Search results for "activation"
showing 10 items of 2079 documents
Mehāniskās aktivācijas ietekme uz nātrija bismuta titanāta keramikas izgatavošanu.
2022
“Mehāniskās aktivācijas ietekme uz nātrija bismuta titanāta keramikas izgatavošanu” Atvars A., zinātniskie darba vadītāji vadošā pētniece Dr. phys. Dunce M. un asoc. prof. Dr. chem. Vaivars G. Bakalaura darbs. (46 lapas, 27 attēli, 49 literatūras avoti, 3 pielikumi). Latviešu valodā Bakalaura darba ietvaros tika veikta nātrija bismuta titanāta (Na0,5Bi0,5TiO3) un cietā šķīduma 0,975(0,94Na0,5Bi0,5TiO3-0,06BaTiO3)-0,025LiNbO3 iegūšana, izmantojot cietfāžu reakcijas metodi, veicot mehānisko aktivāciju vienā no posmiem. Nepieciešamie savienojumi tika iegūti, izmantojot nātrija karbonātu (Na¬2CO3), bismuta (III) oksīdu (Bi2O3), titāna dioksīdu (TiO2), litija karbonātu (Li2CO3), niobija (V) oksī…
Plastic yielding of glass in high-pressure torsion apparatus
2018
International audience; Hardness measurements performed at room temperature have demonstrated that glass can flow under elevated pressure, whereas the effect of high pressure on glass rheology remains poorly quantified. Here, we applied a high-pressure torsion (HPT) apparatus to deform SCHOTT SF6 â glass and attempted to quantify the effect of pressure and temperature on the shear deformation of glass subjected to pressures from 0.3 GPa to 7 GPa and temperatures from 25 ℃ to 496 ℃. Results show that the plastic yield deformation was occurring during the HPT experiments on the SF6 glass at elevated temperature from 350 ℃ to 496 ℃. The yield stress of SF6 glass decreases with increasing tempe…
Improve the dielectric properties of PrSrNi0.8Mn0.2O4 compounds by longer mechanical milling
2018
Abstract Structural and dielectric properties of PrSrNi 0.8 Mn 0.2 O 4 ceramics elaborated by a rapid method combining mechanical milling and heat treatment were studied for the first time. The raw materials are milled at different times ( t mil = 0, 5, 10, 20 and 30 h) and annealed at 1300 °C for 8 h to produce a revealed PrSrNi 0.8 Mn 0.2 O 4 single phase, exhibiting tetragonal structure with space group I 4/ mmm . This result was confirmed by using the TEM/ED pattern for sample milled at 30 h using the [001] orientation. The corresponding lattice images show a well-ordered compound, indicating the absence of stacking faults and the growth of the crystallites. Giant dielectric response …
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
2019
Abstract The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed.
Aqueous Corrosion of the GeSe4 Chalcogenide Glass: Surface Properties and Corrosion Mechanism
2009
International audience; The aqueous corrosion behavior of the GeSe4 glass composition has been studied over time under various conditions (temperature and pH). The evolution of the surface topography by atomic force microscopy and properties such as surface hardness and reduced modulus, as well as the optical transmission in the 1-16 μm window, have been measured as a function of time spent in the corrosive solution. It was found that even if the glass reacts at room temperature, its optical transparency was barely affected. Nevertheless, the durability of GeSe4 was found to be drastically affected by an increase of both temperature and pH. Furthermore, pure selenium nanoparticles were form…
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
2017
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…
Unravelling the kinetics and molecular mechanism of the degenerate Cope rearrangement of bullvalene
2020
The kinetics and molecular mechanism of the gas phase degenerate Cope rearrangement (DCR) of bullvalene have been investigated by applying quantum mechanical calculations. Highly accurate energies (CBS-QB3 and CBS-APNO) and RRKM calculations were employed to study the kinetics and ‘fall-off’ behavior. It was found that the DCR of bullvalene (C3v) occurs through a bishomoaromatic transition structure (C2v) with an energy barrier of ∼49 kJ mol−1. The calculated activation energy and enthalpy were in good agreement with the available values in the literature, but lower than those of common Cope rearrangement; this result is related to the high stabilization energy due to the interaction of the…
Elucidating the Influence of the Activation Energy on Reaction Rates by Simulations Based on a Simple Particle Model
2020
An application for visualizing the dynamic properties of an equimolar binary mixture of isotropic reactive particles is presented. By introducing a user selectable choice for the activation energy, the application is useful to demonstrate qualitatively that the reaction rate depends on the above choice and on temperature. The application is based on a 2D realistic dynamic model where atoms move because of their thermal energies and the trajectories are determined by solving numerically Newton’s laws according to a Molecular Dynamics (MD) scheme. Collisions are monitored as time progresses, and every time the collision energy is larger than the selected activation energy, a reactive event oc…