Search results for "absorption."
showing 10 items of 2682 documents
Formation of optically active oxygen deficient centers in Ge-doped SiO2 by γ- and β-ray irradiation
2010
Abstract We report an experimental study on the comparison between the γ- or β-ray induced Ge related point defects in Ge-doped silica. Silica samples doped with ∼2.2 1017 Ge atoms/cm3 produced with the sol–gel technique have been irradiated with γ-ray or with β-ray. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E’Ge, GLPC (Germanium lone pair center) and H(II) point defects. No relevant differences between the concentrations of γ- or β-ray induced Ge(1) and E’Ge point defects have been observed and, in addition, it ha…
Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology
2007
A comparison study of as-deposited by the hydrogen-free SPCVD process silicon dioxide with and without fluorine as well as the one in the form of fused materials is performed to define whether glass forming processing affects its optical properties. Raman scattering, optical absorption in the vacuum ultraviolet region as well as luminescence at different temperatures and various excitation conditions are measured. A difference in Urbach rule parameters and intrinsic defect concentrations for different samples is revealed. No significant impact on the structure responsible for Raman scattering is observed.
Controlling the oxidation processes of Zn nanoparticles produced by pulsed laser ablation in aqueous solution
2016
We used online UV-VIS optical absorption and photoluminescence spectra, acquired during and after pulsed laser ablation of a Zinc plate in aqueous solution, to investigate the effect of the laser repetition rate and liquid environment on the oxidation processes of the produced nanoparticles. A transient Zn/ZnO core-shell structure was revealed by the coexistence of an absorption peak around 5.0 eV due to Zn surface plasmon resonance and of an edge at 3.4 eV coming from wurtzite ZnO. The growth kinetics of ZnO at the various repetition rates, selectively probed by the excitonic emission at 3.3 eV, began immediately at the onset of laser ablation and was largely independent of the repetition …
The landscape of the excitation profiles of the αE and β emission bands in silica
1999
Abstract We report data about the relevance of the conformational heterogeneity in determining the optical properties of oxygen deficiency point defects in natural silica samples. The spectral profiles of the photoluminescence emissions at about 4.2 eV (α E band) and at about 3.15 eV (β band), and the efficiency of the intersystem-crossing mechanism connecting them appear modified by a fine tuning of the excitation energy within the B 2β absorption band. Moreover, the relative excitation optically spectra indicate the presence of optically distinguishable contributions to the emission profile. The reported data are attributed to a distribution of centers that maps into a spectral inhomogene…
The origin of the intrinsic 1.9 eV luminescence band in glassy SiO2
1994
Abstract The current controversy over the nature of the centers giving rise to the 1.9 eV photoluminescence (PL) band (the R-band), the suggested defect models and the relevant experimental data are briefly reviewed. The luminescence emission, excitation and polarization spectra of neutron-irradiated synthetic silica were studied between 6 and 300 K using site-selective dye-laser and Ar ion laser excitation. Resonant zero-phonon lines (ZPL) were observed below 80 K both in luminescence emission and excitation spectra in the 1.9–2.1 eV region. A vibration line in emission spectra 890 cm−1 below the ZPL energy is attributed to the symmetric stretching vibration of the silicon-non-bridging oxy…
Luminescence of fluorine-doped and non-doped silica glass excited with an ArF laser
2004
Abstract The role of fluorine doping on silica has been studied through comparison of the luminescence of fluorine doped and fluorine-free samples made by melting in on SiF4 atmosphere and excited by an ArF laser (6.4 eV) in the temperature range 10–290 K. The fluorine doped sample possesses a very weak absorption band at 7.6 eV on the level of 0.1 cm−1 and there the photoluminescence of so-called oxygen-deficient centers in the blue (2.7 eV) and UV bands (4.4 eV) could be excited. The same luminescence bands are observable in the fluorine-free sample, which contains an absorption band at 7.6 eV on the level of 20 cm−1. In the fluorine-doped sample the UV band prevails over the blue band. T…
Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation.
2007
We report a study of the photoluminescence (PL) time decay of the B-type center, characterized by an optical absorption band peaked at similar to 5.2 eV and two related PL bands peaked at similar to 3.2 eV and similar to 4.3 eV, in sol-gel Ge-doped a- SiO2 under excitation by synchrotron radiation. Measurements were carried out by excitation in UV and in vacuum-UV (VUV), and were performed in the temperature range from 8 K up to 300 K in order to isolate the effects of the intersystem-crossing process, proposed to link the two emission bands of the center. Repeating the time decay measurement at several emission energies falling inside the 4.3 eV band, we have observed a variation of the PL…
Single-molecule spectroscopy of molecular aggregates at low temperature
2004
We have conducted single-molecule spectroscopy of a fluorescent polyphenylene dendrimer consisting of four peripheral perylenemonoimides which serve as energy donors and a central terrylenediimide which is the energy acceptor. After selective excitation of the donors the low-temperature emission spectra of single dendrimers show the purely electronic zero-phonon line as the most prominent feature of the acceptor. These sharp emission lines are subjected to appreciable spectral shifts. Fluorescence excitation spectroscopy of individual dendrimers in the spectral region of the donor absorption allows to extract energy transfer rates for single donors within the dendrimer. Although the energy …
Luminescence and Raman Detection of Molecular Cl2 and ClClO Molecules in Amorphous SiO2 Matrix
2017
The support from the Latvian Research Program project IMIS 2 (L.S., K.S.) and Latvian Science Council Grant 302/2012 (A.S.) is acknowledged. K.K. was partially supported by the Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology. H.H. was supported by the MEXT Element Strategy Initiative to form research cores.
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.