Search results for "Toe"

Telecom to mid-infrared supercontinuum generation in a silicon germanium waveguide

2015

We report the first demonstration of broadband supercontinuum generation in silicon-germanium waveguides. Upon propagation of ultra-short femtosecond pulses in a 3-cm-long waveguide, the broadening extended from 1.455µm to 2.788µm (at the −30-dB point).

Optical propagation loss measurements in electro optical host-guest waveguides

2013

Thin organic waveguiding layers are applied more and more frequently as optical components in novel optoelectronic devices. For development of such devices it is important to know the optical properties of the used waveguides. One of the most important parameters is optical propagation loss in the waveguide. In this paper we present optical propagation loss measurements in planar electro optical waveguides using travelling fiber method. Using this method attenuation coefficient α at 633 nm as a function of chromophore concentration for the first two guiding modes in the slab waveguide was determined.

Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides

2018

Producción Científica

Chemical characterization of gallium droplets grown by LP-MOCVD.

2006

International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.

Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate

2017

Financial support from the Estonian Research Council (IUT2-25, PUT170, PUT1096, PUT748, PUTJD680), the Estonian Centre of Excellence in Research Projects “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics” TK141 (2014-2020.4.01.15-0011), “Emerging orders in quantum and nanomaterials” TK134 and the Development Fund of the University of Tartu, are all gratefully acknowledged.

Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices

2006

The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.

Changes of lead silicate glasses induced by leaching

1998

Abstract The structural differences in the surface region between freshly fractured and leached silicate glasses containing 16.7, 18.8 and 44.4 mol% PbO, respectively, were investigated by photoelectron spectroscopy (XPS). The optical properties and the thicknesses of leached layers were determined by reflection measurements. The binding energies of the O1s signal components for untreated samples can be ascribed to non-bridging (NBO) and bridging (BO) oxygen and oxygen associated with lead as network former (OPb). The binding energy of OPb was found to be 529.1 ± 0.2 eV. For quantitative conclusions, relative XPS sensitivity factors were determined for oxygen, silicon and lead in these glas…

Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development

2022

This work rationalizes the scalable synthesis of ultrasmall, ligand-free silicon nanomaterials via liquid-phase pulsed laser ablation process using picosecond pulses at ultraviolet wavelengths. Results showed that the irradiation time drives hydrodynamic NP size. Isolated, monodisperse Si-NPs are obtained at high yield (72%) using post-treatment process. The obtained Si-NPs have an average size of 10 nm (not aggregated) and display photoemission in the green spectral range. We directly characterized the ligand-free Si-NPs in a vertebrate animal (zebrafish) and assessed their toxicity during the development. In vivo assay revealed that Si-NPs are found inside in all the early life stages of …

LONG TERM CHARGE RELAXATION IN SILICON SINGLE ELECTRON TRANSISTORS

2001

Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters

2006

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…