Search results for "Toe"
showing 10 items of 3824 documents
Magnetometry of buried layers—Linear magnetic dichroism and spin detection in angular resolved hard X-ray photoelectron spectroscopy
2012
Abstract The electronic properties of buried magnetic nano-layers were studied using the linear magnetic dichroism in the angular distribution of photoemitted Fe, Co, and Mn 2p electrons from a CoFe–Ir78Mn22 multi-layered sample. The buried layers were probed using hard X-ray photoelectron spectroscopy, HAXPES, at the undulator beamline P09 of the 3rd generation storage ring PETRA III. The results demonstrate that this magnetometry technique can be used as a sensitive element specific probe for magnetic properties suitable for application to buried ferromagnetic and antiferromagnetic magnetic materials and multilayered spintronics devices. Using the same instrument, spin-resolved Fe 2p HAXP…
Time-resolved optical absorption in YAlO3 crystals
2004
Abstract The present work is devoted to the investigation of transient absorption (TA) induced by a pulsed electron beam (E=250 keV ) in pure and doped YAlO3 (YAP) single crystals. The nature of centers responsible for TA is discussed.
Recent progress in photoemission microscopy with emphasis on chemical and magnetic sensitivity
1997
Abstract With the improved access to synchrotron radiation sources photoemission electron microscopy is developing into a versatile analytical tool in surface and materials science. The broad spectral range and the well-defined polarization characteristics of synchrotron light permit a unique combination of topographic, chemical, and even magnetic investigations down to a mesoscopic scale. The potentiality of photoemission electron microscopy is demonstrated by several experiments on surfaces and microstructured thin film systems, which have been carried out with a newly designed instrument. We discuss its different modes of operation with respect to both microscopy and spectroscopy. A comb…
NanoESCA: imaging UPS and XPS with high energy resolution
2005
Abstract A novel imaging electron spectrometer has been used for laterally resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) in the soft X-ray range. The instrument is based on a high-resolution emission microscope optics using a cathode lens and an imaging dispersive analyser. The analyser is corrected for the leading aberration term ( α 2 -term) by means of two hemispherical analysers in antisymmetric configuration with an appropriate transfer lens. Small-area spectra as well as energy-filtered images have been taken in the soft X-ray range for a meteorite sample and in the range of the d-band of a Cu polycrystal. An energy resolution of 106 …
Fast elemental mapping and magnetic imaging with high lateral resolution using a novel photoemission microscope
1998
Abstract Using tunable soft X-ray synchrotron radiation and a new-generation photoemission electron microscope with integral sample stage and microarea selector, elemental images and local XANES spectra have been measured. Given the present conditions (PM3 at BESSY), the lateral resolution was in the range of 130 nm with the potential of considerable improvement with high-brilliance sources (a base resolution of 25 nm was obtained in threshold photoemission). Measurements at the oxygen K-edge demonstrate that differences in the local chemical environment of the emitter atom are clearly revealed and can thus be used as a fingerprint technique for its chemical state and geometrical surroundin…
Neutron-induced defects in optical fibers
2014
We present a study on 0.8 MeV neutron-induced defects up to fluences of 1017 n/cm2 in fluorine doped optical fibers by using electron paramagnetic resonance, optical absorption and confocal micro-luminescence techniques. Our results allow to address the microscopic mechanisms leading to the generation of Silica-related point-defects such as E', H(I), POR and NBOH Centers.
Origin of the visible absorption in radiation-resistant optical fibers
2013
In this work we investigated the point defects at the origin of the degradation of radiation-tolerant optical fibers used in the visible part of the spectrum for plasma diagnostics in radiation environments. For this aim, the effects of γ -ray irradiation up to the dose of 10 MGy(SiO2) and post-irradiation thermal annealing at 550◦C were studied for a Fluorinedoped fiber. An absorption peaking around 2 eV is mainly responsible for the measured radiation-induced losses, its origin being currently debated in the literature. On the basis of the unchanging shape of this band with the radiation dose, its correlation with the 1.9 eV photoluminescent band and the thermal treatment results we assig…
Thermally and optically stimulated radiative processes in LiBaF3 crystals
2004
Abstract In LiBaF3 crystals both valence–core transitions (5.4– 6.5 eV ) and so-called self-trapped exciton luminescence (about 4.3 eV ) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF3 crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K . The spectra of thermo-stimulated luminescence (TSL) contain a broad band…
Temperature-dependent angular resolved UV-photoemission spectroscopy from CeNi2Ge2
2001
Abstract Pronounced temperature effects in angular resolved ultraviolet photoelectron spectroscopy from the (001) surface of the ternary heavy fermion compound CeNi 2 Ge 2 are presented. The measurements were performed on atomically clean and well-ordered thin films grown on a W(110) substrate. A strongly enhanced intensity at the Fermi edge ( ϵ F ) is observed at low-temperatures if the spectra are excited by means of HeI light ( hν =21.2 eV). In addition, the work function is dramatically increased with temperature, exhibiting an unusually high positive temperature coefficient of about 0.65 meV/K. The observed temperature dependency suggests a strong redistribution of the states near the …
Luminescence processes induced by UV radiation in A1N nanotips and nanorods
2008
Abstract The processes of the UV radiation induced photoluminescence, thermoluminescence and optically stimulated luminescence in the AlN nanotips and nanorods are studied in comparison with those in the AlN ceramics. The emission spectra of the UV radiation induced luminescence processes in the AlN nanostructures are similar to those of AlN ceramics, presumably originating from recombination processes with participation of the oxygen-related centres. In the nanostructures the luminescence processes occur mainly through the excitation of the host lattice, probably due to the smaller content of the randomly distributed defects in the lattice. The observed small mutual differences in the lumi…