Search results for "Toe"

showing 10 items of 3824 documents

Charge transport mechanism in networks of armchair graphene nanoribbons

2020

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formati…

Materials scienceBand gap530 Physicslcsh:MedicineFOS: Physical sciences02 engineering and technology010402 general chemistry01 natural sciencesArticlelaw.inventionlawMesoscale and Nanoscale Physics (cond-mat.mes-hall)lcsh:ScienceCondensed-matter physicsOhmic contactQuantum tunnellingMultidisciplinaryCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryGraphenelcsh:RTransistorCharge (physics)021001 nanoscience & nanotechnology530 PhysikMaterials science0104 chemical sciencesOptoelectronicslcsh:QCharge carrier0210 nano-technologybusinessGraphene nanoribbons
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Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation

2017

Abstract Gallium selenide is one of the most promising candidates to extend the window of band gap values provided by existing two-dimensional semiconductors deep into the visible potentially reaching the ultraviolet. However, the tunability of its band gap by means of quantum confinement effects is still unknown, probably due to poor nanosheet stability. Here, we demonstrate that the optical band gap band of GaSe nanosheets can be tuned by ∼120 meV from bulk to 8 nm thick. The luminescent response of very thin nanosheets (<8 nm) is strongly quenched due to early oxidation. Oxidation favors the emergence of sharp material nanospikes at the surface attributable to strain relaxation. Simul…

Materials scienceBand gapBioengineering02 engineering and technology010402 general chemistrymedicine.disease_cause01 natural sciencesDesorptionmedicineGeneral Materials ScienceElectrical and Electronic EngineeringNanosheetbusiness.industryMechanical EngineeringRelaxation (NMR)General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesSemiconductorMechanics of MaterialsQuantum dotOptoelectronics0210 nano-technologyLuminescencebusinessUltravioletNanotechnology
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Effect of the precursor's stoichiometry on the optoelectronic properties of methylammonium lead bromide perovskites

2017

International audience; Methylammonium lead bromide (MAPbBr 3) perovskites have been widely studied in applications such as lasers and light-emitting diodes, thanks to their favorable bandgap, efficient charge transport, and the possibility of processing by simple solution methods. The film morphology has a large impact on the optical and electronic properties of the material; hence the deposition methods and the type of precursors used are crucial in the preparation of efficient optoelectronic devices. Here we studied the effect of the precursor´s stoichiometry of solution processed MAPbBr 3 thin films on their optical and electronic properties. We found a drastic effect of the stoichiomet…

Materials scienceBand gapBiophysicsNanoparticleHalide02 engineering and technologyElectroluminescence010402 general chemistry01 natural sciencesBiochemistrylaw.inventionlawThin filmbusiness.industryGeneral ChemistrySemiconductor device[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsAtomic and Molecular Physics and Optics0104 chemical sciencesOptoelectronics0210 nano-technologybusinessStoichiometryLight-emitting diode
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Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells

2011

Abstract The class of half-Heusler compounds opens possibilities to find alternatives for II–VI or III–V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu ( In , Ga ) Se 2 layer…

Materials scienceBand gapChalcopyriteInorganic chemistryMetals and AlloysAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesCopperSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionchemistryX-ray photoelectron spectroscopySputteringlawvisual_artSolar cellMaterials Chemistryvisual_art.visual_art_mediumLithiumLayer (electronics)Thin Solid Films
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Efficient Wide-Bandgap Mixed-Cation and Mixed-Halide Perovskite Solar Cells by Vacuum Deposition

2021

Vacuum deposition methods are increasingly applied to the preparation of perovskite films and devices, in view of the possibility to prepare multilayer structures at low temperature. Vacuum-deposited, wide-bandgap solar cells based on mixed-cation and mixed-anion perovskites have been scarcely reported, due to the challenges associated with the multiple-source processing of perovskite thin films. In this work, we describe a four-source vacuum deposition process to prepare wide-bandgap perovskites of the type FA1-n Cs n Pb(I1-x Br x )3 with a tunable bandgap and controlled morphology, using FAI, CsI, PbI2, and PbBr2 as the precursors. The simultaneous sublimation of PbI2 and PbBr2 allows the…

Materials scienceBand gapEnergy Engineering and Power TechnologyHalide02 engineering and technology010402 general chemistry01 natural sciences7. Clean energyVacuum depositionMaterials ChemistryThin filmCèl·lules fotoelèctriquesPerovskite (structure)Range (particle radiation)Renewable Energy Sustainability and the Environmentbusiness.industryConductivitat elèctrica021001 nanoscience & nanotechnology0104 chemical sciencesFuel TechnologyChemistry (miscellaneous)HomogeneousOptoelectronicsPhotovoltaics and Wind EnergySublimation (phase transition)0210 nano-technologybusinessACS Energy Letters
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Vacuum-Deposited Multication Tin-Lead Perovskite Solar Cells

