Search results for "THIN-FILM"
showing 10 items of 66 documents
Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films
2008
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular st…
Polymeric Thin Films for Organic Electronics: Properties and Adaptive Structures
2013
This review deals with the correlation between morphology, structure and performance of organic electronic devices including thin film transistors and solar cells. In particular, we report on solution processed devices going into the role of the 3D supramolecular organization in determining their electronic properties. A selection of case studies from recent literature are reviewed, relying on solution methods for organic thin-film deposition which allow fine control of the supramolecular aggregation of polymers confined at surfaces in nanoscopic layers. A special focus is given to issues exploiting morphological structures stemming from the intrinsic polymeric dynamic adaptation under non-…
Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
2011
We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency…
The lower rather than higher density charge carrier determines the NH 3 -sensing nature and sensitivity of ambipolar organic semiconductors
2018
International audience; Despite the extensive studies and great application potentials, the sensing nature of ambipolar organic semiconductor gas sensors still remains unclarified, unlike their inorganic counterparts. Herein, different numbers of thiophenoxy groups are introduced into the phthalocyanine periphery of bis(phthalocyaninato) rare earth semiconductors to continuously tune their HOMO and LUMO energies, resulting in the ambipolar M[Pc(SPh)(8)](2) [M = Eu (1), Ho (2)] and p-type M(Pc)[Pc(SPh)(8)] [M = Eu (3), Ho (4)]. An OFET in combination with direct I-V measurements over the devices from the self-assembled nanostructures of 1-4 revealed the original electron and hole densities (…
Optical Fibre NO2 Sensor Based on Lutetium Bisphthalocyanine in a Mesoporous Silica Matrix
2018
International audience; In this article, we describe a NO2 sensor consisting of a coating based on lutetium bisphthalocyanine (LuPc2) in mesoporous silica. The sensor exploits the absorption spectrum change of this material which strongly and reversibly decreases in contact with NO2. NO2 is measured by following the amplitude change in the reflected spectrum of the coating deposited on the tip of a silica fibre. As diffusion of NO2 in LuPc2 is slow, the response time could be slow. To reduce it, the active molecules are dispersed in a mesoporous silica matrix deposited by a sol-gel process (Evaporation Induced Self Assembly) avoiding the formation of large crystals. Doing so, the response i…
Electrochemical fabrication of metal/oxide/conducting polymer junction
2011
After discovery of conducting polymers and the possibility to modify their electrical properties from insulating to metallic like behavior by doping and a careful choice of the processing conditions, a large amount of research effort has been devoted to the theoretical understanding of their solid state properties as well as to exploit the possible application of conducting polymers in many technological fields including large area organic electronics, polymer photovoltaic cell, and sensors. 1-4 Organic thin film transistors appear very promising devices for the development of low cost, flexible, and disposable plastic electronics. In order to reduce the operating voltage it has been sugges…
Recent advances in upscalable wet methods and ink formulations for printed electronics
2014
This review deals with the use of solution processing approaches for organic electronics with a focus on material ink formulations as well as on their applicability. The solution processing techniques include methods like gravure printing, screen printing and ink-jet printing. Basic principles of each approach are understood and fundamental correlations between material (metals, semiconductors, and dielectrics) ink properties and final device performances can be drawn. Nevertheless, solution processing methods have the potential to evolve as the most promising tools in organic device fabrication techniques and have already been applied successfully in the fields of organic thin film transis…
Organic Thin-Film Transistors with Enhanced Sensing Capabilities
2009
Organic thin-film transistors, used as sensing devices, have been attracting quite a considerable interest lately as they offer advantages such as multi parameter behaviour and possibility to be quite easily molecularly tuned for the detection of specific analytes. Here, a study on the dependences of the devices responses on important parameters such as the active layer thickness and its morphology as well as on the transistor channel length is presented. To introduce the least number of variables the system chosen for this study is quite a simple and well assessed one being based on a thiophene oligomer active layer exposed to 1-butanol vapours.
Formation and evolution of self-organized Au nanorings on indium-tin-oxide surface
2011
This work reports on the formation of Au nanoclusters and on their evolution in nanoring structures on indium-tin-oxide surface by sputtering deposition and annealing processes. The quantification of the characteristics of the nanorings (surface density, depth, height, and width) is performed by atomic force microscopy. The possibility to control these characteristics by tuning annealing temperature and time is demonstrated establishing relations which allow to set the process parameters to obtain nanostructures of desired morphological properties for various technological applications. © 2011 American Institute of Physics.
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …