Search results for "absorption."
showing 10 items of 2682 documents
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Defect Luminescence of LiBaF3 Perovskites
2000
Blue and red luminescence of undoped LiBaF3 crystals was studied. A broad, isotropic photoluminescence band centered at 410 nm can be excited by 210 nm — 275 nm light in as grown crystals. After X-irradiation at RT a new narrower, anisotropic luminescence band appears at 425 mn which has an additional excitation band at 290 nm. The X-irradiation also creates the F- type centres and anisotropic centres with an absorption band at 630 nm and a luminescence band at 700 nm. No F- centre luminescence is observed. All the other centres mentioned act as radiative recombination centers as well. It is speculated that the origin of the blue luminescence is due to oxygen defects and that the red lumine…
Oxidation of Zn nanoparticles probed by online optical spectroscopy during nanosecond pulsed laser ablation of a Zn plate in H2O
2015
We report online UV-Visible absorption and photoluminescence measurements carried out during and after pulsed laser ablation of a zinc plate in water, which clarify the events leading to the generation of ZnO nanoparticles. A transient Zn/ZnO core-shell structure is revealed by the coexistence of the resonance absorption peak around 5.0 eV due to Zn surface plasmon resonance and the edge at 3.5 eV of ZnO. The growth kinetics of ZnO, selectively probed by the exciton luminescence at 3.3 eV, begins only after a ∼30 s delay from the onset of laser ablation. We also detect the luminescence at 2.3 eV of ZnO oxygen vacancies, yet rising with an even longer delay (∼100 s). These results show that …
Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
2018
The work was supported by the Institutional Research Funding IUT02-26 of the Estonian Ministry of Education and Research and the project 16-15569S of the Czech Science Foundation.
Level anti-crossing magnetometry with color centers in diamond
2017
Recent developments in magnetic field sensing with negatively charged nitrogen-vacancy centers (NV) in diamond employ magnetic-field (MF) dependent features in the photoluminescence (PL) and eliminate the need for microwaves (MW). Here, we study two approaches towards improving the magnetometric sensitivity using the ground-state level anti-crossing (GSLAC) feature of the NV center at a background MF of 102.4\,mT. Following the first approach, we investigate the feature parameters for precise alignment in a dilute diamond sample; the second approach extends the sensing protocol into absorption via detection of the GSLAC in the diamond transmission of a 1042\,nm laser beam. This leads to an …
The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique
2012
Abstract Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.
Self-absorption in a light-emitting electrochemical cell based on an ionic transition metal complex
2015
We report on the quantitative and qualitative effects of self-absorption in light-emitting electrochemical cells (LECs) based on ionic transition metal complexes (iTMCs), as measured in-situ during electric driving. A yellow-emitting iTMC-LEC comprising an active material thickness of 95 nm suffers a 4% loss of the emission intensity to self-absorption, whereas the same type of device but with a larger active-material thickness of 1 mu m will lose a significant 40% of the light intensity. We also find that the LEC-specific effect of doping-induced self-absorption can result in a drift of the emission spectrum with time for iTMC-LECs, but note that the overall magnitude of doping-induced sel…
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Optical properties of ultrathin Al2O3/ZnO nanolaminates
2015
Abstract Because of their high resistance against ultraviolet and high energy particles, ultrathin amorphous nanolaminates can be very attractive for aerospace application. Here we report on the optical and structural properties of ultrathin Al2O3/ZnO nanolaminates deposited by Atomic Layer Deposition. Structural properties of nanolaminates were studied by GIXRD and AFM. Optical characterization was performed by transmittance, spectroscopic ellipsometry and photoluminescence (PL) spectroscopy. Regression analysis of ellipsometric spectra has shown that absorption peak decreases and blue shifted with the decrease of bilayer thickness in the stack. On the basis of the analysis of structural a…
γ-ray-induced bleaching in silica: Conversion from optical to paramagnetic defects
2000
We report experimental results on optical and ESR measurements performed in $\ensuremath{\gamma}$-irradiated natural silica samples having different content of OH groups. A partial bleaching of the optical absorption band ${B}_{2\ensuremath{\beta}}$ at 5.15 eV and the related photoluminescence emissions at 3.1 eV and 4.2 eV is observed together with the growth of an ESR doublet split by 11.8 mT. The kinetics of the two processes as a function of the $\ensuremath{\gamma}$ dose are correlated and depend on the OH content. Our experiments indicate the occurrence of a $\ensuremath{\gamma}$-ray-induced conversion, from optically active centers to paramagnetic ones and vice versa, changing the re…