6533b872fe1ef96bd12d2f86
RESEARCH PRODUCT
Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer
Harry J. WhitlowTimo SajavaaraTadashi IshidaTommi SuniTommi SuniBert BrijsKai ArstilaHiroyuki FujitaJaakko JulinMikko RossiMikko LaitinenRiikka L. Puurunensubject
ToF-ERDANuclear and High Energy Physicsdepth profilingMaterials scienceSpectrometerta114business.industryAnalytical chemistryERDIonTotal thicknessElastic recoil detectionTime of flightAtomic layer depositionnanolaminateAl2O3 and TiO2ALDOptoelectronicsThin filmbusinessInstrumentationEnergy (signal processing)description
Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions with energies ranging from 0.5 to 10 MeV, were used and depth profiles of the whole nanolaminate film could be analyzed down to 5 nm individual layer thickness.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-12-01 |