Search results for "aRR"
showing 10 items of 10185 documents
Plastic yielding of glass in high-pressure torsion apparatus
2018
International audience; Hardness measurements performed at room temperature have demonstrated that glass can flow under elevated pressure, whereas the effect of high pressure on glass rheology remains poorly quantified. Here, we applied a high-pressure torsion (HPT) apparatus to deform SCHOTT SF6 â glass and attempted to quantify the effect of pressure and temperature on the shear deformation of glass subjected to pressures from 0.3 GPa to 7 GPa and temperatures from 25 ℃ to 496 ℃. Results show that the plastic yield deformation was occurring during the HPT experiments on the SF6 glass at elevated temperature from 350 ℃ to 496 ℃. The yield stress of SF6 glass decreases with increasing tempe…
FPGA based digital lock-in amplifier for fNIRS systems
2018
Lock-In Amplifiers (LIA) represent a powerful technique helping to improve signals detectability when low signal to noise ratios are experienced. Continuous Wave functional Near Infrared Spectroscopy (CW-fNIRS) systems for e-health applications usually suffer of poor detection due to the presence of strong attenuations of the optical recovering path and therefore small signals are severely dipped in a high noise floor. In this work a digital LIA system, implemented on a Zynq® Field Programmable Gate Array (FPGA), has been designed and tested to verify the quality of the developed solution, when applied in fNIRS systems. Experimental results have shown the goodness of the proposed solutions.
RBS and ERD cross-sections and optical model parameters for the analysis of lithium, boron and nickel
2000
Abstract Elastic scattering cross-sections for RBS analysis of nickel by 7 Li and 11 B ion backscattering near the Coulomb barrier have been determined. The lithium ion measurements were performed in the energy range of 8–15 MeV at the laboratory angles of 115° and 135°. For boron ions the energies between 14 and 24 MeV and scattering angles of 89°, 110° and 130° were used. For the analysis of lithium and boron by ERD the scattering cross-sections have been calculated by kinematically reversing the backscattering process. The calculated 58 Ni ion energies thus varied between 65 and 125 MeV for lithium and between 75 and 130 MeV for boron recoils. For the Li + Ni and B + Ni systems the thres…
Photo-electrical and transport properties of hydrothermal ZnO
2016
We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to VZn, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm2/s) at low excitations and temperatures up to 800 K was attributed to impact the rec…
Enabling partially reconfigurable IP cores parameterisation and integration using MARTE and IP-XACT
2012
International audience; This paper presents a framework which facilitates the parameterization and integration of IP cores into partially reconfigurable SoC platforms, departing from a high-level of abstraction. The approach is based in a Model-Driven Engineering (MDE) methodology, which exploits two widely used standards for Systems-on-Chip specification, MARTE and IP-XACT. The presented work deals with the deployment level of the MDE approach, in which the abstract components of the platform are first linked to the lower level IP-XACT counterparts. At this phase, information for parameterization and integration is readily available, and a synthesizable model can be obtained from the gener…
High-Power Multicarrier Generation for RF Breakdown Testing
2017
Testing of satellite components for high RF power breakdown effects, such as multipactor and corona or passive-intermodulation, is a topic of growing interest in the aerospaceindustry. Switching fromthe classical single carrier approach to the more realisticmulticarrier scenario is very challenging from the experimental point of view. Themulticarrier signals, amplifiedby several RF power amplifiers, need to have controlled phase, amplitude, and frequency in each carrier. Fine tuning of the signal generator phases is required in order to compensate the phase drift occurring in the active elements of the test bed. This paper presents an efficient and low-cost technique to generate multicarrie…
A fully-digital realtime SoC FPGA based phase noise analyzer with cross-correlation
2017
We report on a fully-digital and realtime operation of a phase noise analyzer using modern digital techniques with cross-correlation. With the advent of system on chip field-programmable gate arrays (SoC FPGAs) embedding hard core central processing unit, coprocessor and FPGA onto a single integrated circuit, the building of sensitive analysis devices for Time & Frequency research is made accessible at virtually no cost and benefits from reconfigurability. Used with high-speed digitizers we have successfully implemented a four-channel system whose preliminary results at 10 MHz shows a residual white noise floor < −185 dBrad2/Hz up to 5 MHz off the carrier, and flicker < −127 dBrad2/Hz using…
Computational volumetric reconstruction of integral imaging with improved depth resolution considering continuously non-uniform shifting pixels
2018
Abstract In this paper, we propose a new computational volumetric reconstruction technique of three-dimensional (3D) integral imaging for depth resolution enhancement by using non-uniform and integer-valued shifting pixels. In a typical integral imaging system, 3D images can be recorded and visualized using a lenslet array. In previous studies, many computational reconstruction techniques such as computational volumetric reconstruction and pixel of elemental images rearrangement technique (PERT) have been reported. However, a computational volumetric reconstruction technique has low visual quality and depth resolution because low-resolution elemental images and uniformly distributed shiftin…
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.