Search results for "Thermoelectric effect"
showing 10 items of 147 documents
Effect of anion substitution on the structural and transport properties of argyrodites Cu7PSe6−xSx
2019
Inspired by the good performance of argyrodites as ion conducting thermoelectrics and as solid electrolytes we investigated the effect of isovalent S2- substitution for Se2- in Cu7PSe6. At room temperature Cu7PSe6 crystallizes in the primitive cubic β-polymorph of the argyrodite structure and transforms to the face-centered high-temperature (HT) γ-modification above 320 K. The transition for the homologous Cu7PS6 occurs at 510 K. Promising thermoelectric and ion conducting properties are observed only in the HT modification, where the cations are mobile. Using Rietveld refinements against X-ray diffraction data the effect of isovalent S2- substitution for Se2- on the structural and transpor…
Transversal thermovoltages of (1 1 9) Bi2Sr2CaCu2O8+δ thin films on vicinal (1 1 0) SrTiO3 substrates
1997
Abstract Biaxial textured (1 1 9) oriented Bi 2 Sr 2 CaCu 2 O 8+δ thin films were fabricated by DC-Magnetron sputtering on vicinal (1 1 0) SrTiO 3 substrates. The crystal orientation and stochiometry of the films were obtained from precise X-ray diffraction measurements in four-circle geometry. According to anisotropic transport measurements, the superconducting transition temperature is approximately 47 K and the normal state resistivities along two perpendicular paths differ by a factor of 13.5. Transversal thermoelectric effects were investigated by measuring thermovoltages transverse to temperature gradients parallel to the surface normal induced by pulsed laser irradiation. At room tem…
Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films
2011
Abstract Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr 0.5 Hf 0.5 NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr 0.5 Hf 0.5 NiSn at room temperature were measured to be 63 μV K − 1 , 14.1 μΩ m and 0.28 mW K − 2 m − 1 , respectively. Multilayers of TiNiSn and Zr 0.5 Hf 0.5 NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular …
SPS-assisted preparation of the Magnéli phase WO2.90 for thermoelectric applications
2013
We describe the preparation and simultaneous consolidation of WO2.90 by spark plasma sintering (SPS). SPS allows for the direct manufacturing of large amounts of consolidated material. Synchrotron powder X-ray diffraction indicates that the material is single phase. Microstructure analysis indicates that the pellet is fully dense, allowing high-temperature thermoelectric properties to be reliably measured. The as-prepared samples of WO2.90 reach a ZT of 0.1 at 1100 K.
Short and long range order of Half-Heusler phases in (Ti,Zr,Hf)CoSb thermoelectric compounds
2016
Abstract The structural properties of (Ti,Zr,Hf)CoSb thermoelectric Half-Heusler compounds were investigated by synchrotron radiation based techniques. The short-range order, in particular the environment of the Co atoms, was studied by extended X-Ray absorption fine structure spectroscopy and the long range order by powder X-Ray diffraction. Structural models were obtained for the single phase materials TiCoSb0.85Sn0.15, ZrCoSb0.85Sn0.15, and HfCoSb0.85Sn0.15. These models were transferred for the phase-separated material Ti0.5Hf0.5CoSb0.85Sn0.15. As a result, proving that each Half-Heusler phase was well ordered, apart from the intermixing of Ti and Hf on its designated crystallographic l…
Performance of a thermoelectric module based on n-type (La0.12Sr0.88)0.95TiO3-δ and p-type Ca3Co4-xO9+δ
2020
Here, we present the performance of a thermoelectric (TE) module consisting of n-type (La0.12Sr0.88)0.95TiO3 and p-type Ca3Co4-xO9+δ materials. The main challenge in this investigation was operation of TE module in different atmosphere conditions, since n-type has its optimum TE-performance at reducing, while p-type at oxidizing conditions. The TE module was exposed to two different atmospheres and demonstrated higher stability in N2 atmosphere than in air. The maximum electrical power output decreased after 40 h when the hot side was exposed to N2 at 600 °C, while only 1 h at 400 °C in ambient air was enough to oxidize (La0.12Sr0.88)0.95TiO3 followed by a reduced electrical power output. T…
Phase separation as a key to a thermoelectric high efficiency
2012
This work elucidates the possible reasons for the outstanding, but never reproduced thermoelectric properties of the doped Ti(0.5)Zr(0.25)Hf(0.25)NiSn Heusler compounds. The structural investigations done via synchrotron X-ray diffraction measurements and scanning electron microscope measurements, which clearly show that the microstructure consists of three temperature stable C1(b) phases with possible semi-coherent interfaces, are presented. The exceptional thermoelectric properties are due to this intrinsic phase separation. It is possible to reproduce the high Figure of Merit values with ZT = 1.2 at 830 K. Furthermore, the influence of doping different elements on the Sn position in this…
Influence of a nano phase segregation on the thermoelectric properties of the p-type doped stannite compound Cu(2+x)Zn(1-x)GeSe4.
2012
Engineering nanostructure in bulk thermoelectric materials has recently been established as an effective approach to scatter phonons, reducing the phonon mean free path, without simultaneously decreasing the electron mean free path for an improvement of the performance of thermoelectric materials. Herein the synthesis, phase stability, and thermoelectric properties of the solid solutions Cu_(2+x)Zn_(1–x)GeSe_4 (x = 0–0.1) are reported. The substitution of Zn^(2+) with Cu^+ introduces holes as charge carriers in the system and results in an enhancement of the thermoelectric efficiency. Nano-sized impurities formed via phase segregation at higher dopant contents have been identified and are l…
INFLUENCE OF THE CHEMICAL POTENTIAL ON THE CARRIER EFFECTIVE MASS IN THE THERMOELECTRIC SOLID SOLUTION Cu2Zn1-xFexGeSe4
2013
In this paper, we describe the synthesis and characterization of the solid solution Cu 2 Zn 1-x Fe x GeSe 4. Electronic transport data have been analyzed using a single parabolic band model and have been compared to Cu 2+x Zn 1-x GeSe 4. The effective mass of these undoped, intrinsically hole conducting materials increases linearly with increasing carrier concentration, showing a non-parabolic transport behavior within the valence band.
Influence of Compensating Defect Formation on the Doping Efficiency and Thermoelectric Properties of Cu2-ySe1–xBrx
2015
The superionic conductor Cu_(2−δ)Se has been shown to be a promising thermoelectric at higher temperatures because of very low lattice thermal conductivities, attributed to the liquid-like mobility of copper ions in the superionic phase. In this work, we present the potential of copper selenide to achieve a high figure of merit at room temperature, if the intrinsically high hole carrier concentration can be reduced. Using bromine as a dopant, we show that reducing the charge carrier concentration in Cu_(2−δ)Se is in fact possible. Furthermore, we provide profound insight into the complex defect chemistry of bromine doped Cu_(2−δ)Se via various analytical methods and investigate the conseque…