientific methodProcess integrationMOCVDMaterials ChemistryNanowires and nanohole arraysZnOColloidal lithographyMetalorganic vapour phase epitaxyCatalystThin filmLithography
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Mathematical surfaces models between art and reality

2012

In this paper, I want to document the history of the mathematical surfaces models used for the didactics of pure and applied “High Mathematics” and as art pieces. These models were built between the second half of nineteenth century and the 1930s. I want here also to underline several important links that put in correspondence conception and construction of models with scholars, cultural institutes, specific views of research and didactical studies in mathematical sciences and with the world of the figurative arts furthermore. At the same time the singular beauty of form and colour which the models possessed, aroused the admiration of those entirely ignorant of their mathematical attractions

Mathematical modelsNURBShistoryMathematical models surfaces history NURBSMathematical models; surfaces; history; NURBSsurfaces
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Blown-up toric surfaces with non-polyhedral effective cone

2020

We construct examples of projective toric surfaces whose blow-up at a general point has a non-polyhedral pseudo-effective cone, both in characteristic $0$ and in every prime characteristic $p$. As a consequence, we prove that the pseudo-effective cone of the Grothendieck-Knudsen moduli space $\overline M_{0,n}$ of stable rational curves is not polyhedral for $n\geq 10$ in characteristic $0$ and in characteristic $p$, for all primes $p$. Many of these toric surfaces are related to a very interesting class of arithmetic threefolds that we call arithmetic elliptic pairs of infinite order. Their analysis in characteristic $p$ relies on tools of arithmetic geometry and Galois representations in …

Mathematics - Algebraic GeometryMathematics::Algebraic GeometryMathematics - Number TheoryEffective cones toric surfaces blow up moduli space.Applied MathematicsGeneral MathematicsFOS: MathematicsSettore MAT/03 - GeometriaNumber Theory (math.NT)Algebraic Geometry (math.AG)14C20 14M25 14E30 14H10 14H52
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