Search results for "Tunnelling"

showing 10 items of 218 documents

Incorporation of CrIII into a Keggin Polyoxometalate as a Chemical Strategy to Stabilize a Labile {CrIIIO4} Tetrahedral Conformation and Promote Unat…

2020

Polyoxometalates (POMs) provide rigid and highly symmetric coordination sites and can be used as a strategy for the stabilization of magnetic ions. Herein, we report a new member of the Keggin archetype, the Cr-centered Keggin anion [α-CrW12O40]5– (CrW12), with the unusual tetrahedral coordination of CrIII reported for the first time in POMs conferring unattended magnetic properties. POM chemistry has recently presented excellent examples of single-molecule and single-ion magnets (SMMs and SIMs) as well as molecular spin qubits; however, the majority of POM-based SIMs reported to date contain lanthanoid ions. CrW12, as the first example of a chromium(III) SIM, exhibits slow relaxation of ma…

LanthanideChemistryCommunicationRelaxation (NMR)chemistry.chemical_elementGeneral Chemistry010402 general chemistry01 natural sciencesBiochemistryCatalysis0104 chemical sciencesIonCrystallographyMagnetizationChromiumColloid and Surface ChemistryMagnetPolyoxometalateQuantum tunnellingJournal of the American Chemical Society
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Tunneling luminescence in long lasting afterglow of SrAl 2 O 4 :Eu,Dy

2017

The publication is prepared with the financial support of National Research Programme IMIS2.

Long lastingLuminescenceKineticsBiophysicsLuminescence spectra02 engineering and technologyElectron010402 general chemistryPhotochemistry01 natural sciencesBiochemistryRare earth:NATURAL SCIENCES:Physics [Research Subject Categories]Quantum tunnellingLong afterglowChemistryGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsAtomic and Molecular Physics and Optics0104 chemical sciencesAfterglowExcited stateAtomic physics0210 nano-technologyLuminescenceJournal of Luminescence
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Quantum Tunneling of Magnetization under Pressure in the High-Spin Mn12 Molecular System

2004

Experimental and theoretical investigations of quantum tunneling magnetization in the high-spin cluster [Mn 1 2 O 1 2 (CH 3 COO) 1 6 (H 2 O) 4 ].2CH 3 COOH.4H 2 O under pressure have been performed. The main observation is that the blocking temperature and hysteresis width decrease under the effect of pressure. However, the position of the steps in the magnetization versus field curve does not change noticeably as pressure increases. A theoretical examination of the pressure influence on the relaxation rate and magnetization has been carried out taking into consideration the quantum tunneling effects. The qualitative agreement between theory and experiment has been achieved both at atmosphe…

MagnetizationHysteresisField (physics)Condensed matter physicsRelaxation rateChemistryMaterials ChemistryCluster (physics)Physical and Theoretical ChemistryAnisotropyQuantum tunnellingSurfaces Coatings and FilmsSpin-½The Journal of Physical Chemistry B
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Spin-Polarized Scanning Tunnelling Microscopy of Ultrathin Films

2006

Using low temperature spin-polarized scanning tunneling microscopy we have studied the morphology and magnetic properties of ultrathin Fe(0.5 ML)Au(0.5 ML) nanowires prepared on a Mo(110) single crystal. The Fe nanostripes grown by step flow on a Mo(110) at 700 K were covered by Au at RT, and subsequently annealed at 700 K. Differences in the morphology of Au on Fe(110)/Mo(110) and clean Mo(110) surfaces are observed and discussed. After annealing, the Mo is covered by a homogeneous FeAu ML alloy with several iron enriched islands which reveal an out-of-plane magnetic contrast. Direct lateral exchange coupling has been observed for these islands.

