Search results for "Wire"

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

2015

We experimentally investigate the influence of AlN buffer growth on the nucleation and the polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two complementary growth mechanisms for AlN buffer deposited on Si are demonstrated. Both emphasize the aggregation of Si on the AlN surface and the growth of large cubic crystallites, namely, AlN pedestals. Further growths of GaN NWs assembly reveal that the GaN 2D layer found at the bottom of the NW assembly is the result of the coalescence of Ga-polar pyramids, whereas AlN pedestals are observed as preferential but not exclusive NW nucleation sites. NWs are N-polar or exhibit inversion domains with a Ga-polar core/N-polar she…

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

2013

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

2012

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrodinger equation for a cylindrical nanowire of infinite length, a…

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

2019

International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…

Mechanical characterisation of pentagonal gold nanowires in three different test configurations: A comparative study.

2019

Abstract Mechanical characterisation of individual nanostructures is a challenging task and can greatly benefit from the utilisation of several alternative approaches to increase the reliability of results. In the present work, we have measured and compared the elastic modulus of five-fold twinned gold nanowires (NWs) with atomic force microscopy (AFM) indentation in three different test configurations: three-point bending with fixed ends, three-point bending with free ends and cantilevered-beam bending. The free-ends condition was realized by introducing a novel approach where the NW is placed diagonally inside an inverted pyramid chemically etched in a silicon wafer. In addition, all thre…

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

2011

Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…

Partial discharge detection and localization along medium voltage cables

2017

In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.

Critical issues in the PD testing methodology for XLPE-insulated MV cables: An experimental case

2017

This paper describes some critical issues arising during the partial discharge (PD) testing of a 500m delivery length of an XLPE-insulated MV cable. At first, conventional PD measurements were performed on the whole length by using a standard acquisition system; PDs activity was detected, but the system allowed the operator to localize the PDs only on a length of 70 m. A visual inspection of this section highlighted the presence of an excoriation in the outer sheet. Aiming at a more accurate pin-pointing of the defect, more measurements were carried out in the proximity of the outer defect using a portable PD detection system. These measurements showed PDs activity, whose source was located…

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits

2016

Phase change materials (PCMs) are highly attractive for nonvolatile electrical and all-optical memory applications because of unique features such as ultrafast and reversible phase transitions, long-term endurance, and high scalability to nanoscale dimensions. Understanding their transient characteristics upon phase transition in both the electrical and the optical domains is essential for using PCMs in future multifunctional optoelectronic circuits. Here, we use a PCM nanowire embedded into a nanophotonic circuit to study switching dynamics in mixed-mode operation. Evanescent coupling between light traveling along waveguides and a phase-change nanowire enables reversible phase transition b…

Luminescence dynamics of hybrid ZnO nanowire/CdSe quantum dot structures

2016

Colloidal CdSe quantum dots (QDs) functionalized with different organic linker molecules are attached to ZnO nanowires (NWs) to investigate the electron transfer dynamics between dots and wires. After linking the quantum dots to the nanowires, the photo-induced electron transfer (PET) from the QDs into the NWs becomes visible in the PL transients by a decrease of dot luminescence decay time. The different recombination paths inside the QDs and the PET process are discussed in the framework of a rate equation model. Photoconductivity studies confirm the electron transfer by demonstrating a strong enhancement of the wire photocurrent under light irradiation into the dot transition. (© 2016 WI…