Search results for "chemical vapor deposition"
showing 10 items of 199 documents
Electrochemical Investigation of Lithium Intercalation in MOCVD Derived Nanostructured Anatase/Rutile TiO2
2011
In this paper we report on the lithium reversible storage in titanium dioxide (TiO2) prepared by metal-organic chemical vapor deposition (MOCVD). Electrochemical properties in terms of lithium reversible insertion depend on the deposited microstructure. For thick films deposited on silicon wafer electrochemical activity of the anatase type of TiO2 is registered in the potential range 1.8-2.1 V vs. Li. For thinner films the intercalation reaction takes place in two potential ranges: 1.8-2.1 V vs. Li and below 1.4 V vs. Li. The second electroactivity range is attributed to lithium insertion into rutile. We found that the decrease of the lower potential limit (0.5 V instead of commonly used 1 …
Lateral Fusion of Chemical Vapor Deposited N = 5 Armchair Graphene Nanoribbons
2017
Bottom-up synthesis of low-bandgap graphene nanoribbons with various widths is of great importance for their applications in electronic and optoelectronic devices. Here we demonstrate a synthesis of N = 5 armchair graphene nanoribbons (5-AGNRs) and their lateral fusion into wider AGNRs, by a chemical vapor deposition method. The efficient formation of 10- and 15- AGNRs is revealed by a combination of different spectroscopic methods, including Raman and UV−visnear-infrared spectroscopy as well as by scanning tunneling microscopy. The degree of fusion and thus the optical and electronic properties of the resulting GNRs can be controlled by the annealing temperature, providing GNR films with o…
Gold based plasmonic stripes co-integrated with low loss Si3N4 platform in aqueous environment
2018
We demonstrate a butt-coupled interface between LPCVD Si 3 N 4 and gold based plasmonic waveguides in aqueous environment, exhibiting 2.3dB coupling loss and 75μm propagation length at 1550nm, towards future employment in biosensing applications.
Confident methods for the evaluation of the hydrogen content in nanoporous carbon microfibers
2012
Abstract Nanoporous carbon microfibers were grown by chemical vapor deposition in the vapor-liquid solid mode using different fluid hydrocarbons as precursors in different proportions. The as-grown samples were further treated in argon and hydrogen atmospheres at different pressure conditions and annealed at several temperatures in order to deduce the best conditions for the incorporation and re-incorporation of hydrogen into the microfibers through the nanopores. Since there are some discrepancies in the results on the hydrogen content obtained under vacuum conditions, in this work, we have measured the hydrogen content in the microfibers using several analytical methods in ambient conditi…
Chemical Vapor Deposition Synthesis and Terahertz Photoconductivity of Low-Band-Gap N = 9 Armchair Graphene Nanoribbons.
2017
Recent advances in bottom-up synthesis of atomically defined graphene nanoribbons (GNRs) with various microstructures and properties have demonstrated their promise in electronic and optoelectronic devices. Here we synthesized N = 9 armchair graphene nanoribbons (9-AGNRs) with a low optical band gap of ∼1.0 eV and extended absorption into the infrared range by an efficient chemical vapor deposition process. Time-resolved terahertz spectroscopy was employed to characterize the photoconductivity in 9-AGNRs and revealed their high intrinsic charge-carrier mobility of approximately 350 cm2·V-1·s-1.
Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell
2004
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.
Platinum-doped CeO2 thin film catalysts prepared by magnetron sputtering.
2010
The interaction of Pt with CeO(2) layers was investigated by using photoelectron spectroscopy. The 30 nm thick Pt doped CeO(2) layers were deposited simultaneously by rf-magnetron sputtering on a Si(001) substrate, multiwall carbon nanotubes (CNTs) supported by a carbon diffusion layer of a polymer membrane fuel cell and on CNTs grown on the silicon wafer by the CVD technique. The synchrotron radiation X-ray photoelectron spectra showed the formation of cerium oxide with completely ionized Pt(2+,4+) species, and with the Pt(2+)/Pt(4+) ratio strongly dependent on the substrate. The TEM and XRD study showed the Pt(2+)/Pt(4+) ratio is dependent on the film structure.
MOCVD growth of porous cerium oxide thin films on silicon substrate
2015
Abstract Porous cerium oxide thin films were grown by pulsed direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) on silicon substrate, using cerium tetrakis (1-methoxy-2-methyl-2-propanolate) dissolved in cyclohexane as precursor as well as oxygen as oxidant agent. The chemical and morphological characteristics of the films were investigated by XPS, SEM and TEM. The influence of the growth conditions on the morphological features of the thin films and the cerium chemical states are reported and discussed. The decrease of the oxygen and/or alkoxide flow rate induces the decrease of both the film thickness and the porosity of the layer. Moreover, the growth of silicate…
Numerical study of the ZnO growth by MOCVD
2004
Abstract In order to analyze the growth of zinc oxide by metalorganic chemical vapor deposition, a numerical model has been developed to simulate the gas flow in a horizontal reactor. A two-inlet system, one for the Zn precursor and the other for the oxygen one, has been studied in the framework of this numerical simulation. This model takes into account the momentum conservation equation coupled with the heat transfer and mass transport of chemical species. Different Zn precursors, DiethylZinc (DEZn), DimethylZinc (DMZn) and DimethylZinc-TriethylAmine (DMZn-TEA) and oxygen precursors, ( tert -butanol, iso -propanol and acetone) as well as carrier gases (H 2 and N 2 ) have been considered. …
ZnO films grown by MOCVD on GaAs substrates: Effects of a Zn buffer deposition on interface, structural and morphological properties
2009
Abstract Integration of ZnO with the well-developed GaAs technology presents several aspects that need to be previously analyzed and considered. The large lattice mismatch between ZnO and GaAs and its different crystallographic structure lead to many structural defects. In addition, their potential chemical reactivity is another source of complexity and an academic challenge. Recently some interesting contributions on this subject have been carried out by Liu and co-workers. As an additional step to the knowledge of the ZnO/GaAs heterostructure, we have deepened on the study of the morphology and orientation of ZnO thin films grown by atmospheric pressure metal-organic chemical vapour depos…