Search results for "Volt"

Plasmonic nanostructures for light trapping in thin-film solar cells

2019

Abstract The optical properties of localized surface plasmon resonances (LSPR) sustained by self-assembled silver nanoparticles are of great interest for enhancing light trapping in thin film photovoltaics. First, we report on a systematic investigation of the structural and the optical properties of silver nanostructures fabricated by a solid-state dewetting process on various substrates. Our study allows to identify fabrication conditions in which circular, uniformly spaced nanoparticles are obtainable. The optimized NPs are then integrated into plasmonic back reflector (PBR) structures. Second, we demonstrate a novel procedure, involving a combination of opto-electronic spectroscopic tec…

Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group

2021

In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.

Charging in Solitary, Voltage Biased Tunnel Junctions.

1996

Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film.

2014

We investigate charge transport in a chemically reduced graphene oxide (RGO) film of sub-micron thickness. The I-V curve of RGO film shows current switching of the order of ∼10(5) above the threshold voltage. We found that the observed I-V curve is consistent with quantum tunnelling based charge transport. The quantum tunnelling based Simmons generalized theory was used to interpret the charge transport mechanism which shows that the current switching phenomenon is associated with transition from direct to Fowler-Nordheim (F-N) tunneling. The absence of current switching in the I-V curve after stripping away the oxygen functional groups from chemically RGO film confirms that the presence of…

Primary thermometry with nanoscale tunnel junctions

1995

We have found current-voltage (I-V) and conductance (dI/dV) characteristics of arrays of nanoscale tunnel junctions between normal metal electrodes to exhibit suitable features for primary thermometry. The current through a uniform array depends on the ratio of the thermal energy kBT and the electrostatic charging energy E c of the islands between the junctions and is completely blocked by Coulomb repulsion at T = 0 and at small voltages eV/2 ≤ Ec. In the opposite limit, kBT ≫ Ec, the width of the conductance minimum scales linearly and universally with T and N, the number of tunnel junctions, and qualifies as a primary thermometer. The zero bias drop in the conductance is proportional to T…

An analog electronic interface to measure electrical conductivity in liquids

2005

Abstract Measuring conductivity in aqueous solutions is a problem which is not easy to solve due to the differences in mass and mobility that exist between ions conduction and electrons. Additionally, it is necessary to keep in mind the interaction processes electrode-solution. As a consequence, the electrolytic conductivity cell has to be polarized with alternating voltage of adequate amplitude and frequency in order to extract the correct information. In this paper an electronic conditioning circuit is presented which converts electric conductivity into a value of continuous voltage. A hardware solution is proposed to do the conductivity temperature compensation. Experimental results obta…

Dynamic response of thin-film semiconductors to AC voltage perturbations

2012

A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…

Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions

2011

Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…

Proposal for a Dual Spin Filter Based on [VO(C 3 S 4 O) 2 ] 2–

2018

Polynuclear magnetic molecules often present dense electronic transmission spectra with many overlapping conduction spin channels. Single-metal complexes display a sparser density of states, which in the presence of a fixed external magnetic field makes them interesting candidates for spin filtering. Here we perform a DFT study of a family of bis- and tris-dithiolate vanadium complexes sandwiched between Au(111) electrodes and demonstrate that [VO(C3S4O)2]2– can behave as a dual spin filter. This means that an external electrical stimulus can switch between the selective transmission of spin-up and spin-down carriers. By using an electrostatic gate, we show that the onset for the spin-up co…

High voltage vacuum-processed perovskite solar cells with organic semiconducting interlayers

2020

In perovskite solar cells, the choice of appropriate transport layers and electrodes is of great importance to guarantee efficient charge transport and collection, minimizing recombination losses. The possibility to sequentially process multiple layers by vacuum methods offers a tool to explore the effects of different materials and their combinations on the performance of optoelectronic devices. In this work, the effect of introducing interlayers and altering the electrode work function has been evaluated in fully vacuum-deposited perovskite solar cells. We compared the performance of solar cells employing common electron buffer layers such as bathocuproine (BCP), with other injection mate…