Search results for "ToF"

Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition

2021

Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and the hydrogen incorporation at different deposition temperatures from 30 to 200 °C. The total hydrogen concentration in the films was found to increase as the deposition temperature decreased. When the deposition temperature decreased close to room temperature, the main source of impurity in hydrogen changed from 1H to 2H. A sufficiently long purging time changed the main hydrogen isotope incorporated in the film back to 1H. A multiple short pulse scheme was used to study th…

Digitizing data acquisition and time-of-flight pulse processing for ToF-ERDA

2016

A versatile system to capture and analyze signals from multi channel plate (MCP) based time-of-flight detectors and ionization based energy detectors such as silicon diodes and gas ionization chambers (GIC) is introduced. The system is based on commercial digitizers and custom software. It forms a part of a ToF-ERDA spectrometer, which has to be able to detect recoil atoms of many different species and energies. Compared to the currently used analogue electronics the digitizing system provides comparable time-of-flight resolution and improved hydrogen detection efficiency, while allowing the operation of the spectrometer be studied and optimized after the measurement. The hardware, data acq…

Trajectory bending and energy spreading of charged ions in time-of-flight telescopes used for ion beam analysis

2014

Carbon foil time pick-up detectors are widely used in pairs in ion beam applications as time-of-flight detectors. These detectors are suitable for a wide energy range and for all ions but at the lowest energies the tandem effect limits the achievable time of flight and therefore the energy resolution. Tandem effect occurs when an ion passes the first carbon foil of the timing detector and its charge state is changed. As the carbon foil of the first timing detector has often a non-zero voltage the ion can accelerate or decelerate before and after the timing detector. The combination of different charge state properties before and after the carbon foil now induces spread to the measured times…

Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

2011

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…

A simple timestamping data acquisition system for ToF-ERDA

2015

A new data acquisition system, ToF-DAQ, has been developed for a ToF-ERDA telescope and other ToF-E and ToF-ToF measurement systems. ToF-DAQ combines an analogue electronics front-end to asynchronous time stamped data acquisition by means of a FPGA device. Coincidences are sought solely in software based on the timestamps. Timestamping offers more options for data analysis as coincidence events can be built also in offline analysis. The system utilises a National Instruments R-series FPGA device and a Windows PC as a host computer. Both the FPGA code and the host software were developed using the National Instruments LabVIEW graphical programming environment. Up to eight NIM ADCs can be han…

Time-of-flight - Energy spectrometer for elemental depth profiling - Jyväskylä design

2014

Abstract A new time-of-flight elastic recoil detection spectrometer has been built, and initially the main effort was focused in getting good timing resolution and high detection efficiency for light elements. With the ready system, a 154 ps timing resolution was recorded for scattered 4.8 MeV 4 He 2+ ions. The hydrogen detection efficiency was from 80% to 20% for energies from 100 keV to 1 MeV, respectively, and this was achieved by having an additional atomic layer deposited Al 2 O 3 coating on the first timing detector’s carbon foil. The data acquisition system utilizes an FPGA-card to time-stamp every time-of-flight and energy event with 25 ns resolution. The different origins of the ba…

Depth profiling of Al2O3+ TiO2 nanolaminates by means of a time-of-flight energy spectromete

2011

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…

Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors

2022

SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…

Improvement of time-of-flight spectrometer for elastic recoil detection analysis

2013

Determination of Fungi and Multi-Class Mycotoxins in Camelia sinensis and Herbal Teas and Dietary Exposure Assessment

2020

In this paper, a study of fungal and multi-mycotoxin contamination in 140 Camellia sinensis and 26 herbal teas marketed in Latvia is discussed. The analysis was performed using two-dimensional liquid chromatography with time-of-flight mass spectrometry (2D-LC-TOF-MS) and MALDI-TOF-MS. In total, 87% of the tea samples tested positive for 32 fungal species belonging to 17 genera, with the total enumeration of moulds ranging between 1.00 &times