Search results for "Thin films."

showing 8 items of 148 documents

Nonlinear Absorption and Refraction of Picosecond and Femtosecond Pulses in HgTe Quantum Dot Films

2021

We report measurements of the saturated intensities, saturable absorption, and nonlinear refraction in 70-nm thick films containing 4 nm HgTe quantum dots. We demonstrate strong nonlinear refraction and saturable absorption in the thin films using tunable picosecond and femtosecond pulses. Studies were carried out using tunable laser pulses in the range of 400–1100 nm. A significant variation of the nonlinear refraction along this spectral range was demonstrated. The maximal values of the nonlinear absorption coefficients and nonlinear refractive indices determined within the studied wavelength range were −2.4 × 10−5 cm2 W−1 (in the case of 28 ps, 700 nm probe pulses) and −3 × 10−9 cm2 W−1 …

saturable absorptionQuantum dotsThin filmsGeneral Chemical EngineeringSaturable absorptionPhysics::Opticsquantum dotsquantum dots; mercury telluride; thin films; saturable absorption; nonlinear refraction02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesArticle010309 opticsChemistrythin filmsNonlinear refraction0103 physical sciences:NATURAL SCIENCES [Research Subject Categories]nonlinear refractionGeneral Materials ScienceMercury telluride0210 nano-technologyQD1-999mercury tellurideNanomaterials
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Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"

2017

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…

semiconductor manufacturingThin filmsPatent literature2015 Nano TechnologyHOL - HolstLibrary scienceNanotechnology02 engineering and technologydeposition01 natural sciencesPoster presentationsAtomic layer deposition0103 physical sciencesAtomic layer epitaxy[CHIM]Chemical SciencesReading listPatentsComputingMilieux_MISCELLANEOUSgas-solid reaction010302 applied physicsTS - Technical SciencesIndustrial Innovationinorganic materialPhysicsAtomic layer depositionSilicaSurfaces and InterfacesatomikerroskasvatusAtomic layer021001 nanoscience & nanotechnologyCondensed Matter Physicshistory of technologySurfaces Coatings and FilmsALD0210 nano-technologySoviet unionAtomic layer epitaxial growthEpitaxyJournal of Vacuum Science and Technology A
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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

2020

The suitability of Ti as a band gap modifier for &alpha

solar-blind detectionlaajakaistaiset puolijohteetalloyingBand gaplcsh:Mechanical engineering and machineryAnalytical chemistryCorundum02 engineering and technologyengineering.material7. Clean energy01 natural sciencesArticlegallium oxideCrystallinityAtomic layer depositionpuolijohteet0103 physical scienceslcsh:TJ1-1570Electrical and Electronic EngineeringThin filmQCgallium010302 applied physicsCondensed Matter - Materials Sciencewide band gap semiconductorsMechanical EngineeringWide-bandgap semiconductorPhysics - Applied Physicsatomikerroskasvatus021001 nanoscience & nanotechnologybandgapAmorphous solidthin filmstitaaniControl and Systems Engineeringatomic layer depositiongalliumoksidiengineeringSapphireohutkalvotddc:6200210 nano-technology
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Development of niobium-based superconducting junctions

2012

This thesis presents a review of publications which mainly focuses on the fabrication and performance of Nb-based normal metal-insulator-superconductor (NIS) tunnel junctions and superconductor-normal metal-superconductor (SNS) Josephson junctions at low temperatures. The Cu/AlOx-Al/Nb based NIS double tunnel junctions were successfully fabricated using conventional electron beam lithography combined with multi-angle thermal evaporation of metals in ultra high vacuum. The subgap characteristics of these junctions showed expected temperature dependence from 0.2 K to 5 K with a good thermometry sensitivity 0.2-0.3 mV/K. Signatures of small electronic cooling effects were observed near the Nb …

suprajohtavuusnanofysiikkaSuperconductingThin filmsSuperconducting device fabricationSNS Josephson junctionsmateriaalifysiikkaPulsed laser depositioNanophysicsMaterial physicsNIS tunnel junctionsnanotieteet
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Carbon nanotube derivatives for electro-optical active bulk heterojunctions

2012

thin films solar cells bulk heterojunction carbon nanotubes
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Characterization of structural, optical and electric properties of TiO2 thin films prepared by reactive DC magnetron sputtering.

2007

International audience

thin filmsTiO2sputteringComputingMilieux_MISCELLANEOUS
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Patterning of supported gold monolayers via chemical lift-off lithography

2017

The supported monolayer of Au that accompanies alkanethiolate molecules removed by polymer stamps during chemical lift-off lithography is a scarcely studied hybrid material. We show that these Au–alkanethiolate layers on poly(dimethylsiloxane) (PDMS) are transparent, functional, hybrid interfaces that can be patterned over nanometer, micrometer, and millimeter length scales. Unlike other ultrathin Au films and nanoparticles, lifted-off Au–alkanethiolate thin films lack a measurable optical signature. We therefore devised fabrication, characterization, and simulation strategies by which to interrogate the nanoscale structure, chemical functionality, stoichiometry, and spectral signature of t…

two-dimensional materialMaterials scienceta221General Physics and AstronomyNanoparticlesoft lithographyNanotechnology02 engineering and technology010402 general chemistrylcsh:Chemical technology01 natural scienceslcsh:TechnologySoft lithographyFull Research PaperAnalytical ChemistrynanorakenteetmonolayerMonolayernanostructuresNanotechnologyGeneral Materials Sciencelcsh:TP1-1185Electrical and Electronic EngineeringThin filmlcsh:ScienceLithographyNanoscopic scaleta116chemical patterningta114lcsh:TPDMS stamphybrid material021001 nanoscience & nanotechnologylcsh:QC1-9990104 chemical sciencesNanosciencethin filmslcsh:Qohutkalvot0210 nano-technologyHybrid materialOther Chemical Scienceslcsh:PhysicsBeilstein Journal of Nanotechnology
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Kinetics of phase separation in thin films: Lattice versus continuum models for solid binary mixtures

2008

A description of phase separation kinetics for solid binary (A,B) mixtures in thin film geometry based on the Kawasaki spin-exchange kinetic Ising model is presented in a discrete lattice molecular field formulation. It is shown that the model describes the interplay of wetting layer formation and lateral phase separation, which leads to a characteristic domain size $\ell(t)$ in the directions parallel to the confining walls that grows according to the Lifshitz-Slyozov $t^{1/3}$ law with time $t$ after the quench. Near the critical point of the model, the description is shown to be equivalent to the standard treatments based on Ginzburg-Landau models. Unlike the latter, the present treatmen…

wettingMaterials scienceStatistical Mechanics (cond-mat.stat-mech)Condensed matter physicscritical pointsGinzburg-Landau theoryTime evolutionFOS: Physical sciencesBinary numberfree energyLattice constantthin filmsCritical point (thermodynamics)Lattice (order)Ising modelWettingphase separationThin filmCondensed Matter - Statistical MechanicsWetting layerPhysical Review E
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