Search results for "Toe"
showing 10 items of 3824 documents
Leakage radiation microscopy of surface plasmon coupled emission: investigation of gain-assisted propagation in an integrated plasmonic waveguide.
2010
International audience; Using a single-mode dielectric-loaded surface plasmon polariton waveguide doped with quantum dots, we were able to slightly increase the propagation length of the mode by stimulated emission of plasmon. We analyse the amplification phenomenon in the visible range by combining leakage radiation microscopy and surface plasmon coupled emission techniques.
Performance of electro-optical plasmonic ring resonators at telecom wavelengths
2012
International audience; In this work we report on the characteristics of an electro-optical dielectric-loaded surface plasmon polariton waveguide ring resonator. By doping the dielectric host matrix with an electro-optical material and designing an appropriate set of planar electrodes, we measured a 16% relative change of transmission upon application of a controlled electric field. We have analyzed the temporal response of the device and conclude that electrostriction of the host matrix is playing a dominating role in the transmission response.
PbS Nanodots Embedded in ZrO2 Thin Films for Ultraviolet Radiation Dosimetry
2011
PbS nanodots embedded in ZrO2 thin film matrix (ZrO2:PbS films) were investigated for UV radiation dosimetry purposes. ZrO2:PbS films were UV irradiated using wavelengths 250 - 400 nm. Photoelectron emission spectra of ZrO2:PbS films were recorded and band structure of the films was calculated. It was found that density of localized states increased with increase in concentration of PbS nanodots which allowed to suggest that PbS nanodots are responsible for creation of localized states. Number of localized states decreased after UV irradiation. The linear correlation between number of localized states and time of UV exposure was observed. Observed changes in band structure of ZrO2:PbS films…
Study of Photo-Induced Thin Film Growth on Cds Substrates.*
1983
ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.
Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
2015
Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 krad with 36 krad/h dose rate. The same electrical parameters were studied subsequently once the irradiated sensors were submitted to an 80 °C annealing process. The studied TMR sensors are applied in a switched-mode power converter for space application.
Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications
2012
The objective of the work was the design of a Wheatstone bridge current sensor using MTJ as magnetoresistive elements. Each one of the four resistances of the bridge consists on 360 MTJ single elements connected in series for improved electrical robustness. A printed circuit board (PCB) was designed with a U-shaped copper trace placed under the PCB maintaining a 1.1 mm separation distance between sensor and trace. A 160% of tunnel magnetoresistance effect in the single junction and a 120% in its corresponding series elements connection has been achieved with a sensitivity of 9.2 Ω/Oe in a 65 Oe linear range. The DC sensor sensitivity in response to an external DC current sweeps of ±10, ±20,…
300°C SiC Blocking Diodes for Solar Array Strings
2009
Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…
High energy, high resolution photoelectron spectroscopy of Co2Mn(1-x)Fe(x)Si
2006
This work reports on high resolution photoelectron spectroscopy for the valence band of Co2Mn(1-x)Fe(x)Si (x=0,0.5,1) excited by photons of about 8 keV energy. The measurements show a good agreement to calculations of the electronic structure using the LDA+U scheme. It is shown that the high energy spectra reveal the bulk electronic structure better compared to low energy XPS spectra. The high resolution measurements of the valence band close to the Fermi energy indicate the existence of the gap in the minority states for all three alloys.
Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
2019
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
Interfacial Modification for High-Efficiency Vapor-Phase-Deposited Perovskite Solar Cells Based on a Metal Oxide Buffer Layer.
2018
Vacuum deposition is one of the most technologically relevant techniques for the fabrication of perovskite solar cells. The most efficient vacuum-based devices rely on doped organic contacts, compromising the long-term stability of the system. Here, we introduce an inorganic electron-transporting material to obtain power conversion efficiencies matching the best performing vacuum-deposited devices, with open-circuit potential close to the thermodynamic limit. We analyze the leakage current reduction and the interfacial recombination improvement upon use of a thin (<10 nm) interlayer of C60, as well as a more favorable band alignment after a bias/ultraviolet light activation process. This wo…