Search results for "TK"

showing 10 items of 6610 documents

Metafory akwatyczne Baumana i Junga : symbolika alchemiczna w myśli nowoczesnej i ponowoczesnej

2017

"merkurialność"globalizmnieświadomośćpłynna nowoczesność"głębokie" i "płytkie" metaforyalchemiczny tygiel
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Józef Wacław Dąbrowski (1797–1862). Wołynianin w armii Królestwa Polskiego

2021

W artykule, w oparciu o nieznane i tym samym niewykorzystywane dotąd przez historyków wspomnienia, przedstawione zostały dzieciństwo i młodość Józefa Wacława Dąbrowskiego, oficera wojska Królestwa Polskiego, dowódcę w randze kapitana i majora oddziałów powstańczych jesienią 1830 – latem 1831 r. Koleje jego losów i kariera wojskowa są tak typowe, jak i odbiegające od znanych i omawianych w literaturze przedmiotu schematów. Typowe, gdyż dzięki wywodzeniu się z kręgów średnio zamożnego ziemiaństwa rozpoczął służbę wojskową od stopnia kadeta, aby przed upływem roku awansować na podchorążego i uzyskać skierowanie do szkoły podchorążych, stanowiącej niezbędny etap służby potrzebny do awansu ofice…

(Congress) Kingdom of Polandpowstanie listopadoweWołyńDąbrowski familyKrólestwo Polskie (kongresowe)Volhyniaarmy of the Kingdom of PolandPolish landed gentry of the 19th centurypolskie ziemiaństwo początku XIX w.Generals of the Kingdom of Polandwojsko Królestwa PolskiegoNovember Uprisingrodzina Dąbrowskichgeneralicja Królestwa PolskiegoEcha Przeszłości
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Superconducting size effect in thin films under electric field: Mean-field self-consistent model

2019

We consider effects of an externally applied electrostatic field on superconductivity, self-consistently within a BCS mean field model, for a clean 3D metal thin film. The electrostatic change in superconducting condensation energy scales as $\mu^{-1}$ close to subband edges as a function of the Fermi energy $\mu$, and follows 3D scaling $\mu^{-2}$ away from them. We discuss nonlinearities beyond gate effect, and contrast results to recent experiments.

---Josephson effectsuprajohtavuusFOS: Physical sciences02 engineering and technology01 natural sciencessuprajohteetSuperconductivity (cond-mat.supr-con)superconducting phase transitionElectric fieldCondensed Matter::Superconductivity0103 physical sciencesThin film010306 general physicsScalingCondensed Matter::Quantum GasesSuperconductivityPhysicsCondensed matter physicsCondensed Matter - SuperconductivityFermi energy021001 nanoscience & nanotechnologyMean field theorythin filmsmesoscopicsohutkalvot0210 nano-technologyEnergy (signal processing)Physical Review B
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Generalised bisection method for optimum ultrasonic ray tracing and focusing in multi-layered structures

2021

Ultrasonic testing has been used for many decades, proving itself very efficient for detecting defects in many industrial sectors. The desire to apply ultrasonic testing to geometrically complex structures, and to anisotropic, inhomogeneous materials, together with the advent of more powerful electronics and software, is constantly pushing the applicability of ultrasonic waves to their limits. General ray tracing models, suitable for calculating the proper incident angle of single element probes and the proper time delay of phased array, are currently required. They can support the development of new imaging techniques, as Full Matrix Capture and Total Focusing Method, and the execution of …

010302 applied physicsAcoustics and UltrasonicsComputer scienceIterative methodbusiness.industryTKComputationUltrasonic testing01 natural sciencesRay tracing (physics)Settore ING-IND/14 - Progettazione Meccanica E Costruzione Di MacchineSoftware0103 physical sciencesBisection methodUltrasonic wave propagation Ray tracing Mathematical modelling Bisection method Multi-layered structures Weld inspection CompositesA priori and a posterioriUltrasonic sensorbusiness010301 acousticsAlgorithmUltrasonics
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Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment

