Search results for "block"

showing 10 items of 1177 documents

Active Translucent Envelopes in Warm and Hot Areas – An innovative multifunctional, dry-assembled components for BIPV

2014

International directives that regulates buildings energy efficiency and environmental sustainability establish strict parameters for the construction of a new generation of “Zero Energy Buildings” indicating transmittance limits for building envelope components and encouraging the use of renewable sources. In this sense, the PV sector aims at the definition of novel efficient solutions for the integration in the building envelope, standing out for their multifunctional features. After an overview on the main PV technologies and building integrated applications, focusing on semi-transparent envelope solutions, the paper shows the results of a research carried out at the Department of Archite…

Materials scienceSettore ICAR/10 - Architettura TecnicaBuilding-integrated photovoltaicsBuilding Envelope DSC Glassblock BIPV Energy efficiencyEngineering physics2nd Annual International Conference on Architecture and Civil Engineering (ACE 2014)
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Silicon Single Electron Transistors with Single and Multi Dot Characteristics

2000

AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics o…

Materials scienceSiliconbusiness.industryTransistorCoulomb blockadechemistry.chemical_elementSilicon on insulatorSubstrate (electronics)Condensed Matter::Mesoscopic Systems and Quantum Hall EffectNoise (electronics)law.inventionchemistrylawOptoelectronicsbusinessAND gateVoltageMRS Proceedings
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Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

2001

Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

Materials scienceSiliconbusiness.industryTransistorDopingGeneral EngineeringGeneral Physics and AstronomySilicon on insulatorCoulomb blockadechemistry.chemical_elementNanotechnologySubstrate (electronics)Hardware_PERFORMANCEANDRELIABILITYGate voltagelaw.inventionchemistryModulationlawHardware_INTEGRATEDCIRCUITSOptoelectronicsbusinessHardware_LOGICDESIGNJapanese Journal of Applied Physics
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Crystallinity of block copolymer controlled by cyclodextrin

2018

We report a differential scanning calorimetry study to investigate the effect of cyclodextrins (CD) on the crystallinity of a copolymer. Tetronics was selected as copolymer with star-like shape formed by four polyethylene oxide flanked by four polypropylene oxide blocks linked to ethylenediamine central group. The use of CD with different cavity size was exploited for a block selective inclusion. A model for supramolecular association was considered for a quantitative description of the enthalpy data. The polymer chain incorporation into the CD cavity generates a loss of crystallinity. The stoichiometry of the CD/copolymer aggregates can be tuned by changing the CD cavity size. The investig…

Materials scienceTetronicSupramolecular chemistryOxideSupramolecular chemistry Crystallinitie02 engineering and technology010402 general chemistry01 natural sciencesPolypropylene oxidePolymer chainDSCchemistry.chemical_compoundCrystallinityDifferential scanning calorimetryCopolymerDifferential scanning calorimetryCopolymerCyclodextrinSupramolecular associationSupramolecular structurePhysical and Theoretical ChemistrySelective inclusionSettore CHIM/02 - Chimica FisicaPolypropylenechemistry.chemical_classificationTetronic Block copolymerCyclodextrinEthylene diaminePolymer021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical scienceschemistryChemical engineeringCavity resonatorQuantitative descriptionsense organsPolyethylene oxide0210 nano-technologyPolypropylene
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Design and operation of CMOS-compatible electron pumps fabricated with optical lithography

2017

We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…

Materials science[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsNanowireSilicon on insulatorPhysics::OpticsFOS: Physical sciences02 engineering and technology7. Clean energy01 natural sciencesCapacitancelaw.inventionOptical pumpingCondensed Matter::Materials Sciencelaw0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Electrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]010306 general physicsLithographyComputingMilieux_MISCELLANEOUSCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryCoulomb blockade021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectElectronic Optical and Magnetic MaterialsComputer Science::OtherCMOSOptoelectronicsPhotolithography0210 nano-technologybusiness[PHYS.COND] Physics [physics]/Condensed Matter [cond-mat]
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Numerical Procedure For Residual Stresses Prediction In Friction Stir Welding

