Search results for "conductivity"
showing 10 items of 1988 documents
Tuning the carrier concentration for thermoelectrical application in the quaternary Heusler compound Co2TiAl(1−x)Six
2010
The family of half-metallic ferromagnets Co2TiZ exhibits exceptional transport properties. The investigated compounds Co2TiAl(1−x)Six (x = 0.25, 0.5, 0.75) show Curie temperatures (TCs) that vary between 250 and 350 K, depending on the composition. Above TC the Seebeck coefficient remains constant. This makes them promising candidates for thermoelectric devices such as thermocouples with a tunable working range. The electrical resistivity data show an anomaly at TC which is attributed to changes in the electronic structure and therefore in the carrier concentration.
Inhibition of the detrimental double vortex-kink formation in thick YBa2Cu3O7films with BaZrO3nanorods
2013
We investigated the temperature (T) variation of the normalized magnetization relaxation rate S and of the corresponding normalized vortex-creep activation energy U* = T/S for YBa2Cu3O7 films containing BaZrO3 nanorods, with the external magnetic field H oriented perpendicular to the film surface. It was found that by increasing the film thickness and using nanodot decorated substrates the high-T S(T) maximum appearing at low H is substituted by a minimum in S(T). As revealed by the analysis of the current density dependence of U*, this behaviour is due to the inhibition of vortex excitations involving double vortex-kinks and superkinks formation in the investigated thick films, owing to th…
Impedance spectroscopy studies of SrMnO3, BaMnO3and Ba0.5Sr0.5MnO3ceramics
2014
The impedance spectrum of hexagonal SrMnO3, rhombohedral BaMnO3 and orthorhombic Ba0.5Sr0.5MnO3 ceramics, synthesized by conventional high-temperature method, was studied in a wide temperature and frequency range. The complex impedance plots of Z″ versus Z′ pointed to two contributions originating from grains and grain boundaries. The parameters of electric equivalent circuit were calculated. The semicircles related to the grain boundary are located at the lower frequency side due to higher resistivity and capacity of the grain boundaries. The Ba0.5Sr0.5MnO3 ceramics is characterized by the lowest activation energy related to the grains. The conductivities σac of all the investigated sample…
Phase separation in the quaternary Heusler compound CoTi(1−x)MnxSb – A reduction in the thermal conductivity for thermoelectric applications
2010
We investigate the phase separation of the solid solution CoTi(1−x)MnxSb into the two Heusler compounds CoTiSb and CoMnSb. Energy-dispersive X-ray spectroscopy measurements on the two-phase material reveal the presence of size- and shape-tunable CoTiSb regions in a CoMnSb matrix. We demonstrate that the formed phase and grain boundaries have a considerable influence on the phonon scattering processes, which leads to a reduction in the thermal conductivity by a factor of three compared to single-phase CoTiSb.
Conductivity of the two-dimensional electron gas atLaAlO3/SrTiO3interface
2017
We propose an analytical theory of metallic conductivity in the two-dimensional (2D) ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ (LAO/STO) interface. For that we consider the electron-phonon interaction at the interface. The electronic part is taken from our previous work [Phys. Chem. Chem. Phys. 18, 2104 (2016)], considering the conditions for the interfacial charge carrier (electron or hole) to become itinerant. The second ingredient deals with the atomic oscillations localized near the interface and decaying rapidly at its both sides, which can be regarded as 2D acoustic phonons. The dispersion of such phonons depends on the characteristics of phonon spectra of LAO and STO. Calculating t…
Ferroelectricity and structure of BaTiO grown on YBa Cu O thin films
2000
We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O \(_{7 - \delta }\) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O \(_{7 - \delta }\) and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indica…
Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface
2016
International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
2015
Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…
Finite range scattering of Ni and Zn impurities in Y-123 thin films
1997
Abstract We investigated YBa 2 (Cu 1− z M z ) 3 O 7-δ (M Ni,Zn) thin films and determined the decrease of T c and the increase of residual resistivity due to Cu-site substitution, taking into account the CuO-chain contributions to the total conductivity. Although Zn suppresses T c stronger than Ni by a factor of 2.3 the increase of resistivity differs only slightly. Furthermore the observed resistivities are too high to be explained within scattering from point-like defects. To reconcile these contradictions, we assumed finite size scattering potentials, which lead to scattering phase shifts δ l of higher angular momebtum l > 0. T c -suppression is discussed qalitatively within this picture.
Reduction of phonon thermal conductivity in nanowires and nanoribbons with dynamically rough surfaces and edges
2009
We present an analytical model and molecular-dynamics simulations of the phonon heat transport in nanowires and nanoribbons with anharmonic lattices and dynamically rough surfaces and edges. In agreement with recent experiments on heat transport in single-crystalline silicon nanowires with rough surfaces, our model and simulations predict finite and length-independent phonon thermal conductivity in such quasi–one-dimensional systems, in contrast to anomalous phonon thermal conductivity of corresponding momentum-conserving systems with atomically smooth surfaces, divergent with the system length. Within our model, the main cause of thermal conductivity reduction is the momentum-nonconserving…