Search results for "TRIP"
showing 10 items of 2134 documents
CCDC 915600: Experimental Crystal Structure Determination
2013
Related Article: Michael Giese, Markus Albrecht, Arto Valkonen, Kari Rissanen|2013|Eur.J.Org.Chem.|2013|3247|doi:10.1002/ejoc.201201704
CCDC 795078: Experimental Crystal Structure Determination
2011
Related Article: M.Muller, M.Albrecht, J.Sackmann, A.Hoffmann, F.Dierkes, A.Valkonen, K.Rissanen|2010|Dalton Trans.|39|11329|doi:10.1039/c0dt00766h
CCDC 1429014: Experimental Crystal Structure Determination
2016
Related Article: Balasubramaniam Arul Prakasam, Anssi Peuronen, Manu Lahtinen, Manickavachagam Muruganandham, Erkki Kolehmainen, Esa Haapaniemi, Mika Sillanpää|2017|Polyhedron|123|453|doi:10.1016/j.poly.2016.11.027
CCDC 1985144: Experimental Crystal Structure Determination
2020
Related Article: Adrien T. Normand, E. Daiann Sosa Carrizo, Corentin Magnoux, Esteban Lobato, Hélène Cattey, Philippe Richard, Stéphane Brandès, Charles H. Devillers, Anthony Romieu, Pierre Le Gendre, Paul Fleurat-Lessard|2021|Chemical Science|12|253|doi:10.1039/D0SC04736H
CCDC 919694: Experimental Crystal Structure Determination
2013
Related Article: L.J.Farrugia, C.Evans, H.M.Senn, M.M.Hanninen, R.Sillanpaa|2012|Organometallics|31|2559|doi:10.1021/om2011744
CCDC 723744: Experimental Crystal Structure Determination
2010
Related Article: A.Gonzalez-Alvarez, I.Alfonso, J.Cano, P.Diaz, V.Gotor, V.Gotor-Fernandez, E.Garcia-Espana, S.Garcia-Granda, H.R.Jimenez, F.Lloret|2009|Angew.Chem.,Int.Ed.|48|6055|doi:10.1002/anie.200901888
Coexistence of superconductivity and spin-splitting fields in superconductor/ferromagnetic insulator bilayers of arbitrary thickness
2021
Ferromagnetic insulators (FI) can induce a strong exchange field in an adjacent superconductor (S) via the magnetic proximity effect. This manifests as spin splitting of the BCS density of states of the superconductor, an important ingredient for numerous superconducting spintronics applications and the realization of Majorana fermions. A crucial parameter that determines the magnitude of the induced spin splitting in FI/S bilayers is the thickness of the S layer d: In very thin samples, the superconductivity is suppressed by the strong magnetism. By contrast, in very thick samples, the spin splitting is absent at distances away from the interface. In this work, we calculate the density of …
An anomalous wave formation at the Al/Cu interface during magnetic pulse welding
2020
This paper reports an anomalous wave formation at an Al/Cu bimetallic interface produced by magnetic pulse welding. The mechanism of the anomalous wave formation is investigated using both metallurgical characterization and the interface kinematics. It reveals that the anomalous wave is formed with the combination of the intermediate zone and the interdiffusion zone with a thickness of 70 nm, wherein the intermediate zone is caused by the local melting due to the high shear instability, and the interdiffusion zone is formed below the melting point of aluminum combined with ultrahigh heating and cooling rates of about 10^13 °C s^−1. A multiphysics simulation of impact welding has been perfor…
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Application of enthalpy model for floating zone silicon crystal growth
2017
Abstract A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4 in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the pol…