2011

The prediction of residual stresses is a relevant and, under many points of view, still open issue for a proper welding process design. In the present paper a 3D FE model, with general validity for different joint configurations, was used to simulate the Friction Stir Welding (FSW) process of butt joints through a single block approach. The model is able to predict the residual stresses by considering thermal actions only, thanks to a new time efficient approach. A good agreement between calculated and experimentally measured data was found; the effectiveness of the presented numerical procedure was evaluated by comparing the calculation times of the proposed method with the ones of already…

Materials sciencebusiness.industryFriction stirweldingresidual stressesFEMApplied MathematicsMetallurgyGeneral EngineeringProcess (computing)Structural engineeringComputer Graphics and Computer-Aided DesignFinite element methodResidual stressThermalButt jointFriction stir weldingbusinessJoint (geology)Settore ING-IND/16 - Tecnologie E Sistemi Di LavorazioneAnalysisBlock (data storage)
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Solution processed organic light-emitting diodes using a triazatruxene crosslinkable hole transporting material.

2018

A cross-linkable triazatruxene that leads to insoluble films upon thermal annealing at temperatures compatible with flexible substrates is presented. The films were used as the hole transporting and electron blocking layer in partially solution processed phosphorescent organic light-emitting diodes, reaching power conversion efficiencies of 24 lm W−1, an almost 50% improvement compared to the same OLEDs without the cross-linkable hole transporting layer.

Materials sciencebusiness.industryGeneral Chemical Engineering02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesElectron blocking layerTriazatruxene0104 chemical sciencesSolution processedOLEDOptoelectronics0210 nano-technologyPhosphorescencebusinessLayer (electronics)DiodeRSC advances
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Noise and Microwave Properties of Set-Transistors

2002

Electron tunneling through a small tunnel junction with capacitance C 0 is suppressed by the so-called Coulomb blockade if the charging energy E c = e 2/2C∑ is larger than the thermal energy k B T 1. This effect is observed in a single electron tunneling transistor (SETT), which is a nano-meter size three-terminal device in which two leads connect to a small metallic island through two tunnel junctions. The excess charge on the island is regulated by the potential of the capacitively coupled gate electrode. The SETT is a very sensitive electrometer, noise levels of 10−5e/√Hz have been reached.2,3 A similar device, the electron pump, is made by connecting two or more islands in series throug…

Materials sciencebusiness.industryTransistorCoulomb blockadeElectronElectrometerCapacitancelaw.inventionlawTunnel junctionOptoelectronicsbusinessNoise (radio)Quantum tunnelling
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Carbon Nanotube Radio-Frequency Single-Electron Transistor

2004

We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.

Materials sciencebusiness.industryTransistorCoulomb blockadeNanotechnologyCharge (physics)Carbon nanotubeCondensed Matter PhysicsNoise (electronics)Atomic and Molecular Physics and Opticslaw.inventionCarbon nanotube field-effect transistorlawPlasma-enhanced chemical vapor depositionOptoelectronicsGeneral Materials ScienceRadio frequencybusinessJournal of Low Temperature Physics
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Multicell power allocation method based on game theory for inter-cell interference coordination

2009

As a new technology, coordinated multipoint (CoMP) transmission is included in LTE-Advanced study item. Moreover, the network architecture in LTE-Advanced system is modified to take into account coordinated transmission. Under this background, a novel power allocation game model is established to mitigate inter-cell interference with cellular coordination. In the light of cellular cooperation relationship and centralized control in eNodeB, the power allocation in each served antenna unit aims to make signal to interference plus noise ratio (SINR) balanced among inter-cells. Through the proposed power allocation game algorithm, the users' SINR can reach the Nash equilibrium, making it feasib…

Mathematical optimizationGeneral Computer ScienceComputer scienceComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKSSignal-to-interference-plus-noise ratioThroughputInterference (wave propagation)Blocking (statistics)Telecomunicaciósymbols.namesakeEnodeBTransmission (telecommunications)Nash equilibriumsymbolsGame theoryComunicació i tecnologiaSimulation
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