Search results for "VOLTAGE"
showing 10 items of 934 documents
Space charge behavior of different insulating materials employed in AC and DC cable systems
2017
In this work, the space charge accumulation in three different XLPE based material has been carried out by using the PEA (Pulsed Electro-Acoustic) method. The specimens provided by a cables industry have been subjected to the same DC stress during polarization time at environment temperature. Afterwards, the high voltage generator has been turned off and the amount residual charge has been evaluated. The space charge profiles during polarization and depolarization have been carried out and compared. Finally, the distribution of electric field within the samples has been reported. In particular, the maximum distortion of electric field has been calculated by taking into account the distribut…
Determination of Contact Potential Difference by the Kelvin Probe (Part II) 2. Measurement System by Involving the Composite Bucking Voltage
2016
Abstract The present research is devoted to creation of a new low-cost miniaturised measurement system for determination of potential difference in real time and with high measurement resolution. Furthermore, using the electrode of the reference probe, Kelvin method leads to both an indirect measurement of electronic work function or contact potential of the sample and measurement of a surface potential for insulator type samples. The bucking voltage in this system is composite and comprises a periodically variable component. The necessary steps for development of signal processing and tracking are described in detail.
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
Contributed Review: Review of thermal methods for space charge measurement.
2016
The space charge accumulation phenomenon has garnered great interest over the last two decades because of the increased use of direct current in high voltage electrical systems. In this context, a significant relevance has been achieved by the thermal methods, used for solid dielectrics. This paper presents a review of this non-destructive measurement system used for the measurement of space charge. The thermal pulse method, the thermal step method, and the laser intensity modulation method are described. For each configuration, the principle of operation, the thicknesses analyzed, and the spatial resolution are described, reporting also the main related applications
ABSOLUTE THERMOELECTRIC POWER OF Pb–Sn ALLOYS
2011
International audience; In this work, absolute thermoelectric power (ATP) of Pb, Sn, Pb-20 wt.% Sn, Pb-40 wt.% Sn, Pb-60 wt.% Sn, Pb-80 wt.% Sn are measured. Measurements are performed in a temperature gradient furnace from 20 degrees C to 500 degrees C, for both solid and liquid states. Temperatures are measured with T-type copper-constantan thermocouples, while voltage signal between copper electrodes of those thermocouples is recorded in order to calculate ATP of the sample metal.
Space Charge Measurement under DC and DC Periodic Waveform
2018
In High Voltage systems, Partial Discharges (PDs) monitoring are one of the main diagnostic instrument to evaluate the reliability of the apparatus. Under Alternating Current (AC) stress, PDs detection and recognition techniques are well consolidated. On the contrary, the monitoring of PDs under Direct Current (DC) stress is difficult due to complexities related to the nature of the phenomenon, which cause the beginning of PDs events in proximity of the dielectric breakdown. This problem has been partially overcome by using a continuous Periodic waveform (DCP) with positive average value, as described in a recent published work. Under DC stress, another degradation factor is the Space Charg…
Operating a cesium sputter source in a pulsed mode
2020
A scheme is presented for pulsing of a cesium sputter negative ion source by periodically switching on and off the high voltage driving the sputtering process. We demonstrate how the pulsed ion beam can be used in combination with a pulsed laser (6 ns pulse length) that has a 10 Hz repetition rate to study the photodetachment process, where a negative ion is neutralized due to the absorption of a photon. In such experiments, where the ion beam is used only for a small fraction of the time, we show that the pulsed mode operation can increase the lifetime of a cathode by two orders of magnitude as compared with DC operation. We also investigate how the peak ion current compares with the ion c…
Dielectric breakdown of fast switching LCD shutters
2017
Fast liquid crystal optical shutters due to fast switching, vibrationless control and optical properties have found various applications: substitutes for mechanical shutters, 3D active shutter glasses, 3D volumetric displays and more. Switching speed depends not only on properties of liquid crystal, but also on applied electric field intensity. Applied field in the shutters can exceed >10 V/micron which may lead to dielectric breakdown. Therefore, a dielectric thin film is needed between transparent conductive electrodes in order to reduce breakdown probability. In this work we have compared electrical and optical properties of liquid crystal displays with dielectric thin films with thickne…
Performance evaluation and stability of silicide-based thermoelectric modules
2020
Abstract Long-term studies on thermoelectric generators based on N-type magnesium silicide (Mg2.01Si0.49Sn0.5Sb0.01) and P-type higher manganese silicide (Mn0.98Mo0.02Si1.73Ge0.02) materials are presented, in the operating temperature range of 200 °C–400 °C. Emphasis is put on the performance and reliability of the current collector configuration, especially on the hot side of the module, and on the thermomechanical stresses that are created during operation and lifetime testing as a result of large temperature gradients experienced across the thermoelectric legs. With silver (Ag) paste as contact material, the long term-stability of the uni-couples was carried out on non-metalized legs and…
How Gettering Affects the Temperature Sensitivity of the Implied Open Circuit Voltage of Multicrystalline Silicon Wafers
2019
The temperature sensitivity of the open circuit voltage of a solar cell is mainly driven by changes in the intrinsic carrier concentration, but also by the temperature dependence of the limiting recombination mechanisms in the cell. This paper investigates the influence of recombination through metallic impurities on the temperature sensitivity of multicrystalline silicon wafers. Spatially resolved temperature dependent analysis is performed to evaluate the temperature sensitivity of wafers from different brick positions before and after being subjected to phosphorus diffusion gettering. Local spatial analysis is performed on intra-grain areas, dislocation clusters and grain boundaries. Lar…