Search results for "backscattering"
showing 10 items of 42 documents
High quality epitaxial Mn 2 Au (001) thin films grown by molecular beam epitaxy
2020
The recently discovered phenomenon of Neel spin–orbit torque in antiferromagnetic Mn2Au [Bodnar et al., Nat. Commun. 9, 348 (2018); Meinert et al., Phys. Rev. Appl. 9, 064040 (2018); Bodnar et al., Phys. Rev. B 99, 140409(R) (2019)] has generated huge interest in this material for spintronics applications. In this paper, we report the preparation and characterization of high quality Mn2Au thin films by molecular beam epitaxy and compare them with magnetron sputtered samples. The films were characterized for their structural and morphological properties using reflective high-energy electron diffraction, x-ray diffraction, x-ray reflectometry, atomic force microscopy, and temperature dependen…
Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry
2000
A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…
One-sided atomic deflection in the optical Stern-Gerlach effect and coherent trapping
2002
In the optical Stern-Gerlach effect, the interaction of a traveling two-level atom with the electromagnetic field of an optical cavity causes a splitting of the atomic trajectory. One may ask if it is possible to single out particular initial configurations of the system that will lead to selective scattering, in which the atoms follow only one trajectory. We show that these configurations consist of a coherent superposition of the atomic internal states, and of a field phase state or a field coherent state, with a precise phase relation between the two subsystems: The same configurations which produce the so-called atomic coherent trapping in the Jaynes-Cummings model.
Elastic Recoil Detection Analysis
2008
In 1976, a Canadian group described in detail for the first time a new ion beam analytical method based on the elastic recoil of target nuclei collided with high-energy heavy incident ions. In this case, 25–40-MeV 35Cl impinged on a multilayer C or Cu (backing)/LiF or LiOH/Cu (30–150 nm)/LiF or LiOH and H, Li, O, and F recoiled atoms were detected. These exemplified the main characteristics of elastic recoil detection analysis (ERDA): its sensitivity to depth distribution and its ability to detect light elements in heavy substrates. In 1979, the use of megaelectronvolt energy 4He beams permitted the use of ERDA to be extended to depth profiling of hydrogen isotopes in the near-surface regio…
Hydrogen influence on the structure and properties of amorphous hydrogenated carbon films deposited by direct ion beam
2008
Abstract The present work provides results for amorphous hydrogenated carbon (a-C:H) films grown by direct ion beam deposition method. Acetylene and its mixtures with hydrogen were used. The films were characterized by Rutherford backscattering spectrometry, elastic recoil detection, Raman spectroscopy, ellipsometry, infrared spectroscopy, and microhardness measurements. These techniques indicated that an admixture of hydrogen yields a lower deposition rate, a higher content of total and bounded hydrogen in the a-C:H films, and a lower film density. The optical and mechanical properties depend on both, hydrogen concentrations in the gas phase and in the films, and show a strong diamond-like…
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…
Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire
1997
Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…
Luminescence and structural properties of defects in ion implanted ZnO
2006
ZnO substrates and films were intentionally implanted with rare earth and transition metal ions. The influence of the implantation and subsequent air thermal annealing treatments on the structural and optical properties of ZnO samples were studied by using Rutherford backscattering spectrometry and low temperature photoluminescence techniques. Intraionic Tm-related emission was observed for bulk and ZnO films. Similarly, Eu and Tb-doped ZnO films follow the same trend observed in bulk samples. No intraionic related emission was observed for Eu-doped samples even being the ion in Zn sites and for the Tb-doped samples ion segregation was observed for thermal annealing temperatures above 800 °…
Effects of heat treatments on the properties of copper phthalocyanine films deposited by glow-discharge-induced sublimation
2006
Copper phthalocyanine films have been deposited by glow-discharge-induced sublimation. The films have undergone postdeposition heat treatments in air at 250 and 290 °C for different times, ranging from 30 min to 14 h. The properties of as-deposited and heated films have been investigated by different techniques in order to determine the effects of heat treatments on the film properties. Fourier transform infrared analysis and UV−visible optical absorption analysis point out a gradual evolution of the film structure from a mixture of α and β polymorphs to the only β polymorph in the sample heated at 290 °C for 14 h. A pronounced decrease of carbon and nitrogen atomic percentages against an o…
Highly textured Gd2Zr2O7 films grown on textured Ni-5at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dep…
2012
Abstract Growth, texture evolution and microstructure dependency of solution derived Gd 2 Zr 2 O 7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture and morphology are investigated in details. It is found that a rotated cube-on-cube epitaxy of Gd 2 Zr 2 O 7 //NiW in-plane texture forms as soon as the (004) out-plane texture appears, implying that epitaxial growth dominates the crystallization processes. Thermal energy plays an important role in minimizing the difference of interfacial energy along two directions in the anisotropic…