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showing 10 items of 7176 documents
Il brand fra classico e barocco
2009
E, Janet e Brad?
2008
Nell'articolo, si presenta una riflessione storica sulla "personalizzazione" nelle scienze sociali..
Charged jet cross sections and properties in proton-proton collisions at $\sqrt{s}=7$ TeV
2015
The differential charged jet cross sections, jet fragmentation distributions, and jet shapes are measured in minimum bias proton-proton collisions at centre-of-mass energy $\sqrt{s}=7$ TeV using the ALICE detector at the LHC. Jets are reconstructed from charged particle momenta in the mid-rapidity region using the sequential recombination $k_{\rm T}$ and anti-$k_{\rm T}$ as well as the SISCone jet finding algorithms with several resolution parameters in the range $R=0.2$ to $0.6$. Differential jet production cross sections measured with the three jet finders are in agreement in the transverse momentum ($p_{\rm T}$) interval $20<p_{\rm T}^{\rm jet,ch}<100$ GeV/$c$. They are also consistent w…
Lo sbarco alleato tra storia e memoria
2015
il saggio analizza la memoria pubblica e privata della società siciliana intorno allo sbarco alleato del 1943
Il prospetto e il fianco della chiesa di Santa Maria la Croce a Regalbuto
2022
Today’s appearance of the church of Maria Santissima la Croce in Regalbuto is the result of interventions carried out during the last 300 years. The 19th century’s plaster decorations of the interiors hide the original structure of the 16th-century church. One of the “antiquities remainings” survived on the red carved stone arch upon the main apse. The study reveals that the model of the façade, completed in 1774, is the arch of Triumph for Porta dei Greci in Palermo, designed in 1735 by Nicolò Palma and known today thanks to an engraving by Antonino Bova. A document in the archive of the church of San Basilio demonstrates the process of the side façade design, which required reinforcement …
Bartonella henselae, a widespread, silent infectious agent: serum antibodies prevalente in Western Sicily.
2011
"Postfit yields Y(4S)" of "Search for $B^{+}\to K^{+}\nu\bar{\nu}$ decays using an inclusive tagging method at Belle II"
2022
Yields in on-resonance data and as predicted by the simultaneous fit to the on- and off-resonance data, corresponding to an integrated luminosity of 63 and 9 fb$^{−1}$, respectively. The predicted yields are shown individually for charged and neutral B-meson decays and the five continuum background categories. The leftmost three bins belong to the first control region (CR1) with BDT$_{2} \in [0.93; 0.95]$ and the other nine bins correspond to the signal region (SR), three for each range of BDT$_{2} \in [0.95; 0.97; 0.99; 1.0]$. Each set of three bins is defined by $p_{T}(K^{+}) \in [0.5; 2.0; 2.4; 3.5] \rm{GeV}/c^{2}$.
"Postfit yields off-resonance" of "Search for $B^{+}\to K^{+}\nu\bar{\nu}$ decays using an inclusive tagging method at Belle II"
2022
Yields in off-resonance data and as predicted by the simultaneous fit to the on- and off-resonance data, corresponding to an integrated luminosity of 63 and 9 fb$^{−1}$, respectively. The predicted yields are shown individually for the five continuum background categories. The leftmost three bins belong to the third control region (CR3) with BDT$_{2} \in [0.93; 0.95]$ and the other nine bins correspond to the second control region (CR2), three for each range of BDT$_{2} \in [0.95; 0.97; 0.99; 1.0]$. Each set of three bins is defined by $p_{T}(K^{+}) \in [0.5; 2.0; 2.4; 3.5] \rm{GeV}/c^{2}$.
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2018
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …