Search results for "Tunneling"
showing 10 items of 182 documents
Field dependence of the vortex core size probed by scanning tunneling microscopy
2016
We study the spatial distribution of the density of states (DOS) at zero bias N(r) in the mixed state of single and multigap superconductors. We provide an analytic expression for N(r) based on deGennes' relationship between DOS and the order parameter that reproduces well scanning tunneling microscopy (STM) data in several superconducting materials. In the single gap superconductor β-Bi2Pd, we find that N(r) is governed by a length scale ξH=φ0/2πH, which decreases in rising fields. The vortex core size C, defined via the slope of the order parameter at the vortex center, C (dΔ/dr|r→0)-1, differs from ξH by a material dependent numerical factor. The new data on the tunneling conductance and…
Evidence for eight node mixed-symmetry superconductivity in a correlated organic metal
2015
We report a combined theoretical and experimental investigation of the superconducting state in the quasi-two-dimensional organic superconductor $\kappa$-(ET)$_2$Cu[N(CN)$_2$]Br. Applying spin-fluctuation theory to a low-energy material-specific Hamiltonian derived from ab initio density functional theory we calculate the quasiparticle density of states in the superconducting state. We find a distinct three-peak structure that results from a strongly anisotropic mixed-symmetry superconducting gap with eight nodes and twofold rotational symmetry. This theoretical prediction is supported by low-temperature scanning tunneling spectroscopy on in situ cleaved single crystals of $\kappa$-(ET)$_2$…
Investigation of Many‐Body Effects in the Quasi‐Two‐Dimensional Electronic System of Organic Charge‐Transfer Salts
2019
Morphology and electronic structure of bcc Co(110) and fcc/hcp Co(111) on Fe(110) investigated by STM and STS
2009
Abstract We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI / dU spec…
Enhanced CDW Transitions in Nb3X4(X = S, Se, Te): Intercalation and Surface Effects
2004
A x Nb 3 X 4 (A = In, Tl, ZnHg; X = S, Se, Te) compounds show CDW instabilities dependent on the type and concentration of intercalate. Tl or In intercalation flattens the Fermi surfaces and supports CDW formation. In the corresponding DOS spectrum the Fermi level is shifted towards coincidence with a small peak, derived mainly from the Nb dz 2 orbital. Localized modulated regions observed in STM images of Nb 3 X 4 at room temperature represent precursor effects to full CDW formation.
Rashba splitting of the Tamm surface state on Re(0001) observed by spin-resolved photoemission and scanning tunneling spectroscopy
2020
Physical review research 2(1), 013296 (2020). doi:10.1103/PhysRevResearch.2.013296
Competition between surface reaction and diffusion of gold deposited onto ZrTe3
2003
Abstract Surface reaction and diffusion of gold, deposited onto the (0 0 1) ZrTe 3 van der Waals (vdW) surface, is studied by transmission electron and scanning tunneling microscopy. It is shown that both processes compete at temperatures as low as room temperature. In case of diffusion the deposited gold mostly disappears from the surface and intercalates into the vdW gaps of the substrate. Residual unreacted gold agglomerates are rather mobile and are often displaced by the scanning tip along the [1 0 0] direction of the substrate. In case of reaction, which usually takes place at somewhat higher substrate temperatures, grains of Zr 3 Te 2 , AuTe 2 and/or Au 2 Te 3 are formed. Contrary to…
Oxide growth and tunneling characteristics of Sn-SnO x -Sn junctions
1979
Sn—SnOx—Sn tunneling junctions were prepared by thermal oxidation of vacuum deposited Sn-films. The thickness growth of the oxide was followed by ellipsometric measurements. From logarithmic conductivity measurements the barrier heights were determined. The tunneling characteristic could be well described by the two-band-tunneling model using a value of 0.14 for the ratio of the effective masses in the oxide and the metal.
Photon Scanning Tunneling Microscopy and Reflection Scanning Microscopy
1991
The Photon Scanning Tunneling Microscope (PSTM) is the photon analogue to the Electron Scanning Tunneling Microscope (ESTM). It uses the evanescent field due to the total internal reflection (TIR) of a light beam in a prism modulated by a sample attached to the prism. The exponential decay of the evanescent field is characterized by the penetration depth dp and depends on the angle of incidence θ, the wavelength and polarization of the incident beam. Changes in intensity are monitored by a probe tip scanned over the surface, and the data are processed to generate an image of the sample. Images produced by a prototype instrument are shown to have a vertical resolution of about 3 A and a late…
Sample–tip coupling efficiencies of the photon-scanning tunneling microscope
1991
The photon-scanning tunneling microscope is the photon analog to the electron-scanning tunneling microscope. It uses the evanescent field due to the total internal reflection of a light beam in a prism, modulated by a sample attached to the prism. The exponential decay of the evanescent field is characterized by the penetration depth dp and depends on the angle of incidence θ, the wavelength, and the polarization of the incident beam. The 1/e decay lengths range from 150 to 265 nm as deduced from the expression of the electric-field intensity in the rarer medium for θ = π/2. If we place another optically transparent medium near the surface, frustrated total reflection occurs. It is shown th…