Materials scienceAnnealing (metallurgy)AlloyAnalytical chemistryNanowireGeneral Physics and Astronomyengineering.materiallaw.inventionHomogeneouslawMicroscopyengineeringScanning tunneling microscopeSingle crystalQuantum tunnellingActa Physica Polonica A
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Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

2016

In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing …

Materials scienceAnnealing (metallurgy)General Physics and Astronomychemistry.chemical_element02 engineering and technologyManganese01 natural sciencesAluminiumElectrical resistivity and conductivitysuperconducting tunnel junctions0103 physical sciences010306 general physicsQuantum tunnellingSuperconductivityta114Condensed matter physicsDopingMetallurgy021001 nanoscience & nanotechnologylcsh:QC1-999Amorphous solidtunnel junctionschemistrysuperconducting metals0210 nano-technologylcsh:PhysicsAIP Advances
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Thermally Stimulated Ionic and Electronic Processes and Radiation-Induced Defect Annealing in LiBaF3 Crystals

2000

The electronic, ionic and ion-diffusion controlled thermally stimulated relaxation (TSR) processes in X-ray irradiated (at 80 K or 290 K) nominally pure LiBaF3 fluoroperovskite crystals have been investigated in the 90–550 K range by means of the ionic conductivity, ionic thermally stimulated depolarization current (TSDC), as well as the thermally stimulated current (TSC), thermally stimulated luminescence (TSL) and the X-ray induced optical absorption spectra thermal bleaching techniques. The role of the thermoactivated ionic and ionic-electronic processes in the TSR (thermal bleaching, TSC and TSL) of X-ray irradiated crystals is studied above 250 K. The TSL efficiency (ratio TSL/TSC) ver…

Materials scienceAnnealing (metallurgy)Radiative transferAnalytical chemistryIonic conductivityIonic bondingIrradiationElectronLuminescenceQuantum tunnelling
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Charge transport mechanism in networks of armchair graphene nanoribbons

2020

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formati…

Materials scienceBand gap530 Physicslcsh:MedicineFOS: Physical sciences02 engineering and technology010402 general chemistry01 natural sciencesArticlelaw.inventionlawMesoscale and Nanoscale Physics (cond-mat.mes-hall)lcsh:ScienceCondensed-matter physicsOhmic contactQuantum tunnellingMultidisciplinaryCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryGraphenelcsh:RTransistorCharge (physics)021001 nanoscience & nanotechnology530 PhysikMaterials science0104 chemical sciencesOptoelectronicslcsh:QCharge carrier0210 nano-technologybusinessGraphene nanoribbons
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Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing

2010

We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated samples demonstrated a significant reduction in the 1/f noise level. Temperature dependence of the noise was studied between 4.2 and 340 Kelvin, with a linear dependence below 100 K, but a faster increase above. The results are consistent with a model where the density of charge trapping two level-systems within the tunneling barrier is reduced by the annealing process.

Materials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsPhysics and Astronomy (miscellaneous)Condensed matter physicsAnnealing (metallurgy)Ultra-high vacuumchemistry.chemical_elementFOS: Physical sciences02 engineering and technologyTrappingLow frequency021001 nanoscience & nanotechnology01 natural scienceschemistryAluminiumCondensed Matter::Superconductivity0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Vacuum chamber010306 general physics0210 nano-technologyQuantum tunnellingOrder of magnitude
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Thermal irreversibility in optically labeled low-temperature glasses.

1989

We present an investigation of irreversible features of thermal broadening of persistent spectral holes. The investigation is based on temperature-cycling hole-burning experiments performed with a variety of organic glasses doped with rather different probe molecules. The results show a rich temperature dependence. They can, however, be interpreted in terms of the well-known spectral diffusion models, in which we introduced a freezing condition to account for thermal irreversiblity. There is a tunneling regime for low temperatures and an activated regime for high temperatures. In the tunneling regime the broadening is linear in T; in the activated regime it increases with ${T}^{3/2}$ and lo…

Materials scienceCondensed matter physicsDiffusionDopingThermalMoleculeQuantum tunnellingPhysical review. B, Condensed matter
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Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge)

2008

Spintronic is a multidisciplinary field and a new research area. New materials must be found for satisfying the different types of demands. The search for stable half-metallic ferromagnets and ferromagnetic semiconductors with Curie temperatures higher than room temperature is still a challenge for solid state scientists. A general understanding of how structures are related to properties is a necessary prerequisite for material design. Computational simulations are an important tool for a rational design of new materials. The new developments in this new field are reported from the point of view of material scientists. The development of magnetic Heusler compounds specifically designed as …

Materials scienceCondensed matter physicsFerromagnetismSpin polarizationSpintronicsMagnetengineeringCurieGeneral Materials ScienceElectronic structureengineering.materialHeusler compoundQuantum tunnellingScience and Technology of Advanced Materials
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