2018

A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …

010302 applied physicsMaterials science010308 nuclear & particles physicsbusiness.industrySchottky diodeLaser01 natural scienceslaw.inventionchemistry.chemical_compoundchemistrylawLogic gate0103 physical sciencesMOSFETSilicon carbideOptoelectronicsCharge carrierPower MOSFETbusinessDiode2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

2019

Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

010302 applied physicsMaterials scienceCondensed matter physicsMechanical EngineeringSchottky barrierSchottky diodeGallium nitride02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicrostructure01 natural sciencesFree standing GaNchemistry.chemical_compoundQuality (physics)chemistryMechanics of MaterialsNi/GaN interface0103 physical sciencesGeneral Materials ScienceBarrier spatial inhomogeneity0210 nano-technologySchottky barrier
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A new 18 GHz room temperature electron cyclotron resonance ion source for highly charged ion beams

2020

An innovative 18 GHz HIISI (Heavy Ion Ion Source Injector) room temperature Electron Cyclotron Resonance (ECR) ion source (ECRIS) has been designed and constructed at the Department of Physics, University of Jyväskylä (JYFL), for the nuclear physics program of the JYFL Accelerator Laboratory. The primary objective of HIISI is to increase the intensities of medium charge states (M/Q ≅ 5) by a factor of 10 in comparison with the JYFL 14 GHz ECRIS and to increase the maximum usable xenon charge state from 35+ to 44+ to serve the space electronics irradiation testing program. HIISI is equipped with a refrigerated permanent magnet hexapole and a noncylindrical plasma chamber to achieve very stro…

010302 applied physicsMaterials scienceIon beamsyklotronittutkimuslaitteetHighly charged ionchemistry.chemical_elementhiukkaskiihdyttimet01 natural sciences7. Clean energyIon sourceElectron cyclotron resonance010305 fluids & plasmasIonXenonchemistry0103 physical sciencesIrradiationAtomic physicsInstrumentationBeam (structure)
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Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

010302 applied physicsMaterials science[PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th]Schottky barriercu(InDopingMetals and Alloys02 engineering and technologySurfaces and InterfacesInterface[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCrystallographyGa)Se 2MoSe2/Mo(110)Lattice (order)0103 physical sciencesMaterials ChemistryThin film solar cellThin-film solar cell0210 nano-technologySchottky barrier
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Charge breeding at GANIL: Improvements, results, and comparison with the other facilities

2019

International audience; The 1+/n+ method, based on an ECRIS charge breeder (CB) originally developed at the LPSC laboratory, is now implemented at GANIL for the production of Radioactive Ion Beams (RIBs). Prior to its installation in the middle of the low energy beam line of the SPIRAL1 facility, the 1+/n+ system CB has been modified based on the experiments performed on the CARIBU Facility at Argone National Laboratory. Later, it has been tested at the 1+/n+ LPSC test bench to validate its operation performances. Charge breeding efficiencies as well as charge breeding times have been measured for noble gases and alkali elements. The commissioning phase started at GANIL in the second half-y…

010302 applied physicsPhysicsTest benchRange (particle radiation)mechanical instrumentstutkimuslaitteetCyclotronThermal ionization01 natural sciences7. Clean energyIon source010305 fluids & plasmaslaw.inventionNuclear physicsion sourcesUpgradeBreeder (animal)Beamlinenuclear physicslawion beam mass spectrometer0103 physical sciences[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]ydinfysiikkaInstrumentation
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ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

2016

Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…

010302 applied physicsTelecomunicacionesMaterials sciencebusiness.industrySchottky diodePhotodetector02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPhotodiodelaw.inventionResponsivityWavelengthSemiconductorlaw0103 physical sciencesOptoelectronicsGrain boundary0210 nano-technologybusinessMolecular beam epitaxy
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