Search results for "Transistor"
showing 10 items of 234 documents
When the Grafting of Double Decker Phthalocyanines on Si(100)-2 × 1 Partly Affects the Molecular Electronic Structure
2016
International audience; A combined X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), and density functional theory (DFT) study has been performed to characterize the adsorbate interaction of lutetium biphthalocyanine (LuPc2) molecules on the Si(100)-2 × 1 surface. Large molecule–substrate adsorption energies are computed and are found to compete with the molecule–molecule interactions of the double decker molecules. A particularly good matching between STM images and computed ones confirms the deformation of the molecule upon the absorption process. The comparison between DFT calculations and XP spectra reveals that the electronic distribution in the two plateaus …
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
2016
An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…
High pentacene transistor performance by engeneering morphology of solution processed thin films
2010
Solution processes for plastic thin film transistors
2009
On the Achievement of High performance thin film transistors by employing 13,6-N-sulfinylacetamido pentacene and printed PEDOT:PSS electrodes
2010
Ionic-electronic interaction in optoelectronic and sensing devices
2016
En este trabajo se estudian las interacciones entre cargas electrónicas e iónicas y sus aplicaciones en sensores y dispositivos optoelectrónicos. El mecanismo de funcionamiento de los dispositivos optoelectrónicos actualmente más comunes, como los transistores de efecto de campo de capa fina (TFTs), los diodos emisores de luz (LEDs) y las células solares se basa solamente en procesos electrónicos, lo que significa que los efectos de cargas iónicas están ausentes, son irrelevantes o incluso perjudiciales para el propósito de dichos dispositivos. Sin embargo, muchas aplicaciones se benefician de la presencia de iones en la estructura de un dispositivo. Un ejemplo típico en el campo de investi…
Optical properties of conductive carbon-based nanomaterials
2016
The interaction of light with carbon nanomaterials is the main focus of this thesis. I explore several nanostructured systems involving different allotropes of carbon, and characterize them both electrically, if applicable, and optically. Special attention is paid to search for plasmon-like excitations on the systems, or utilizing surface plasmons on characterization. The first objective is to achieve control of carbon nanotube (CNT) conductivity with surface plasmon polaritons (SPPs), which resulted in the first CNT field-effect transistor (FET) that can be gated definitively with SPPs. The second objective is the investigation of optical properties of various thin carbon-based molecular n…
Quantum fluctuations in superconducting nanostructures
2014
Modern nanofabrication technology enableTfabrication of very narrow quasi-1-dimensional superconducting nanowires demonstrating finite resistivity within the range of experimentally obtainable temperatures. The observations were reported in ∼10 nm nanowires of certain superconducting materials. The effect has been associated with quantum phase slip process - the particular manifestation of quantum fluctuations of the order p arameter. In titanium, the phenomenon can be observed already at dimensions ∼35 nm where the fabrication is well reproducible and the dimensions of samples can be characterized with high accuracy. We have performed systematic study of the size dependence of transport pr…
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
2023
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
Gold Au(I)6 Clusters with Ligand-Derived Atomic Steric Locking: Multifunctional Optoelectrical Properties and Quantum Coherence
2023
Funding Information: This work was supported by the ERC Advanced grant (DRIVEN, ERC‐2016‐AdG‐742829), the ERC grant (834742), the EU H2020‐MSCA‐RISE‐872049 (IPN‐Bio), the Academy of Finland's Centre of Excellence in Molecular Engineering of Biosynthetic Hybrid Materials Research (HYBER, 2014–2019), and Life‐Inspired Hybrid Materials (LIBER, 346108), Academy of Finland project fundings (No. 352900, 314810, 333982, 336144, 352780, 352930 and 353364), FinnCERES and Photonics Research and Innovation (PREIN) flagship programs. The authors acknowledge the provision of facilities and technical support by Aalto University OtaNano – Nanomicroscopy Center (Aalto‐NMC). | openaire: EC/H2020/834742/EU//…