Search results for "atomic"

Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

2012

Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…

Atomic Layer Deposition of Osmium

2011

Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…

The effect of cavity tuning on oxygen beam currents of an A-ECR type 14 GHz electron cyclotron resonance ion source.

2016

The efficiency of the microwave-plasma coupling plays a significant role in the production of highly charged ion beams with electron cyclotron resonance ion sources (ECRISs). The coupling properties are affected by the mechanical design of the ion source plasma chamber and microwave launching system, as well as damping of the microwave electric field by the plasma. Several experiments attempting to optimize the microwave-plasma coupling characteristics by fine-tuning the frequency of the injected microwaves have been conducted with varying degrees of success. The inherent difficulty in interpretation of the frequency tuning results is that the effects of microwave coupling system and the ca…

Kinetic instabilities in pulsed operation mode of a 14 GHz electron cyclotron resonance ion source

2016

The occurrence of kinetic plasma instabilities is studied in pulsed operation mode of a 14 GHz Aelectron cyclotron resonance type electron cyclotron resonance ion source. It is shown that the temporal delay between the plasma breakdown and the appearance of the instabilities is on the order of 10- 100 ms. The most important parameters affecting the delay are magnetic field strength and neutral gas pressure. It is demonstrated that kinetic instabilities limit the high charge state ion beam production in the unstable operating regime. peerReviewed

Photoelectron Emission from Metal Surfaces Induced by Radiation Emitted by a 14 GHz Electron Cyclotron Resonance Ion Source

2015

Photoelectron emission measurements have been performed using a room-temperature 14 GHz ECR ion source. It is shown that the photoelectron emission from Al, Cu, and stainless steel (SAE 304) surfaces, which are common plasma chamber materials, is predominantly caused by radiation emitted from plasma with energies between 8 eV and 1 keV. Characteristic X-ray emission and bremsstrahlung from plasma have a negligible contribution to the photoelectron emission. It is estimated from the measured data that the maximum conceivable photoelectron flux from plasma chamber walls is on the order of 10% of the estimated total electron losses from the plasma. peerReviewed

New progress of high current gasdynamic ion source (invited).

2016

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller’s ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 1013 cm−3 ) …

Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors

2013

Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…

2020

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of nonequilibrium electronic processes, transient states in chemical reactions, or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical, and structural analyses requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that c…

Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry

2006

The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…

Charge breeding time investigations of electron cyclotron resonance charge breeders

2018

To qualify electron cyclotron resonance charge breeders, the method that is traditionally used to evaluate the charge breeding time consists in generating a rising edge of the injected beam current and measuring the time in which the extracted multicharged ion beam reaches 90% of its final current. It is demonstrated in the present paper that charge breeding times can be more accurately measured by injecting short pulses of 1 + ions and recording the time resolved responses of N + ions. This method is used to probe the effect of the 1 + ion accumulation in the plasma known to disturb the buffer gas plasma equilibrium and is a step further in understanding the large discrepancies reported in…