2020

The use of a combination of tin and lead is the most promising approach to fabricate narrow bandgap metal halide perovskites. This work presents the development of reproducible tin and lead perovskites by vacuum co-deposition of the precursors, a solvent-free technique which can be easily implemented to form complex stacks. Crystallographic and optical characterization reveal the optimal film composition based on cesium and methylammonium monovalent cations. Device optimization makes use of the intrinsically additive nature of vacuum deposition, resulting in solar cells with 8.89% photovoltaic efficiency. The study of the devices by impedance spectroscopy identifies bulk recombination as on…

Materials scienceBand gapEnergy Engineering and Power TechnologyHalidechemistry.chemical_element02 engineering and technology010402 general chemistry01 natural sciences7. Clean energylaw.inventionVacuum depositionlawSolar cellMaterials ChemistryElectrochemistryChemical Engineering (miscellaneous)Electrical and Electronic EngineeringMaterialsCèl·lules fotoelèctriquesPerovskite (structure)business.industryPhotovoltaic system021001 nanoscience & nanotechnology0104 chemical sciencesDielectric spectroscopychemistryOptoelectronics0210 nano-technologybusinessTin
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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

2001

Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…

Materials scienceBand gapExcitonIndium compounds ; III-VI semiconductors ; Semiconductor epitaxial layers ; Electroabsorption ; Excitons ; Minority carriers ; Carrier lifetimeCarrier lifetimeGeneral Physics and Astronomychemistry.chemical_elementIII-VI semiconductorschemistry.chemical_compoundIndium compounds:FÍSICA [UNESCO]SelenideThin filmMinority carriersbusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICACarrier lifetimeCopper indium gallium selenide solar cellschemistryElectroabsorptionOptoelectronicsExcitonsbusinessSingle crystalIndium
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Efficient Perovskite Light-Emitting Diodes: Effect of Composition, Morphology, and Transport Layers

2018

Organic-inorganic metal halide perovskites are emerging as novel materials for light-emitting applications due to their high color purity, band gap tunability, straightforward synthesis, and inexpensive precursors. In this work, we improve the performance of three-dimensional perovskite light-emitting diodes (PeLEDs) by tuning the emissive layer composition and thickness and by using small-molecule transport layers. Additionally, we correlate PeLED efficiencies to the perovskite structure and morphology. The results show that the PeLEDs containing perovskites with an excess of methylammonium bromide (MABr) to lead bromide (PbBr2) in a 2:1 ratio and a layer thickness of 80 nm have the highes…

Materials scienceBand gapHOL - HolstHalide02 engineering and technologyPerovskite010402 general chemistry01 natural scienceslaw.inventionTransport layerslawLight-emitting diodeSurface roughnessGeneral Materials SciencePerovskite (structure)TS - Technical Sciencesbusiness.industryStoichiometric perovskite021001 nanoscience & nanotechnology0104 chemical sciencesNano TechnologyOptoelectronicsQuantum efficiencyCrystallite0210 nano-technologybusinessLayer (electronics)High efficiencyLight-emitting diodeACS Applied Materials & Interfaces
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Structural and Optical Study of Ga3+ Substitution in CuInS2 Nanoparticles Synthesized by a One-Pot Facile Method

2014

A one-pot method was used to synthesize CuInxGa1–xS2 nanoparticles by substituting In3+ with Ga3+. The samples with composition of gallium ranging from 0% to 100% were synthesized by solving copper chloride, indium trichloride, gallium acetylacetonate, and thiourea as precursors in 1-octadecene, oleylamine, and oleic acid as noncoordinating, coordinating, and capping agent solvents, respectively. Depending on the chemical composition and synthesis conditions, the morphology of the as-synthesized nanoparticles obtained was trigonal, semitrigonal, hexagonal, and quasi-spherical. X-ray photoelectron spectroscopy and X-ray diffraction confirmed that Ga3+ substituted In3+ without any segregation…

Materials scienceBand gapInorganic chemistrychemistry.chemical_elementNanoparticleSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry.chemical_compoundGeneral EnergychemistryX-ray photoelectron spectroscopyThioureaOleylaminePhysical and Theoretical ChemistryGalliumCopper chlorideGallium acetylacetonateNuclear chemistryThe Journal of Physical Chemistry C
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Enhancement of the sub-band-gap photoconductivity in ZnO nanowires through surface functionalization with carbon nanodots

2018

We report on the surface functionalization of ZnO nanowire (NW) arrays by attachment of carbon nanodots (C-dots) stabilized by polyethylenimine. The photoconductive properties of the ZnO NWs/C-dots devices were investigated under photoexcitation with photon energies below and above the ZnO band gap. The results indicate an increased photoresponse of the functionalized devices in the visible spectral range, as well as enhanced UV photoconductivity. This is attributed to the fast injection of photoexcited electrons from the C-dots into the conduction band of the ZnO NWs, and the subsequent slower desorption of molecular species from the NW surface, which reduces the surface depletion region i…

Materials scienceBand gapNanowire02 engineering and technology010402 general chemistry01 natural sciencesDepletion regionNanotechnologyPhysical and Theoretical ChemistryPhotocurrentbusiness.industryNanotecnologiaPhotoconductivityNanostructured materials021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPhotoexcitationGeneral EnergyOptoelectronicsSurface modificationCharge carrierMaterials nanoestructurats0210 nano-technologybusiness
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